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    2955 TRANSISTOR Search Results

    2955 TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    2955 TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    transistor 2955

    Abstract: 2955 transistor transistor TIP3055 TIP3055 ft 2955 TIP2955 TIP2955npn TIP2955 NPN power transistor TIP295
    Text: TIP3055, 2955 Complementary Power Transistors Complementary Silicon Power Transistors are designed for use in general purpose power amplifier and switching applications. Features: • Power Dissipation-PD = 90W at TC = 25°C. • DC Current Gain hFE = 20 ~ 100 at IC = 4.0A.


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    PDF TIP3055, 400mA. TIP3055 TIP2955 transistor 2955 2955 transistor transistor TIP3055 TIP3055 ft 2955 TIP2955 TIP2955npn TIP2955 NPN power transistor TIP295

    MAX1067

    Abstract: MAX1067ACEE MAX1067AEEE MAX1067BCEE MAX1067BEEE MAX1067CCEE MAX1067CEEE MAX1068 MAX1168
    Text: 19-2955; Rev 1; 8/07 Multichannel, 14-Bit, 200ksps Analog-to-Digital Converters The MAX1067/MAX1068 low-power, multichannel, 14bit analog-to-digital converters ADCs feature a successive-approximation ADC, integrated +4.096V reference, a reference buffer, an internal oscillator,


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    PDF 14-Bit, 200ksps MAX1067/MAX1068 14bit 10ksps MAX1067/MAX1068 MAX1067 MAX1067ACEE MAX1067AEEE MAX1067BCEE MAX1067BEEE MAX1067CCEE MAX1067CEEE MAX1068 MAX1168

    MAX1067

    Abstract: MAX1067ACEE MAX1067AEEE MAX1067BCEE MAX1067BEEE MAX1067CCEE MAX1067CEEE MAX1068 MAX1168
    Text: 19-2955; Rev 0; 8/03 Multichannel, 14-Bit, 200ksps Analog-to-Digital Converters The MAX1067/MAX1068 consume only 2.9mA AVDD = DVDD = +5V at 200ksps when using an external reference. AutoShutdown reduces the supply current to 145µA at 10ksps and to less than 10µA at reduced sampling rates.


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    PDF 14-Bit, 200ksps MAX1067/MAX1068 10ksps MAX1067 MAX1068 MAX1068. 16bit-wide MAX1067ACEE MAX1067AEEE MAX1067BCEE MAX1067BEEE MAX1067CCEE MAX1067CEEE MAX1168

    44H11

    Abstract: A 3150 ic 45h11 3055 sot-223 sod923 2955 sot223 IC A 3150 SOT 363 darlington CXT7090L 7120
    Text: Bipolar Power Transistors Surface Mount Packages Actual Size SOD-923 SOT-923 SOT-953 SOD-523 SOT-523 SOT-563 SOD-323 SOT-323 SOT-363 SOD-123 SOD-123F SOT-23 SOT-23F SOT-143 SOT-26 SOT-28 SOT-89 SOT-223 SOT-228 SMA SMB SMC SOIC-16 HD DIP TLP Tiny Leadless


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    PDF OD-923 OT-923 OT-953 OD-523 OT-523 OT-563 OD-323 OT-323 OT-363 OD-123 44H11 A 3150 ic 45h11 3055 sot-223 sod923 2955 sot223 IC A 3150 SOT 363 darlington CXT7090L 7120

    Untitled

    Abstract: No abstract text available
    Text: MJF3055 NPN , MJF2955 (PNP) Complementary Silicon Power Transistors Specifically designed for general purpose amplifier and switching applications. • • • • • • • • • http://onsemi.com Isolated Overmold Package (1500 Volts RMS Min) Electrically Similar to the Popular MJE3055T and MJE2955T


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    PDF MJF3055 MJF2955 AN1040.

    221D

    Abstract: AN1040 MJE2955T MJE3055T MJF2955 MJF3055
    Text: MJF3055 NPN , MJF2955 (PNP) Complementary Silicon Power Transistors Specifically designed for general purpose amplifier and switching applications. • • • • • • • • • http://onsemi.com Isolated Overmold Package (1500 Volts RMS Min) Electrically Similar to the Popular MJE3055T and MJE2955T


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    PDF MJF3055 MJF2955 MJE3055T MJE2955T E69369, u8000 MJF3055/D 221D AN1040 MJE2955T MJF2955 MJF3055

    isolated dc linear feedback op-amp

    Abstract: TL 431 regulator TL 431 of op-amp LM 250 optocoupler as isolated linear opamp 3 phase smps circuit diagram infrared emitters and detectors 431 regulator ISOLATION OPAMP TL431
    Text: APPLICATIONS OPTOELECTRONICS Bob Krause ● Frank Möllmer Optoelectronic feedback control for linear and switched-mode power supplies II Thanks to optocouplers, designers of switched-mode power supplies can now implement voltage regulators which do not impair


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    Motorola transistors MJE3055

