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    28F010 Search Results

    28F010 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TN28F010-150-G Rochester Electronics LLC 28F010 - 128K X 8 Flash Visit Rochester Electronics LLC Buy
    TN28F010-90-G Rochester Electronics LLC 28F010 - 128K X 8 Flash Visit Rochester Electronics LLC Buy
    TF28F010-90 Rochester Electronics LLC 28F010 - 128K X 8 Flash Visit Rochester Electronics LLC Buy
    TN28F010-120-G Rochester Electronics LLC 28F010 - 128K X 8 Flash Visit Rochester Electronics LLC Buy
    MR28F010-90/R Rochester Electronics LLC 28F010 - 128K X 8 Flash, Mil Temp Visit Rochester Electronics LLC Buy
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    28F010 Price and Stock

    Rochester Electronics LLC MT28F010-15

    FLASH, 128KX8, 150NS, CQCC32
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey MT28F010-15 Bulk 3
    • 1 -
    • 10 $128.71
    • 100 $128.71
    • 1000 $128.71
    • 10000 $128.71
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    Rochester Electronics LLC MR28F010-90

    FLASH, 128KX8, 90NS, CQCC32
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey MR28F010-90 Bulk 2
    • 1 -
    • 10 $163.99
    • 100 $163.99
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    • 10000 $163.99
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    Rochester Electronics MR28F010-90 1,425 1
    • 1 $157.68
    • 10 $157.68
    • 100 $148.22
    • 1000 $134.03
    • 10000 $134.03
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    Rochester Electronics LLC MF28F010-25

    IC FLASH 1MBIT PARALLEL
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey MF28F010-25 Bulk 4
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    • 10 $93.03
    • 100 $93.03
    • 1000 $93.03
    • 10000 $93.03
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    Rochester Electronics LLC TF28F010-90

    FLASH, 128KX8, 90NS, PDSO32
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey TF28F010-90 Bulk 8
    • 1 -
    • 10 $38.73
    • 100 $38.73
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    Rochester Electronics TF28F010-90 2,074 1
    • 1 $37.24
    • 10 $37.24
    • 100 $35.01
    • 1000 $31.65
    • 10000 $31.65
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    onsemi CAT28F010G12

    IC FLASH 1MBIT PARALLEL 32PLCC
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey CAT28F010G12 Tube
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    Rochester Electronics CAT28F010G12 14 1
    • 1 $12.86
    • 10 $12.86
    • 100 $12.09
    • 1000 $10.93
    • 10000 $10.93
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    Find more 28F010 price and stock on Findchips.com

    28F010 Datasheets (18)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    28F010 Intel 1024K (128K x 8) CMOS FLASH MEMORY Original PDF
    28F010 Intel 1024K (128K x 8) CMOS FLASH MEMORY Original PDF
    28F010 Intel 1024K (128K x 8) FLASH MEMORY Original PDF
    28F010 Intel 1024K (256K x 8) CMOS Flash Memory Scan PDF
    28F010 Intel 1024K CMOS Flash Memory Scan PDF
    28F010 Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    28F010 Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    28F010 Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    28F010 Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    28F010 Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    28F0101024K Intel 28F010 1024K (128K x 8) CMOS FLASH MEMORY Original PDF
    28F010-15A Philips Semiconductors 1024K-Bit Flash Memory (128K x 8) Scan PDF
    28F010-15F Philips Semiconductors 1024K-Bit Flash Memory (128K x 8) Scan PDF
    28F010-15N Philips Semiconductors 1024K-Bit Flash Memory (128K x 8) Scan PDF
    28F010I-17A Philips Semiconductors 1024K-Bit Flash Memory (128K x 8) Scan PDF
    28F010I-17F Philips Semiconductors 1024K-Bit Flash Memory (128K x 8) Scan PDF
    28F010I-17N Philips Semiconductors 1024K-Bit Flash Memory (128K x 8) Scan PDF
    28F010M-17F Philips Semiconductors 1024K-Bit Flash Memory (128K x 8) Scan PDF

    28F010 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    28F010

    Abstract: TN28F010 N28F010-120 TN28F010-120 1N914 80C186 tn28f010-150 PLCC pin configuration 80c186 29020
    Text: E 28F010 1024K 128K X 8 CMOS FLASH MEMORY 8 n n n n n n n Flash Electrical Chip-Erase  1 Second Typical Chip-Erase Quick-Pulse Programming Algorithm  10 µs Typical Byte-Program  2 Second Chip-Program n n 100,000 Erase/Program Cycles 12.0 V ±5% V PP


