ic rom 27128
Abstract: 27512 27LV010 ic 2716 27010 27512 data sheet IC 2732 rom 2716 2732 rom 8K 27040
Text: WICE-M4 4MB ROM EMULATOR Supported Devices Capacity Quantity Low voltage Device Device Features 2K 8 2 2716 - 4K 8 2 2732 - 8K 8 2 2764 - 16K 8 2 27128 27LV128 32K 8 2 27256 27LV256 64K 8 2 27512 27LV512 128K 8 2 27010 27LV010 256K 8 2 27020 27LV020 512K 8
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27LV128
27LV256
27LV512
27LV010
27LV020
27LV040
9X/ME/2000/XP
5000m
ic rom 27128
27512
27LV010
ic 2716
27010
27512 data sheet
IC 2732
rom 2716
2732 rom 8K
27040
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49LF002A
Abstract: 2732 eprom 49lf003a N82802AB EPROM 271024 49lf004a IC 2732 pdf datasheet 6264 SRAM ic 6264 pdf datasheet 49LF008A
Text: WICE-8MA EPROM/SRAM Emulaor WICE-8MA Capacity Quantity Device Low voltage Device 2K 8 2 2716 4K 8 2 2732 8K 8 2 2764 16K 8 2 27128 32K 8 2 27256 64K 8 2 27512 128K 8 2 27010 27LV010 256K 8 2 27020 27LV020 512K 8 2 27040 27LV040 1024K 8 1 27080 27LV080 64K 16
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27LV010
27LV020
27LV040
1024K
27LV080
27LV1024
27LV2048
27LV4096
5000m
9X/2000/NT
49LF002A
2732 eprom
49lf003a
N82802AB
EPROM 271024
49lf004a
IC 2732 pdf datasheet
6264 SRAM
ic 6264 pdf datasheet
49LF008A
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winbond 25080
Abstract: 29F200BB 16LF648A 89V51RD2 18f252 89S51 National SEMICONDUCTOR GAL16V8 29sf040 12f675 29F400BB
Text: Dataman-S4 Version 3.00 <ALL> Devices List - 1. S4 8 bit EPROM lib. V3.00 - AMD 27010
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2732B
27C100
27HB010
27C256
27HC64
27C128
27C040
7128A
winbond 25080
29F200BB
16LF648A
89V51RD2
18f252
89S51
National SEMICONDUCTOR GAL16V8
29sf040
12f675
29F400BB
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Device-List
Abstract: cf745 04 p 24LC211 lattice im4a3-32 CF775 MICROCHIP 29F008 im4a3-64 ks24c01 ep320ipc ALL-11P2
Text: Device List Adapter List Converter List for ALL-11 JUL. 2000 Introduction T he Device List lets you know exactly which devices the Universal Programmer currently supports. The Device List also lets you know which devices are supported directly by the standard DIP socket and which
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ALL-11
Z86E73
Z86E83
Z89371
ADP-Z89371/-PL
Z8E000
ADP-Z8E001
Z8E001
Device-List
cf745 04 p
24LC211
lattice im4a3-32
CF775 MICROCHIP
29F008
im4a3-64
ks24c01
ep320ipc
ALL-11P2
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Untitled
Abstract: No abstract text available
Text: Decem ber 1994 Semiconductor 27LV010B 1,048,576-Bit 128k x 8 Low Voltage EPROM General Description Features The N M 27LV010B is a high performance Low Voltage Elec trically Programmable Read Only Memory. It is manufac tured using National’s latest 0 .8 ju, C M O S split gate A M G
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NM27LV010B
576-Bit
27LV010B
20-3A
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27LV010
Abstract: No abstract text available
Text: Ju ly 1998 s e m ic o n d u c t o r 27LV010L 1,048,576-Bit 128Kx8 Low Voltage, Low Power EPROM General Description • Programming Voltage +12.75V ■ Typical programm ing tim e 50|is The FM 27LV010 is a low-pow er 1Mbit, 3.3V-only one-tim e-program m able (OTP) read-only m em ory (EPROM), organized into
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FM27LV010L
576-Bit
128Kx8)
27LV010
150ns,
512Kb
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Untitled
Abstract: No abstract text available
Text: January 1998 S E M IC O N D U C T O R FM 27LV010-L 1 ,048,576-Bit 128K x 8 Low Voltage, Low Pow er EPROM General Description The 27LV010 is a low-power 1Mbit, 3.3V-only one-timeprogrammable (OTP) read-only memory (EPROM), orga nized into 128K words with 8 bits per word. Any byte can be
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FM27LV010-L
576-Bit
27LV010-L
FM27LV010
150ns,
512Kb
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Untitled
Abstract: No abstract text available
