2222a
Abstract: marking code k22 dual npn 500ma CMKT2222A 2222a central
Text: Central CMKT2222A TM Semiconductor Corp. ULTRAminiTM SURFACE MOUNT DUAL NPN SMALL SIGNAL SWITCHING TRANSISTORS DESCRIPTION: The CENTRAL SEMICONDUCTOR CMKT2222A consists of two individual, isolated 2222A NPN silicon transistors, manufactured by the epitaxial
|
Original
|
PDF
|
CMKT2222A
OT-363
OT-363
100mA,
150mA,
x10-4
2222a
marking code k22
dual npn 500ma
CMKT2222A
2222a central
|
transistor 2222a
Abstract: CMLT2222A MARKING CODE l22 2222a central
Text: Central CMLT2222A SURFACE MOUNT PICOminiTM DUAL NPN SMALL SIGNAL SILICON SWITCHING TRANSISTORS TM Semiconductor Corp. DESCRIPTION: The CENTRAL SEMICONDUCTOR CMLT2222A consists of two individual, isolated 2222A NPN silicon transistors, manufactured by the epitaxial
|
Original
|
PDF
|
CMLT2222A
OT-563
OT-563
100mA,
150mA,
x10-4
transistor 2222a
CMLT2222A
MARKING CODE l22
2222a central
|
marking code k22
Abstract: 2222a transistor 2222a data sheet dual npn 500ma CMKT2222A transistor 2222a
Text: CMKT2222A SURFACE MOUNT ULTRAminiTM DUAL NPN SMALL SIGNAL SILICON SWITCHING TRANSISTORS Central TM Semiconductor Corp. DESCRIPTION: The CENTRAL SEMICONDUCTOR CMKT2222A consists of two individually isolated 2222A NPN silicon transistors, manufactured by the epitaxial
|
Original
|
PDF
|
CMKT2222A
OT-363
OT-363
150mA,
x10-4
marking code k22
2222a
transistor 2222a data sheet
dual npn 500ma
CMKT2222A
transistor 2222a
|
m1b marking
Abstract: MMBT2222 MMBT2222A 1N914 MMBT2222ALT1 MMBT2222LT1 2222A MOTOROLA
Text: MOTOROLA Order this document by MMBT2222LT1/D SEMICONDUCTOR TECHNICAL DATA General Purpose Transistors NPN Silicon MMBT2222LT1 MMBT2222ALT1* COLLECTOR 3 *Motorola Preferred Device 1 BASE 2 EMITTER MAXIMUM RATINGS 3 1 Rating Symbol 2222 2222A Unit Collector – Emitter Voltage
|
Original
|
PDF
|
MMBT2222LT1/D
MMBT2222LT1
MMBT2222ALT1*
236AB)
MMBT2222LT1/D*
m1b marking
MMBT2222
MMBT2222A
1N914
MMBT2222ALT1
MMBT2222LT1
2222A MOTOROLA
|
1N914
Abstract: MMBT2222 MMBT2222A MMBT2222ALT1 MMBT2222LT1 2222a
Text: ON Semiconductort MMBT2222LT1 MMBT2222ALT1* General Purpose Transistors NPN Silicon *ON Semiconductor Preferred Device MAXIMUM RATINGS Rating Symbol 2222 2222A Unit Collector–Emitter Voltage VCEO 30 40 Vdc Collector–Base Voltage VCBO 60 75 Vdc Emitter–Base Voltage
|
Original
|
PDF
|
MMBT2222LT1
MMBT2222ALT1*
r14525
MMBT2222LT1/D
1N914
MMBT2222
MMBT2222A
MMBT2222ALT1
MMBT2222LT1
2222a
|
Untitled
Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-363 Plastic-Encapsulate Transistors MMDT2227 TRANSISTOR NPN+PNP SOT-363 FEATURE Epitaxial planar die construction One 2222A NPN One 2907A PNP z Ideal for power amplification and switching MARKING: K27
|
Original
|
PDF
|
OT-363
MMDT2227
OT-363