    Original     		PDF 28F010 1024K 28F010 32-Pin 32-Lead E28F010-90 N28F010-90 E28F010-120 N28F010-120 TN28F010 N28F010-120 TN28F010-120 1N914 80C186 tn28f010-150 PLCC pin configuration 80c186 29020

    intel 28F256

    Abstract: intel 28F256 flash 28F256 a15 diode a4 3f D021 A15-11 a3 electronic device A1610 transistor A16
    Text: HSP ADAPTER SYSTEM GENERAL FLASH EPROM Hi-Speed Programming T S O P 3 2 . H S P S O C K E T B O AR D v Date : 1998/11/25 v Board ID : 01h v Socket : IC191-0322-001 YAMAICHI v Devices List : JP1 : 1-2 short Manufacture Intel Device 28F256A, 28F256(12v)/(12.8v), 28F512, 28F010, 28F020


    Original     		PDF IC191-0322-001 28F256A, 28F256 28F512, 28F010, 28F020 32-LEAD intel 28F256 intel 28F256 flash a15 diode a4 3f D021 A15-11 a3 electronic device A1610 transistor A16

    29F020

    Abstract: 28F020 TN28F010 intel 28F010 N28F010-120 N28F020-150 28F010 80C186 E28F010 N28F010
    Text: E 5 VOLT BULK ERASE FLASH MEMORY 28F010 and 28F020 x8 n n n n n n n Flash Electrical Chip-Erase  1-Mbit: 1 Second Typical Chip-Erase  2-Mbit: 2 Second Typical Chip-Erase Quick-Pulse Programming Algorithm  10 µs Typical Byte-Program  1-Mbit: 1 Second Chip-Program


    Original     		PDF 28F010 28F020 32-Lead P28F010-90 P28F010-120 P28F010-150 TN28F010-90 TN28F010-120 TN28F010-150 TP28F010-90 29F020 28F020 TN28F010 intel 28F010 N28F010-120 N28F020-150 80C186 E28F010 N28F010

    a6628

    Abstract: intel 28F256 intel 28F256 flash IC51-0324-453 28F256A a7529 IC51 28F010 28F020 28F256
    Text: HSP ADAPTER SYSTEM GENERAL FLASH EPROM Hi-Speed Programming P L C C 3 2 . H S P S O C K E T B O AR D v Date : 1998/11/25 v Board ID : 0Bh v Socket : IC51-0324-453 YAMAICHI v Devices List : JP1 : 1-2 short Manufacture Intel Device 28F256A, 28F256(12v)/(12.8v), 28F512, 28F010, 28F020


    Original     		PDF IC51-0324-453 28F256A, 28F256 28F512, 28F010, 28F020 a6628 intel 28F256 intel 28F256 flash IC51-0324-453 28F256A a7529 IC51 28F010 28F020

    Untitled

    Abstract: No abstract text available
    Text: CRTRLYST S E M I C O N D U C T O R 2231 CALLE DE LUNA, SANTA CLARA, CA 95054 Telephone: 408 748-7700 Fax: (408) 980-8209 28F010/28F010I 1 Megabit (128K x 8) CMOS FLASH MEMORY DESCRIPTION FEATURES The C 28F010/28F0101 is a high speed 128K x 8-bit electrically erasable and reprogrammable


    OCR Scan     		PDF CAT28F010/28F010I AT28F010/28F0101

    TN28F010

    Abstract: 29020
    Text: 1024K 128K X 28F010 8 CMOS FLASH MEMORY • Flash Electrical Chlp-Erase — 1 Second Typical Chlp-Erase ■ Quick Pulse Programming Algorithm — 10 ¡is Typical Byte-Program — 2 Second Chip-Program ■ 100,000 Erase/Program Cycles ■ 12.0V ± 5 % Vpp


    OCR Scan     		PDF 1024K 28F010 USA/E69Q/1093/5K/MS TN28F010 29020

    D28F010-120P1C4

    Abstract: D28F010-12 28F010150P 28F010P 29020 N28F010-200P1C4 D28F010 28F010
    Text: INTEL CORP M EM OR Y / L O G I C 15E D I MflSbl7b QObllOl 0 I ir'iraSMUWULfM^lrtU 28F010 T'H6-I5'Z7 1024K 128K x 8 CMOS FLASH MEMORY • Flash Electrical Chip-Erase — 1 Second Typical Chip-Erase ■ Quick-Pulse Program m ing Algorithm — 10 jus Typical Byte-Program


    OCR Scan     		PDF 28F010 1024K T-46-13-27 D28F010-120P1C4 D28F010-150P1C4 D28F010-200P1C4 N28F010-120P1C4 N28F010-150P1C4 N28F010-200P1C4 ER-20, D28F010-12 28F010150P 28F010P 29020 N28F010-200P1C4 D28F010

    BIOS 32 Pin PLCC

    Abstract: circuit diagram of flash bios A1048 circuit diagram of plcc NM27C010 NM28F010
    Text: 28F010 S g National Æ M Semiconductor ADVANCE INFORMATION 28F010 1-Mbit 131,072-Word x 8-Bit CMOS FLASH General Description Features T h e N M 28F010 is a 1,048,576-bit FLASH E lectrically Eras­ able and Program m able non-volatile M em ory device. The


