transistor 2955
Abstract: 2955 transistor transistor TIP3055 TIP3055 ft 2955 TIP2955 TIP2955npn TIP2955 NPN power transistor TIP295
Text: TIP3055, 2955 Complementary Power Transistors Complementary Silicon Power Transistors are designed for use in general purpose power amplifier and switching applications. Features: • Power Dissipation-PD = 90W at TC = 25°C. • DC Current Gain hFE = 20 ~ 100 at IC = 4.0A.
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TIP3055,
400mA.
TIP3055
TIP2955
transistor 2955
2955 transistor
transistor TIP3055
TIP3055
ft 2955
TIP2955
TIP2955npn
TIP2955 NPN power transistor
TIP295
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MAX1067
Abstract: MAX1067ACEE MAX1067AEEE MAX1067BCEE MAX1067BEEE MAX1067CCEE MAX1067CEEE MAX1068 MAX1168
Text: 19-2955; Rev 1; 8/07 Multichannel, 14-Bit, 200ksps Analog-to-Digital Converters The MAX1067/MAX1068 low-power, multichannel, 14bit analog-to-digital converters ADCs feature a successive-approximation ADC, integrated +4.096V reference, a reference buffer, an internal oscillator,
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14-Bit,
200ksps
MAX1067/MAX1068
14bit
10ksps
MAX1067/MAX1068
MAX1067
MAX1067ACEE
MAX1067AEEE
MAX1067BCEE
MAX1067BEEE
MAX1067CCEE
MAX1067CEEE
MAX1068
MAX1168
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MAX1067
Abstract: MAX1067ACEE MAX1067AEEE MAX1067BCEE MAX1067BEEE MAX1067CCEE MAX1067CEEE MAX1068 MAX1168
Text: 19-2955; Rev 0; 8/03 Multichannel, 14-Bit, 200ksps Analog-to-Digital Converters The MAX1067/MAX1068 consume only 2.9mA AVDD = DVDD = +5V at 200ksps when using an external reference. AutoShutdown reduces the supply current to 145µA at 10ksps and to less than 10µA at reduced sampling rates.
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14-Bit,
200ksps
MAX1067/MAX1068
10ksps
MAX1067
MAX1068
MAX1068.
16bit-wide
MAX1067ACEE
MAX1067AEEE
MAX1067BCEE
MAX1067BEEE
MAX1067CCEE
MAX1067CEEE
MAX1168
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44H11
Abstract: A 3150 ic 45h11 3055 sot-223 sod923 2955 sot223 IC A 3150 SOT 363 darlington CXT7090L 7120
Text: Bipolar Power Transistors Surface Mount Packages Actual Size SOD-923 SOT-923 SOT-953 SOD-523 SOT-523 SOT-563 SOD-323 SOT-323 SOT-363 SOD-123 SOD-123F SOT-23 SOT-23F SOT-143 SOT-26 SOT-28 SOT-89 SOT-223 SOT-228 SMA SMB SMC SOIC-16 HD DIP TLP Tiny Leadless
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OD-923
OT-923
OT-953
OD-523
OT-523
OT-563
OD-323
OT-323
OT-363
OD-123
44H11
A 3150 ic
45h11
3055 sot-223
sod923
2955 sot223
IC A 3150
SOT 363 darlington
CXT7090L
7120
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Untitled
Abstract: No abstract text available
Text: MJF3055 NPN , MJF2955 (PNP) Complementary Silicon Power Transistors Specifically designed for general purpose amplifier and switching applications. • • • • • • • • • http://onsemi.com Isolated Overmold Package (1500 Volts RMS Min) Electrically Similar to the Popular MJE3055T and MJE2955T
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MJF3055
MJF2955
AN1040.