-500mA
-150mA,
-15mA
-500mA,
|
M1B marking
Abstract: transistor 2222a data sheet LMBT2222ALT1G 1N914 LMBT2222ALT1 LMBT2222LT1 LMBT2222LT1G
Text: LESHAN RADIO COMPANY, LTD. General Purpose Transistors LMBT2222LT1 LMBT2222ALT1 NPN Silicon • Pb−Free Package May be Available. The G−Suffix Denotes a 3 Pb−Free Lead Finish 1 MAXIMUM RATINGS Rating 2 Symbol 2222 2222A Unit Collector–Emitter Voltage
|
Original
|
PDF
|
LMBT2222LT1
LMBT2222ALT1
LMBT2222LT1
M1B marking
transistor 2222a data sheet
LMBT2222ALT1G
1N914
LMBT2222ALT1
LMBT2222LT1G
|
1P marking
Abstract: LMBT2222ALT1G m1b marking LMBT2222LT1G 1N914 f250300
Text: LESHAN RADIO COMPANY, LTD. General Purpose Transistors LMBT2222LT1G LMBT2222ALT1G NPN Silicon • We declare that the material of product compliance with RoHS requirements. 3 1 MAXIMUM RATINGS Rating 2 Symbol 2222 2222A Unit Collector–Emitter Voltage V CEO
|
Original
|
PDF
|
LMBT2222LT1G
LMBT2222ALT1G
3000/Tape
OT-23
1P marking
LMBT2222ALT1G
m1b marking
LMBT2222LT1G
1N914
f250300
|
2907A
Abstract: 2222a npn 2907A 2222a NPN tr 2222a npn-pnp dual NPN, PNP for 500ma, 30v 2222A transistors 22222a transistor 2222a data sheet
Text: MMDT2227DW NPN+PNP Dual General Purpose Transistors P b Lead Pb -Free 6 5 1 Features: * Complementary Pair * Epitaxial Planar Die Construction * Ultra-Small Surface Mount Package * One 2222A Type (NPN),One 2907A Type (PNP) * Ideal for Low Power Amplification and Switching
|
Original
|
PDF
|
MMDT2227DW
OT-363
SC-88)
J-STD-020C
MIL-STD-202,
06-Dec-07
OT-363
2907A
2222a
npn 2907A
2222a NPN
tr 2222a
npn-pnp dual
NPN, PNP for 500ma, 30v
2222A transistors
22222a
transistor 2222a data sheet
|
Untitled
Abstract: No abstract text available
Text: LESHAN RADIO COMPANY, LTD. General Purpose Transistors LMBT2222LT1 LMBT2222ALT1 3 COLLECTOR 1 BASE 2 EMITTER MAXIMUM RATINGS Rating 3 Symbol 2222 2222A Unit Collector–Emitter Voltage V CEO 30 40 Vdc Collector–Base Voltage V CBO 60 75 Vdc Emitter–Base Voltage
|
Original
|
PDF
|
LMBT2222LT1
LMBT2222ALT1
LMBT2222LT1
OT-23
LMBT2222â
|
Untitled
Abstract: No abstract text available
Text: General Purpose Transistors NPN Silicon MMBT2222LT1 MMBT2222ALT1 3 COLLECTOR 1 BASE 2 EMITTER MAXIMUM RATINGS Rating 3 Symbol 2222 2222A Unit Collector–Emitter Voltage V CEO 30 40 Vdc Collector–Base Voltage V CBO 60 75 Vdc Emitter–Base Voltage V 5.0
|
Original
|
PDF
|
MMBT2222LT1
MMBT2222ALT1
236AB)
De4-4714
MMBT2222LT1
|
m1b marking
Abstract: 1N914 MMBT2222 MMBT2222A MMBT2222ALT1 MMBT2222LT1 2222A MOTOROLA 1N914 SOT-23
Text: MOTOROLA Order this document by MMBT2222LT1/D SEMICONDUCTOR TECHNICAL DATA General Purpose Transistors NPN Silicon MMBT2222LT1 MMBT2222ALT1* COLLECTOR 3 *Motorola Preferred Device 1 BASE 2 EMITTER MAXIMUM RATINGS 3 1 Rating Symbol 2222 2222A Unit Collector – Emitter Voltage