    OCR Scan     		PDF NM28F010 072-Word NM28F010 576-bit NM2BF010 32-pin ns/120 BIOS 32 Pin PLCC circuit diagram of flash bios A1048 circuit diagram of plcc NM27C010

    29020

    Abstract: No abstract text available
    Text: in te i 28F010 1024K 128K x 8 CMOS FLASH MEMORY Flash Electrical Chip-Erase — 1 Second Typical Chip-Erase Quick Pulse Programming Algorithm — 10 ju-s Typical Byte-Program — 2 Second Chip-Program 100,000 Erase/Program Cycles 12.0V ± 5 % Vpp High-Performance Read


    OCR Scan     		PDF 28F010 1024K 28F010-65 28F010-90 29020

    Untitled

    Abstract: No abstract text available
    Text: in te l 28F010 1024K 128K x 8 FLASH MEMORY SmartDie Product Specification Flash Electrical Chip Erase — 1 Second Typical Chip Erase Quick-Pulse Programming Algorithm — 10 |as Typical Byte Program — 2 Second Chip Program 100K Erase/Program Cycles Typical


    OCR Scan     		PDF 28F010 1024K 28F400B EFt-20, ER-24, RR-60, AP-316, AP-325,

    Untitled

    Abstract: No abstract text available
    Text: AMENDMENT AMDB A m 2 8 F 01 0A Data Sheet 1 9 96 Flash P r o d u c t s D ata B o o k / H a n d b o o k INTRODUCTION This amendment supersedes information regarding the Am 28F010A device in the 1996 Flash Products Data Book/Handbook, PI D 11796D. This document includes


    OCR Scan     		PDF 28F010A 11796D. 16778C. IN3064 16778C-20 16778C-21

    PPH 2222 36

    Abstract: 29f020 P28F010-150 29020 28F010-150N 28f010
    Text: in te i 5 VOLT BULK ERASE FLASH MEMORY 28F010 and 28F020 x8 Flash Electrical Chip-Erase — 1-Mbit: 1 Second Typical Chip-Erase — 2-Mbit: 2 Second Typical Chip-Erase Command Register Architecture for Microprocessor/Microcontroller Compatible Write Interface


    OCR Scan     		PDF 28F010 28F020 32-Lead 28F010-90 28F010-120 28F010-150 28F020-90 PPH 2222 36 29f020 P28F010-150 29020 28F010-150N

    29020

    Abstract: No abstract text available
    Text: i n y 28F010 1024K 128K x 8 CMOS FLASH MEMORY Flash E lectrical C h ip -E rase — 1 S ec o n d T yp ic al C h ip-E rase Q uick Pulse P ro g ram m in g A lg orith m — 10 jus T yp ic al B y te-P ro g ra m — 2 S ec o n d C h ip -P ro g ram • ■ — M axim um L atch -U p Im m u n ity


    OCR Scan     		PDF 28F010 1024K 28F010-65 28F010-90 29020

    transistor t 2190

    Abstract: intel 2114 SmartDie 28F010
    Text: inte] 28F010 1024K 128K x 8 FLASH MEMORY SmartDie Product Specification Flash Electrical Chip Erase — 1 Second Typical Chip Erase Quick-Pulse Programming Algorithm — 10ns Typical Byte Program — 2 Second Chip Program 100K Erase/Program Cycles Typical


    OCR Scan     		PDF 28F010 1024K X2BF010-90 ER-20 ER-24, RR-60, AP-316, AP-325, USA/DP-019/694 transistor t 2190 intel 2114 SmartDie

    PLD intel

    Abstract: intel 28F010 07B27 interfacing eprom and eeprom 28f010-150 intel PLD
    Text: INTEL CORP MEMORY/PL] / SbE I 4fl2bl7b Q07bBbl T i l « I T L P in te l 28F010 1024K (128K x 8) CMOS FLASH MEMORY Flash Electrical Chip-Erase — 1 Second Typical Chip-Erase Quick-Pulse Programming Algorithm — 10 jas Typical Byte-Program — 2 Second Chip-Program


    OCR Scan     		PDF Q07bBbl 28F010 1024K NonvolaF010-120 TN28F010-120 P28F010-150 N28F010-150 N28F010-90V05 E28F010-120 E28F010-150 PLD intel intel 28F010 07B27 interfacing eprom and eeprom 28f010-150 intel PLD

    intel 28F010

    Abstract: N28F010-120 28F010 80C186 E28F010
    Text: 28F010 1024K 128K x 8 CMOS FLASH MEMORY Flash Electrical Chip-Erase — 1 Second Typical Chip-Erase Quick Pulse Programming Algorithm — 10 ju.s Typical Byte-Program — 2 Second Chip-Program 100,000 Erase/Program Cycles 12.0V ± 5 % VPP • Command Register Architecture for