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221D
Abstract: AN1040 MJE2955T MJE3055T MJF2955 MJF3055
Text: MJF3055 NPN , MJF2955 (PNP) Complementary Silicon Power Transistors Specifically designed for general purpose amplifier and switching applications. • • • • • • • • • http://onsemi.com Isolated Overmold Package (1500 Volts RMS Min) Electrically Similar to the Popular MJE3055T and MJE2955T
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MJF3055
MJF2955
MJE3055T
MJE2955T
E69369,
u8000
MJF3055/D
221D
AN1040
MJE2955T
MJF2955
MJF3055
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isolated dc linear feedback op-amp
Abstract: TL 431 regulator TL 431 of op-amp LM 250 optocoupler as isolated linear opamp 3 phase smps circuit diagram infrared emitters and detectors 431 regulator ISOLATION OPAMP TL431
Text: APPLICATIONS OPTOELECTRONICS Bob Krause ● Frank Möllmer Optoelectronic feedback control for linear and switched-mode power supplies II Thanks to optocouplers, designers of switched-mode power supplies can now implement voltage regulators which do not impair
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Motorola transistors MJE3055
Abstract: Motorola transistors MJE2955 IC TC 3588 MJE2955 power amplifier circuit MJE2955 mje3055 transistor MJE3055 1N5825 MJD2955 30 amp npn transistor
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA NPN M JD 2955 Com plem entary Power Transistors PNP M JD 3055 DPAK For Surface Mount Applications ‘ Motorola Preferred Device Designed for general purpose amplifier and low speed switching applications. • • • •
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MJE2955
MJE3055
1Ol50Â
MJD6036
MJD3039
Motorola transistors MJE3055
Motorola transistors MJE2955
IC TC 3588
MJE2955 power amplifier circuit
mje3055
transistor MJE3055
1N5825
MJD2955
30 amp npn transistor
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transistor mj 3055
Abstract: d2955 transistor Amp 3055 Motorola transistors MJE3055 TO 127 mje3055 127 case data Motorola transistors MJE3055 Motorola transistors MJE2955 transistor 30 j 127 L 3055 motorola mje2955 data
Text: MOTOROLA Order this document by MJ D2955/D SEMICONDUCTOR TECHNICAL DATA PNP M JD 2955 Com plem entary Power Transistors NPN M JD 3055 DPAK For Surface Mount Applications Designed for general purpose amplifier and low speed switching applications. • • •
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D2955/D
MJE2955
MJE3055
transistor mj 3055
d2955
transistor Amp 3055
Motorola transistors MJE3055 TO 127
mje3055 127 case data
Motorola transistors MJE3055
Motorola transistors MJE2955
transistor 30 j 127
L 3055 motorola
mje2955 data
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TIP 2n3055
Abstract: TIP 3055 transistor Amp 3055 of 2n3055 tip 2955 transistor TIP 3055 motorola power transistor 2N3055 M 3055 power transistor 2955 transistor transistor 3055
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA u d ii TIP 3055 Com plem entary Silicon Power Transistors PNP TIP 2955 . . . designed for general-purpose switching and amplifier applications. • • • DC Current Gain — hpg - 2 0 -7 0 @ Iq - 4.0 Adc Collector-Emitter Saturation Voltage — VcE sat " 1 -1 Vc|c (Max) @ Ic = 4.0 Adc
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MTP2955
Abstract: TMOS Power FET diode h5e 221A-06 AN569 MTP3055E Motorola TMOS Power FET P-Channel
Text: b 3 b ? 2 S 4 DO'iflfllb 121 • MOTb M O T O R O L A SC C X S T R S / R F MOTOROLA H SEM ICONDUCTO R TECHNICAL DATA M T P 2955 Designer's Data Sheet Pow er Field Effect Transistor P-Channel Enhancement-Mode Silicon Gate TMOS POWER FET 12 AMPERES RDS on) = 0.3 OHM
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MTP3055E
MTP2955
b3b7254
MTP2955
TMOS Power FET
diode h5e
221A-06
AN569
MTP3055E
Motorola TMOS Power FET P-Channel
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3055t
Abstract: bdw 51 52 SGS TIP 32 mj 3055 npn 2955t B0536 bd 911 mj 2955 npn bd 3055 TIP 3771
Text: Æ J SGS-THOMSON ^ 7# RiiOtglKiiiILKgTORODÊi GENERAL PURPOSE & INDUSTRIAL POWER BIPOLAR EPITAXIAL BASE TRANSISTORS Continued •c v CBO v CEO Package ptot Tyipe NPN PNP hFE Î <C 1 VCE v CEsat ic 1 •b min (A) (V) (V) (W| 3 3 3 3 3 80 80 90 100 115
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2N5190
3055t
bdw 51 52
SGS TIP 32
mj 3055 npn
2955t
B0536
bd 911
mj 2955 npn
bd 3055
TIP 3771
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NJ01
Abstract: No abstract text available
Text: I . . , A L L E GR O M I C R O S Y S T E M S INC T3 D QS0433Ô 0003751 2 • T-9 1-0 1 PROCESS NJ01 Process NJ01 N-Channel Junction Field-Effect Transistor Process NJ01 is an N-channel junction field-effect
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00D37S1
T-91-01
NJ01
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Untitled
Abstract: No abstract text available
Text: TIP2955 TIP3055 COMPLEMENTARY SILICON POWER TRANSISTORS • STMicroelectronics PREFERRED SALESTYPES . COMPLEMENTARY PNP - NPN DEVICES DESCRIPTION The TIP3055 is a silicon Epitaxial-Base Planar NPN transistor mountend in TO-218 plastic package. It is intented for power switching
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TIP2955
TIP3055
TIP3055
O-218
TIP2955.