    Abstract: Motorola transistors MJE2955 IC TC 3588 MJE2955 power amplifier circuit MJE2955 mje3055 transistor MJE3055 1N5825 MJD2955 30 amp npn transistor
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA NPN M JD 2955 Com plem entary Power Transistors PNP M JD 3055 DPAK For Surface Mount Applications ‘ Motorola Preferred Device Designed for general purpose amplifier and low speed switching applications. • • • •


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    PDF MJE2955 MJE3055 1Ol50Â MJD6036 MJD3039 Motorola transistors MJE3055 Motorola transistors MJE2955 IC TC 3588 MJE2955 power amplifier circuit mje3055 transistor MJE3055 1N5825 MJD2955 30 amp npn transistor

    transistor mj 3055

    Abstract: d2955 transistor Amp 3055 Motorola transistors MJE3055 TO 127 mje3055 127 case data Motorola transistors MJE3055 Motorola transistors MJE2955 transistor 30 j 127 L 3055 motorola mje2955 data
    Text: MOTOROLA Order this document by MJ D2955/D SEMICONDUCTOR TECHNICAL DATA PNP M JD 2955 Com plem entary Power Transistors NPN M JD 3055 DPAK For Surface Mount Applications Designed for general purpose amplifier and low speed switching applications. • • •


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    PDF D2955/D MJE2955 MJE3055 transistor mj 3055 d2955 transistor Amp 3055 Motorola transistors MJE3055 TO 127 mje3055 127 case data Motorola transistors MJE3055 Motorola transistors MJE2955 transistor 30 j 127 L 3055 motorola mje2955 data

    TIP 2n3055

    Abstract: TIP 3055 transistor Amp 3055 of 2n3055 tip 2955 transistor TIP 3055 motorola power transistor 2N3055 M 3055 power transistor 2955 transistor transistor 3055
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA u d ii TIP 3055 Com plem entary Silicon Power Transistors PNP TIP 2955 . . . designed for general-purpose switching and amplifier applications. • • • DC Current Gain — hpg - 2 0 -7 0 @ Iq - 4.0 Adc Collector-Emitter Saturation Voltage — VcE sat " 1 -1 Vc|c (Max) @ Ic = 4.0 Adc


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    MTP2955

    Abstract: TMOS Power FET diode h5e 221A-06 AN569 MTP3055E Motorola TMOS Power FET P-Channel
    Text: b 3 b ? 2 S 4 DO'iflfllb 121 • MOTb M O T O R O L A SC C X S T R S / R F MOTOROLA H SEM ICONDUCTO R TECHNICAL DATA M T P 2955 Designer's Data Sheet Pow er Field Effect Transistor P-Channel Enhancement-Mode Silicon Gate TMOS POWER FET 12 AMPERES RDS on) = 0.3 OHM


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    PDF MTP3055E MTP2955 b3b7254 MTP2955 TMOS Power FET diode h5e 221A-06 AN569 MTP3055E Motorola TMOS Power FET P-Channel

    3055t

    Abstract: bdw 51 52 SGS TIP 32 mj 3055 npn 2955t B0536 bd 911 mj 2955 npn bd 3055 TIP 3771
    Text: Æ J SGS-THOMSON ^ 7# RiiOtglKiiiILKgTORODÊi GENERAL PURPOSE & INDUSTRIAL POWER BIPOLAR EPITAXIAL BASE TRANSISTORS Continued •c v CBO v CEO Package ptot Tyipe NPN PNP hFE Î <C 1 VCE v CEsat ic 1 •b min (A) (V) (V) (W| 3 3 3 3 3 80 80 90 100 115


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    PDF 2N5190 3055t bdw 51 52 SGS TIP 32 mj 3055 npn 2955t B0536 bd 911 mj 2955 npn bd 3055 TIP 3771

    NJ01

    Abstract: No abstract text available
    Text: I . . , A L L E GR O M I C R O S Y S T E M S INC T3 D QS0433Ô 0003751 2 • T-9 1-0 1 PROCESS NJ01 Process NJ01 N-Channel Junction Field-Effect Transistor Process NJ01 is an N-channel junction field-effect


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    PDF 00D37S1 T-91-01 NJ01

    Untitled

    Abstract: No abstract text available
    Text: TIP2955 TIP3055 COMPLEMENTARY SILICON POWER TRANSISTORS • STMicroelectronics PREFERRED SALESTYPES . COMPLEMENTARY PNP - NPN DEVICES DESCRIPTION The TIP3055 is a silicon Epitaxial-Base Planar NPN transistor mountend in TO-218 plastic package. It is intented for power switching


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    PDF TIP2955 TIP3055 TIP3055 O-218 TIP2955. P2955/TIP3055 O-218 OT-93)

    328A-03

    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line Microwave Power Transistors MRW2001 MRW2003 Designed primarily for large-signal output and driver amplifier stages in the 1.0 to 2.3 GHz frequency range. • Designed for Class B or C, Common Base Power Amplifiers


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    PDF MRW2001 MRW2003 28A-03, GP-13) Emitter-RW2001 328A-03

    IN403

    Abstract: No abstract text available
    Text: FUNCTION GUIDE TRANSISTORS 2.1.2 lc D-PACK Type Transistors Device Type VcEO Condition Condition VCE satXV Condition TYP MAX V ce (V) lc (A) M M Hz) Pc (A) (V) NPN PNP MIN MAX 0.5 300 KSH 3 4 0 KSH 350 10 0.05 30 240 1 40 KSH29 KSH 3 0 4 1 15 75 1 0.125 0.7