    OCR Scan     		PDF 28F010 1024K AP-316, AP-325 from3000 28F010-65 28F010-90 4fl2bl75 intel 28F010 N28F010-120 28F010 80C186 E28F010

    Fujitsu MBM28F010

    Abstract: No abstract text available
    Text: September 1992 Edition 1.0 . DATASHEET M B M 28F010-12/-15/-20 1-MBIT CMOS FLASH MEMORY DESCRIPTION The 28F010 is a 1-Mbit flash memory incorporating fast eras« and byte-programming functions. As in conventional EPROMs, a stuck gate transistor is used for the memory celL The CMOS structure of the peripheral


    OCR Scan     		PDF MBM28F010-12/-15/-20 MBM28F010 32-pin twF32016S-1C MBM28F010-12 Fujitsu MBM28F010

    Untitled

    Abstract: No abstract text available
    Text: 28F010 1024K 128K x 8 CMOS FLASH MEMORY • Flash Electrical Chip-Erase — 1 Second Typical Chip-Erase ■ Command Register Architecture for Microprocessor/Microcontroller Compatible Write interface ■ Quick-Pulse Programming Algorithm — 10 ¿is Typical Byte-Program


    OCR Scan     		PDF 28F010 1024K EF010-120 TF28F010-120 ER-20, ER-24, RR-60, AP-316, AP-325

    Untitled

    Abstract: No abstract text available
    Text: 28F010 1024K 128K X 8 CMOS FLASH MEMORY • Flash Electrical Chip-Erase — 1 Second Typical Chip-Erase ■ Quick-Pulse Programming Algorithm — 10 [is Typical Byte-Program — 2 Second Chip-Program ■ 100,000 Erase/Program Cycles ■ 12.0 V ±5% V pp


    OCR Scan     		PDF 28F010 1024K 32-Pin 32-Lead

    qml-38535

    Abstract: No abstract text available
    Text: AMD i l DISTRIBUTION STATEMENT A . Approved for public release; distribution is unliaited. SM D Drawing Num ber 5962-90899 G eneric Part N um ber 28F010 4-663 n AM D 1. SCOPE 1.1 Scope. This drawing forms a part of a one part - one part nuaber documentation systea see 6 .6 herein . Two


    OCR Scan     		PDF 28F010 HIL-STD-883, HIL-STD-883 5962-9089908MUX 28F010-250 28F010-200 qml-38535

    Untitled

    Abstract: No abstract text available
    Text: FINA: AM D ii A m 28F010A 1 Megabit 128 K x 8-Bit CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms DISTINCTIVE CHARACTERISTICS • Latch-up protected to 100 mA from ■ High performance -1 Vt oVc c +1V Embedded Erase Electrical Bulk Chip Erase


    OCR Scan     		PDF 28F010A 32-pin Am28F010A

    Untitled

    Abstract: No abstract text available
    Text: CATALYST SEMICONDUCTOR 45E » • ITbEbTS G0G14b4 5 BKST T 'H 'I S - 2 7 I C R T R L Y 5 T ¡ S E M I C O N D U C T O R 2231 CALLE D E LUNA, SANTA CLARA, CA 95Û54 Telephone: 408 748-7700 Fax: (408) 980-8209 28F010/28F010I 1 Mégabit (128K x 8) CMOS FLASH MEMORY


    OCR Scan     		PDF G0G14b4 CAT28F010/28F010I CAT28F01CV28F0101 CAT28F010/28F0101

    29F020

    Abstract: 28F010 28F020 80C186 E28F010 N28F010 P28F010 29020
    Text: in te i 5 VOLT BULK ERASE FLASH MEMORY 28F010 and 28F020 x8 Flash Electrical Chip-Erase — 1-Mbit: 1 Second Typical Chip-Erase — 2-Mbit: 2 Second Typical Chip-Erase Command Register Architecture for Microprocessor/M icrocontroller Compatible Write Interface


    OCR Scan     		PDF 28F010 28F020 32-Pin 32-Lead E28F010-90 N28F010-90 E28F010-120 E28F010-150 TE28F010-90 29F020 28F020 80C186 E28F010 N28F010 P28F010 29020

    28F010

    Abstract: A7TA
    Text: Philips Components-Signetics 28F010 Document No. ECN No. Date of Issue A ugust 1 9 9 0 S ta tu s O b je c tiv e Specification 1024K-bit FLASH memory 128K x 8 M e m o ry Prod ucts FEATURES GENERAL DESCRIPTION • 1 2 8 K -b y te w ritab le n o n -vo latile


    OCR Scan     		PDF 28F010 1024K-bit 128K-byte 32-Pin 28F010 A7TA