P2955/TIP3055
O-218
OT-93)
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328A-03
Abstract: No abstract text available
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line Microwave Power Transistors MRW2001 MRW2003 Designed primarily for large-signal output and driver amplifier stages in the 1.0 to 2.3 GHz frequency range. • Designed for Class B or C, Common Base Power Amplifiers
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MRW2001
MRW2003
28A-03,
GP-13)
Emitter-RW2001
328A-03
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IN403
Abstract: No abstract text available
Text: FUNCTION GUIDE TRANSISTORS 2.1.2 lc D-PACK Type Transistors Device Type VcEO Condition Condition VCE satXV Condition TYP MAX V ce (V) lc (A) M M Hz) Pc (A) (V) NPN PNP MIN MAX 0.5 300 KSH 3 4 0 KSH 350 10 0.05 30 240 1 40 KSH29 KSH 3 0 4 1 15 75 1 0.125 0.7
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KSH29
KSH31
KSD1221
KSH44H11
KSH3055
KSH45H
IN403
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TFK S 186 P
Abstract: K 2961 tv 2971 2SC2952 New Transistor Manual
Text: 5 - - FOR U SE BY E L E C T R IC IA N S O V E R S E A S : •M-EiiOSWHE New Transistor Manual lists all the transistors registered with the Electronic Industries Association of Japan (EIAJ), arranged in a manner easy to look up. We hope that you will make full use of the data provided in this manual by referring to the Japanese-English
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470MHz,
TFK S 186 P
K 2961
tv 2971
2SC2952
New Transistor Manual
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40WPK
Abstract: No abstract text available
Text: 12E D I t>3ti725M GQflT'IflG 1 | MOTOROLA SC XSTRS/R F MOTOROLA SEMICONDUCTOR MRF1004MA MRF1004MB MRF1004MC TECHNICAL DATA T h e R F L in e 4.0 W MICROWAVE PULSE POWER TRANSISTORS MICROWAVE POWER TRANSISTORS . . . designed for Class B and C common base amplifier applications
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3ti725M
MRF1004MA
MRF1004MB
MRF1004MC
t3ti72SM
MRF1004MA,
MRF1004MB,
MRF1004MC
40WPK
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3055t
Abstract: 2955T 2n2646 pin N2647 N-055 3055H n055 2N2646 2N4393 RU 6102
Text: AD VA NI O E R L I K O N / SEMICOND 3bE D • ü2blbMñ QOQDQ1S 3 ■ S E L I — r - 2 1 /7 - ö SILICON TRANSISTORS SEMICONDUCTORS g Power transistors TYPE NPN ; PNP PD Tc=25°C W VCBO V 117 117 117 117 75 75 75 115 75 150 150 150 117 25 50 25 50 50 50
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02Llb4Ã
0D00D1S
3055H
3055T
O-220
2955T
-TO-220
800ru
O-105
O-106
2n2646 pin
N2647
N-055
n055
2N2646
2N4393
RU 6102
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JE3055
Abstract: JE2955 current pm ic 3846 3055 npn mt 3055
Text: MOTOROLA SC X STR S /R F IS E D | b3b725>l ODBSSSI 1 | DPAK For Surface Mount Applications PIMP M JD2955 NPN M JD3055 T -3 ¡ Íf MOTOROLA SEMICONDUCTOR TECHNICAL DATA Complem entary Pow er Transistors Designed for general purpose am plifier and low speed switching applications.
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b3b725
JE2955
JE3055
JD2955
JD3055
current pm ic 3846
3055 npn
mt 3055
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KT 819 transistor
Abstract: 2N2222A 338 SF129D SF137D SSY20B KT819W SF127E KFY18 321 KP303W KFY18
Text: Deutsche Post NfD Studiotechnik Fernsehen Bauelemente - Mitteilung Nr. 6 TRANSISTORVERGLEICHSLISTE Herausgebers Halbleitervergleichsgruppe Studiotechnik Fernsehen Deutsche Post Studiotechnik Fernsehen Bauelemente-Mitteilung Nr. 6 Dez. 79 N f D T r a n s i s t o r v e r g l e i c h s l i s t e
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Untitled
Abstract: No abstract text available
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Medium Power Field Effect Transistor P-Channel Enhancement Mode Silicon Gate TMOS E-FET SOT-223 for Surface Mount Motorola Preferred Device TMOS MEDIUM POWER FET 1.2 AMP 60 VOLTS RDS on = 0.3 OHM This advanced E -F E T is a TMOS medium power MOSFET
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OT-223
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C2688
Abstract: c2688 transistor 5257 transistor equivalent transistor TIP2955 br c2688 C-2688 c2688 L L72B tRANSISTOR c2688 TIP2955
Text: TEXAS INSTR {OPTO} 8961726 b5 TEXAS INSTR » F lfiT b lT S b D D 3b 3 62 C 3 6 9 9 8 OPTO TIP2955 P-N-P SILICON POWER TRANSISTOR JAN U ARY 1972 - REVISED OCTOBER 1984 • Designed for Complementary Use with TIP 3055 • 9 0 W at 2 5 ° C C a se Temperature
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TIP2955
TIP3055
t0-218aa
22eoi2
D0370D3
TIP2955
C2688
c2688 transistor
5257 transistor
equivalent transistor TIP2955
br c2688
C-2688
c2688 L
L72B
tRANSISTOR c2688
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4N35-4N36-4N37
Abstract: No abstract text available
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA 4 N 35 4N36 4N 37 6 -P in D IP O p to is o la to rs Transistor Output Th e se d e v ic e s c o n s is t o f a g a lliu m a rse n id e in fra re d e m ittin g d io d e o p tic a lly c o u p le d to a m o n o lith ic s ilic o n p h o to tra n s is to r d e te cto r.
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E54915
4N35-4N36-4N37
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