Text: December 1994 N M 27LV010B 1,048,576-Bit 128k x 8 Low V o ltag e EPROM General Description Features The 27LV010B is a high performance Low Voltage Elec trically Programmable Read Only Memory. It is manufac tured using National’s latest 0.8p, CMOS split gate AMGtm
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27LV010B
576-Bit
NM27LV010B
20-3A
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NM27LV010
Abstract: T150 T200 T250 i5xf
Text: National N ovem ber 1994 Semiconductor 27LV010 1,048,576-Bit 128k x 8 Low Voltage EPROM General Description T he N M 27LV010 is a high perform ance Low V oltage Electri cally Program m able Read O nly M emory. It Is m anufactured using N ational’s latest O.Sjli C M O S split gate A M G tm
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NM27LV010
576-Bit
NM27LV010
20-3A
T150
T200
T250
i5xf
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NM27LV010B
Abstract: NM27LV010BTE 12.75V PGM fairchild 5555
Text: 27LV010B 1,048,576-Bit 128k x 8 Low Voltage EPROM S E M IC O N D U C T O R tm 27LV010B 1,048,576-Bit (12ôk x 8) Low Voltage EPROM General Description Features The NM 27LV010B is a high performance Low Voltage Electrically Program mable Read Only Memory. It is m anufactured using
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NM27LV010B
576-Bit
NM27LV01
NM27LV010B
operati1793-856856
NM27LV010BTE
12.75V PGM
fairchild 5555
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Untitled
Abstract: No abstract text available
Text: November 1994 Semiconductor N M 27LV010 1,048,576-Bit 128k x 8 Low V o ltag e EPROM General Description The 27LV010 is a high performance Low Voltage Electri cally Programmable Read Only Memory. It is manufactured using National’s latest O.B/j, CMOS split gate AMGtm
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27LV010
576-Bit
NM27LV010
20-3A
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A15C
Abstract: MBH32A NM27LV010
Text: 27LV010 1,048,576-Bit 128k x 8 Low Voltage EPROM S E M I C O N D U C T O R tm 27LV010 1,048,576-Bit (12ôk x 8) Low Voltage EPROM General Description Features The NM 27LV010 is a high performance Low Voltage Electrically Program mable Read Only Memory. It is m anufactured using
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NM27LV010
576-Bit
NM27LV010
Family1793-856856
A15C
MBH32A
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NM27C010
Abstract: NM27LV010
Text: National Semiconductor June 1992 N M 27LV010 1,048,576-Bit 128k x 8 Low V o ltag e EPROM General Description The 27LV010 is a high performance Low Voltage Electri cally Programmable Read Only Memory. It is manufactured using National's latest 1,2/x CMOS split gate SVG EPROM
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NM27LV010
576-Bit
NM27LV010
NM27C010
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Untitled
Abstract: No abstract text available
Text: 27LV010B S E M I C O N D U C T O R TM General Description Features The NM 27LV010B is a high performance Low Voltage Electrically Program mable Read O nly Memory. It is m anufactured using Fairchild’s split gate AM G EPROM technology. This technology
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NM27LV010B
NM27LV010B
576-Bit
27LV010B
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Untitled
Abstract: No abstract text available
Text: PRE LIM INARY Advanced Micro Devices 27LV010/Am27LV01 OB 1 Megabit 131,072 x 8-Bit CMOS EPROM DISTINCTIVE CHARACTERISTICS • Single +3.3 V power supply — Regulated power supply 3.0 V-3.6 V — Unregulated power supply 2.7 V-3.6 V (for battery operated systems)
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Am27LV010/Am27LV01
28-pin
32-pin
7341A-11
Am27LV010/Am27LV010B
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Untitled
Abstract: No abstract text available
Text: 27LV010 Features • • • • • • • • • • • Wide Power Supply Range, 3.0 VDC to 5.5 VDC Compatible w ith JEDEC Standard AT27C010 Low Power 3-Volt CMOS Operation 100 iiA max. Standby 26 mW max. Active at 1 MHz fo r Vcc = 3.3 VDC 138 mW max. Active at 5 MHz fo r Vcc = 5.5 VDC
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AT27LV010
AT27C010
32-Lead
600-mil
32-Pad
AT27LV010-25TC