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    PDF KSH29 KSH31 KSD1221 KSH44H11 KSH3055 KSH45H IN403

    TFK S 186 P

    Abstract: K 2961 tv 2971 2SC2952 New Transistor Manual
    Text: 5 - - FOR U SE BY E L E C T R IC IA N S O V E R S E A S : •M-EiiOSWHE New Transistor Manual lists all the transistors registered with the Electronic Industries Association of Japan (EIAJ), arranged in a manner easy to look up. We hope that you will make full use of the data provided in this manual by referring to the Japanese-English


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    PDF 470MHz, TFK S 186 P K 2961 tv 2971 2SC2952 New Transistor Manual

    40WPK

    Abstract: No abstract text available
    Text: 12E D I t>3ti725M GQflT'IflG 1 | MOTOROLA SC XSTRS/R F MOTOROLA SEMICONDUCTOR MRF1004MA MRF1004MB MRF1004MC TECHNICAL DATA T h e R F L in e 4.0 W MICROWAVE PULSE POWER TRANSISTORS MICROWAVE POWER TRANSISTORS . . . designed for Class B and C common base amplifier applications


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    PDF 3ti725M MRF1004MA MRF1004MB MRF1004MC t3ti72SM MRF1004MA, MRF1004MB, MRF1004MC 40WPK

    3055t

    Abstract: 2955T 2n2646 pin N2647 N-055 3055H n055 2N2646 2N4393 RU 6102
    Text: AD VA NI O E R L I K O N / SEMICOND 3bE D • ü2blbMñ QOQDQ1S 3 ■ S E L I — r - 2 1 /7 - ö SILICON TRANSISTORS SEMICONDUCTORS g Power transistors TYPE NPN ; PNP PD Tc=25°C W VCBO V 117 117 117 117 75 75 75 115 75 150 150 150 117 25 50 25 50 50 50


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    PDF 02Llb4Ã 0D00D1S 3055H 3055T O-220 2955T -TO-220 800ru O-105 O-106 2n2646 pin N2647 N-055 n055 2N2646 2N4393 RU 6102

    JE3055

    Abstract: JE2955 current pm ic 3846 3055 npn mt 3055
    Text: MOTOROLA SC X STR S /R F IS E D | b3b725>l ODBSSSI 1 | DPAK For Surface Mount Applications PIMP M JD2955 NPN M JD3055 T -3 ¡ Íf MOTOROLA SEMICONDUCTOR TECHNICAL DATA Complem entary Pow er Transistors Designed for general purpose am plifier and low speed switching applications.


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    PDF b3b725 JE2955 JE3055 JD2955 JD3055 current pm ic 3846 3055 npn mt 3055

    KT 819 transistor

    Abstract: 2N2222A 338 SF129D SF137D SSY20B KT819W SF127E KFY18 321 KP303W KFY18
    Text: Deutsche Post NfD Studiotechnik Fernsehen Bauelemente - Mitteilung Nr. 6 TRANSISTORVERGLEICHSLISTE Herausgebers Halbleitervergleichsgruppe Studiotechnik Fernsehen Deutsche Post Studiotechnik Fernsehen Bauelemente-Mitteilung Nr. 6 Dez. 79 N f D T r a n s i s t o r v e r g l e i c h s l i s t e


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    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Medium Power Field Effect Transistor P-Channel Enhancement Mode Silicon Gate TMOS E-FET SOT-223 for Surface Mount Motorola Preferred Device TMOS MEDIUM POWER FET 1.2 AMP 60 VOLTS RDS on = 0.3 OHM This advanced E -F E T is a TMOS medium power MOSFET


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    PDF OT-223

    C2688

    Abstract: c2688 transistor 5257 transistor equivalent transistor TIP2955 br c2688 C-2688 c2688 L L72B tRANSISTOR c2688 TIP2955
    Text: TEXAS INSTR {OPTO} 8961726 b5 TEXAS INSTR » F lfiT b lT S b D D 3b 3 62 C 3 6 9 9 8 OPTO TIP2955 P-N-P SILICON POWER TRANSISTOR JAN U ARY 1972 - REVISED OCTOBER 1984 • Designed for Complementary Use with TIP 3055 • 9 0 W at 2 5 ° C C a se Temperature


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    PDF TIP2955 TIP3055 t0-218aa 22eoi2 D0370D3 TIP2955 C2688 c2688 transistor 5257 transistor equivalent transistor TIP2955 br c2688 C-2688 c2688 L L72B tRANSISTOR c2688

    4N35-4N36-4N37

    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA 4 N 35 4N36 4N 37 6 -P in D IP O p to is o la to rs Transistor Output Th e se d e v ic e s c o n s is t o f a g a lliu m a rse n id e in fra re d e m ittin g d io d e o p tic a lly c o u p le d to a m o n o lith ic s ilic o n p h o to tra n s is to r d e te cto r.


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    PDF E54915 4N35-4N36-4N37