|
Original
|
PDF
|
MMBT2222LT1/D
MMBT2222LT1
MMBT2222ALT1*
236AB)
MMBT2222LT1/D*
m1b marking
1N914
MMBT2222
MMBT2222A
MMBT2222ALT1
MMBT2222LT1
2222A MOTOROLA
1N914 SOT-23
|
2222a
Abstract: dual npn 500ma transistor 2222a data sheet CMLT2222A MARKING CODE l22
Text: Central CMLT2222A CMLT2222AG* SURFACE MOUNT DUAL NPN SMALL SIGNAL SILICON SWITCHING TRANSISTORS SOT-563 CASE TM Semiconductor Corp. DESCRIPTION: These CENTRAL SEMICONDUCTOR devices consist of two 2 isolated 2222A NPN silicon transistors, manufactured by the epitaxial planar process and epoxy
|
Original
|
PDF
|
CMLT2222A
CMLT2222AG*
OT-563
CMLT2222A:
x10-4
100mA,
150mA,
2222a
dual npn 500ma
transistor 2222a data sheet
CMLT2222A
MARKING CODE l22
|
Untitled
Abstract: No abstract text available
Text: LESHAN RADIO COMPANY, LTD. General Purpose Transistors LMBT2222LT1 LMBT2222ALT1 NPN Silicon • Pb−Free Package May be Available. The G−Suffix Denotes a 3 Pb−Free Lead Finish 1 MAXIMUM RATINGS Rating 2 Symbol 2222 2222A Unit Collector–Emitter Voltage
|
Original
|
PDF
|
LMBT2222LT1
LMBT2222ALT1
LMBT2222LT1
|
|
Untitled
Abstract: No abstract text available
Text: LESHAN RADIO COMPANY, LTD. General Purpose Transistors LMBT2222LT1G LMBT2222ALT1G NPN Silicon • Pb−Free Package May be Available. The G−Suffix Denotes a 3 Pb−Free Lead Finish 1 MAXIMUM RATINGS Rating 2 Symbol 2222 2222A Unit Collector–Emitter Voltage
|
Original
|
PDF
|
LMBT2222LT1G
LMBT2222ALT1G
|
transistor 2222a to-92
Abstract: MMBT2222ALT1 1P Marking code CS 1n914 SOD123 2305 SOT-23
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA General Purpose Transistors NPN Silicon MMBT2222LT1 MMBT2222ALT1* COLLECTOR 3 *Motorola Preferred Device 1 BASE 2 EMITTER MAXIMUM RATINGS 3 1 Rating Symbol 2222 2222A Unit Collector – Emitter Voltage VCEO 30 40 Vdc Collector – Base Voltage
|
Original
|
PDF
|
MMBT2222LT1
MMBT2222ALT1*
236AB)
transistor 2222a to-92
MMBT2222ALT1 1P
Marking code CS
1n914 SOD123
2305 SOT-23
|
2907 TRANSISTOR PNP
Abstract: 2907a TRANSISTOR PNP 2907a
Text: 2N2907 / 2N2907A PNP Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivided into one group according to its DC current gain. As complementary type the NPN transistor ST 2222 and ST 2222A are recommended.
|
Original
|
PDF
|
2N2907
2N2907A
500mA,
150mA,
100MHz
2907 TRANSISTOR PNP
2907a TRANSISTOR PNP
2907a
|
2N2222
Abstract: PN2222 2N2222A 2N2222 pnp 2N2222-PN2222 FN2222A 2n2222 micro electronics PN2222A le PN2222A 2N2222 power
Text: 2N2222 PN 2222 2 N 2222A PN 2222A THE 2N2222, 2N2222A, PN2222, PN2222A ARE NPN SILICON PLANAR EPITAXIAL TRANSISTORS FOR GENERAL PURPOSE AMPLIFIERS AND MEDIUM SPEED SWITCHING APPLICATIONS. THEY ARE COMPLEMENTARY TO THE FNP TYPE 2N2907, 2N2907A, PN2907, PN2907A RESPECTIVELY.