AT27LV010-30TC
32DW6
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Untitled
Abstract: No abstract text available
Text: 27LV010 Features • • • • • • • • • • • Wide Power Supply Range, 3.0 VDC to 5.5 VDC Compatible with JEDEC Standard AT27C010 Low Power 3-Volt CMOS Operation 100 |iA max. Standby 26 mW max. Active at 1 MHz for Vcc = 3.3 VDC 138 mW max. Active at 5 MHz for Vcc = 5.5 VDC
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AT27LV010
AT27C010
32-Lead
600-mil
32-Pad
Programming-100
T27LV
010-25TC
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Untitled
Abstract: No abstract text available
Text: Features • Fast Read Access Tim e - 70 ns • Dual Voltage Range Operation - Low Voltage Power Supply Range, 3.0V to 3.6V - or Standard 5V ± 10% Supply Range • Com patible with JEDEC Standard AT27C010 • Low Power CMOS Operation - 20 i*A max. less than 1 jiA typical Standby for Vcc = 3.6V
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AT27C010
32-Lead
Ind59)
32-Lead,
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Untitled
Abstract: No abstract text available
Text: a PRELIM INARY Advanced Micro Devices 27LV010/Am27LV01 OB 1 Megabit 131,072 x 8-Bit CMOS EPROM DISTINCTIVE CHARACTERISTICS • Single +3.3 V power supply — Regulated power supply 3.0 V -3.6 V — Unregulated power supply 2.7 V-3.6 V (for battery operated systems)
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Am27LV010/Am27LV01
28-pin
32-pin
7341A-11
Am27LV010/Am27LV010B
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27LV010
Abstract: 1N914 AT27C010 AT27LV010 AT27LV010-12DC V010-25
Text: 27LV010 Features • • • • W ide Power Supply Range, 3.0 V to 5.5 V Fast Read Access Tim e -1 2 0 ns Compatible with JEDEC Standard AT27C010 Low Power 3.3-Volt CMOS Operation 20 iA max. Standby 29 mW max. Active at 5 MHz for Vcc = 3.6 V 138 mW max. Active at 5 MHz for Vcc = 5.5 V
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AT27LV010
AT27C010
32-Lead
600-mil
32-Pad
AT27LV010-25DI
AT27L
V010-25
27LV010
1N914
AT27C010
AT27LV010-12DC
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AT27LV010A-70TC
Abstract: 1N914 AT27C010 AT27LV010A AT27LV010A-70JC 0548C-1
Text: Features • Fast Read Access Tim e - 70 ns • Dual Voltage Range Operation - Low Voltage Power Supply Range, 3.0V to 3.6V - or Standard 5V ± 10% Supply Range • Compatible with JEDEC Standard AT27C010 • Low Power CMOS Operation - 20 i*A max. less than 1 jiA typical Standby for Vcc = 3.6V
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AT27C010
32-Lead
32-Lead,
MO-142
AT27LV010A-70TC
1N914
AT27C010
AT27LV010A
AT27LV010A-70JC
0548C-1
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128K x 8
Abstract: No abstract text available
Text: 27LV010 Features • • • • • • • • • • • Wide Power Supply Range, 3.0 VDC to 5.5 VDC Compatible with JEDEC Standard AT27C010 Low Power 3-Volt CMOS Operation 100 nA max. Standby 26 mW max. Active at 1 MHz for Vcc = 3.3 VDC 138 mW max. Active at 5 MHz for Vcc = 5.5 VDC
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AT27LV010
AT27C010
32-Lead
600-mil
32-Pad
AT27LV010-25T
AT27LV010-30TC
32DW6
128K x 8
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audi a3
Abstract: No abstract text available
Text: ADVANCED MICRO DEVICES S*ÌE D • 025752S ODMS'ìDa 0b7 ■ AUDI PRELIMINARY A m 2 7 L V 0 1 0 131,072 x 8-Bit CMOS Low Voltage, One Time Programmable Memory Advanced Micro Devices DISTINCTIVE CHARACTERISTICS ■ ■ 3.3 V ± 0.3 V Vcc read operation High performance at 3.3 Vcc
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025752S
Am27LV010
025752S
00H2117
6262A
audi a3
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NM27LV010B
Abstract: No abstract text available
Text: D ecem ber 1994 27LV010B 1,048,576-Bit 128k x 8 Low Voltage EPROM General Description Features The N M 27LV 010B is a high perform ance Low Voltage E lec trica lly Program m able Read O nly Memory. It is m anufac tured using N ational’s latest 0.8/j, C M OS split gate AMGtm
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NM27LV010B
576-Bit
NM27LV010B
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