|
OCR Scan
|
PDF
|
2N2222
PN2222
2N2222A
PN2222A
2N2222,
2N2222A,
PN2222,
2N2907,
2N2907A,
2N2222 pnp
2N2222-PN2222
FN2222A
2n2222 micro electronics
PN2222A le
2N2222 power
|
transistor 2222a
Abstract: k019 2222A transistor M2907A 2222a tm2907 2222A transistors ip 2222A
Text: SEC SILICON TRANSISTORS ELECTRON DEVICE N T M 2 2 2 2 A ,N T M 2 2 2 2 A R GENERAL PURPOSE AMPLIFIER, HIGH SPEED SW ITCHING NPN SILICON EPITAXIAL TRANSISTOR "M INI MOLD TYPE” DESCRIPTION The N TM 2222A , N TM 2222A R are designed fo r general purpose am p lifie r and high speed sw itching applications, especially
|
OCR Scan
|
PDF
|
|
Untitled
Abstract: No abstract text available
Text: Centrar CMKT2222A Semiconductor Corp. ULTRAmini SURFACE MOUNT DUAL NPN SMALL SIGNAL SWITCHING TRANSISTORS DESCRIPTION: The CENTRAL SEMICONDUCTOR CMKT2222A consists of two individual, isolated 2222A NPN silicon transistors, manufactured by the epitaxial
|
OCR Scan
|
PDF
|
CMKT2222A
OT-363
OT-363
13-November
|
marking code k22
Abstract: transistor 2222a k22 transistor sot-363 MARKING l0 MARKING CODE c26
Text: Central CMKT2222A Semiconductor Corp. ULTRAmini SURFACE MOUNT DUAL NPN SMALL SIGNAL SWITCHING TRANSISTORS DESCRIPTION: The CENTRAL SEM ICONDUCTOR CMKT2222A consists of two individual, isolated 2222A NPN silicon transistors, manufactured by the epitaxial
|
OCR Scan
|
PDF
|
CMKT2222A
OT-363
OT-363
13-November
marking code k22
transistor 2222a
k22 transistor
sot-363 MARKING l0
MARKING CODE c26
|
Untitled
Abstract: No abstract text available
Text: Central CMLT2222A Semiconductor Corp. SURFACE MOUNT PICOmini DUAL NPN SMALL SIGNAL SILICON SWITCHING TRANSISTORS DESCRIPTION: The CENTRAL SEMICONDUCTOR CMLT2222A consists of two individual, isolated 2222A NPN silicon transistors, manufactured by the epitaxial
|
OCR Scan
|
PDF
|
CMLT2222A
OT-563
OT-563
13-November
|
transistor k70
Abstract: No abstract text available
Text: Central CMKT2207 Semiconductor Corp. SURFACE MOUNT ULTRAmini COMPLEMENTARY SILICON TRANSISTORS DESCRIPTION: The CENTRAL SEMICONDUCTOR CMKT2207 consists of one 2222A NPN transistor and an individual isolated complementary 2907A PNP transistor, manufactured by the epitaxial planar
|
OCR Scan
|
PDF
|
CMKT2207
OT-363
X10-4
X10-4
OT-363
13-November
transistor k70
|
Untitled
Abstract: No abstract text available
Text: 32E D • â23b320 0017103 7 H S IP NPN Silicon Switching Transistors PZT 2222;PZT 2222A SIEMENS/ SPCLi SEMICONDS _ • High DC current gain: 0.1 to 500 mA • Low collector -emitter saturation voltage • Complementary types: PZT 2907 PNP PZT 2907A (PNP)
|
OCR Scan
|
PDF
|
23b320
12-mm
Q62702-Z2026
OT-223
PZT2222A
Q62702-Z2027
150Hz
200ns
10Mfi
|