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    2222A TRANSISTORS Search Results

    2222A TRANSISTORS Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    2222A TRANSISTORS Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    2222a

    Abstract: marking code k22 dual npn 500ma CMKT2222A 2222a central
    Text: Central CMKT2222A TM Semiconductor Corp. ULTRAminiTM SURFACE MOUNT DUAL NPN SMALL SIGNAL SWITCHING TRANSISTORS DESCRIPTION: The CENTRAL SEMICONDUCTOR CMKT2222A consists of two individual, isolated 2222A NPN silicon transistors, manufactured by the epitaxial


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    PDF CMKT2222A OT-363 OT-363 100mA, 150mA, x10-4 2222a marking code k22 dual npn 500ma CMKT2222A 2222a central

    transistor 2222a

    Abstract: CMLT2222A MARKING CODE l22 2222a central
    Text: Central CMLT2222A SURFACE MOUNT PICOminiTM DUAL NPN SMALL SIGNAL SILICON SWITCHING TRANSISTORS TM Semiconductor Corp. DESCRIPTION: The CENTRAL SEMICONDUCTOR CMLT2222A consists of two individual, isolated 2222A NPN silicon transistors, manufactured by the epitaxial


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    PDF CMLT2222A OT-563 OT-563 100mA, 150mA, x10-4 transistor 2222a CMLT2222A MARKING CODE l22 2222a central

    marking code k22

    Abstract: 2222a transistor 2222a data sheet dual npn 500ma CMKT2222A transistor 2222a
    Text: CMKT2222A SURFACE MOUNT ULTRAminiTM DUAL NPN SMALL SIGNAL SILICON SWITCHING TRANSISTORS Central TM Semiconductor Corp. DESCRIPTION: The CENTRAL SEMICONDUCTOR CMKT2222A consists of two individually isolated 2222A NPN silicon transistors, manufactured by the epitaxial


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    PDF CMKT2222A OT-363 OT-363 150mA, x10-4 marking code k22 2222a transistor 2222a data sheet dual npn 500ma CMKT2222A transistor 2222a

    m1b marking

    Abstract: MMBT2222 MMBT2222A 1N914 MMBT2222ALT1 MMBT2222LT1 2222A MOTOROLA
    Text: MOTOROLA Order this document by MMBT2222LT1/D SEMICONDUCTOR TECHNICAL DATA General Purpose Transistors NPN Silicon MMBT2222LT1 MMBT2222ALT1* COLLECTOR 3 *Motorola Preferred Device 1 BASE 2 EMITTER MAXIMUM RATINGS 3 1 Rating Symbol 2222 2222A Unit Collector – Emitter Voltage


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    PDF MMBT2222LT1/D MMBT2222LT1 MMBT2222ALT1* 236AB) MMBT2222LT1/D* m1b marking MMBT2222 MMBT2222A 1N914 MMBT2222ALT1 MMBT2222LT1 2222A MOTOROLA

    1N914

    Abstract: MMBT2222 MMBT2222A MMBT2222ALT1 MMBT2222LT1 2222a
    Text: ON Semiconductort MMBT2222LT1 MMBT2222ALT1* General Purpose Transistors NPN Silicon *ON Semiconductor Preferred Device MAXIMUM RATINGS Rating Symbol 2222 2222A Unit Collector–Emitter Voltage VCEO 30 40 Vdc Collector–Base Voltage VCBO 60 75 Vdc Emitter–Base Voltage


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    PDF MMBT2222LT1 MMBT2222ALT1* r14525 MMBT2222LT1/D 1N914 MMBT2222 MMBT2222A MMBT2222ALT1 MMBT2222LT1 2222a

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-363 Plastic-Encapsulate Transistors MMDT2227 TRANSISTOR NPN+PNP SOT-363 FEATURE Epitaxial planar die construction One 2222A NPN One 2907A PNP z Ideal for power amplification and switching MARKING: K27


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    PDF OT-363 MMDT2227 OT-363 -500mA -150mA, -15mA -500mA,

    M1B marking

    Abstract: transistor 2222a data sheet LMBT2222ALT1G 1N914 LMBT2222ALT1 LMBT2222LT1 LMBT2222LT1G
    Text: LESHAN RADIO COMPANY, LTD. General Purpose Transistors LMBT2222LT1 LMBT2222ALT1 NPN Silicon • Pb−Free Package May be Available. The G−Suffix Denotes a 3 Pb−Free Lead Finish 1 MAXIMUM RATINGS Rating 2 Symbol 2222 2222A Unit Collector–Emitter Voltage


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    PDF LMBT2222LT1 LMBT2222ALT1 LMBT2222LT1 M1B marking transistor 2222a data sheet LMBT2222ALT1G 1N914 LMBT2222ALT1 LMBT2222LT1G

    1P marking

    Abstract: LMBT2222ALT1G m1b marking LMBT2222LT1G 1N914 f250300
    Text: LESHAN RADIO COMPANY, LTD. General Purpose Transistors LMBT2222LT1G LMBT2222ALT1G NPN Silicon • We declare that the material of product compliance with RoHS requirements. 3 1 MAXIMUM RATINGS Rating 2 Symbol 2222 2222A Unit Collector–Emitter Voltage V CEO


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    PDF LMBT2222LT1G LMBT2222ALT1G 3000/Tape OT-23 1P marking LMBT2222ALT1G m1b marking LMBT2222LT1G 1N914 f250300

    2907A

    Abstract: 2222a npn 2907A 2222a NPN tr 2222a npn-pnp dual NPN, PNP for 500ma, 30v 2222A transistors 22222a transistor 2222a data sheet
    Text: MMDT2227DW NPN+PNP Dual General Purpose Transistors P b Lead Pb -Free 6 5 1 Features: * Complementary Pair * Epitaxial Planar Die Construction * Ultra-Small Surface Mount Package * One 2222A Type (NPN),One 2907A Type (PNP) * Ideal for Low Power Amplification and Switching


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    PDF MMDT2227DW OT-363 SC-88) J-STD-020C MIL-STD-202, 06-Dec-07 OT-363 2907A 2222a npn 2907A 2222a NPN tr 2222a npn-pnp dual NPN, PNP for 500ma, 30v 2222A transistors 22222a transistor 2222a data sheet

    Untitled

    Abstract: No abstract text available
    Text: LESHAN RADIO COMPANY, LTD. General Purpose Transistors LMBT2222LT1 LMBT2222ALT1 3 COLLECTOR 1 BASE 2 EMITTER MAXIMUM RATINGS Rating 3 Symbol 2222 2222A Unit Collector–Emitter Voltage V CEO 30 40 Vdc Collector–Base Voltage V CBO 60 75 Vdc Emitter–Base Voltage


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    PDF LMBT2222LT1 LMBT2222ALT1 LMBT2222LT1 OT-23 LMBT2222â

    Untitled

    Abstract: No abstract text available
    Text: General Purpose Transistors NPN Silicon MMBT2222LT1 MMBT2222ALT1 3 COLLECTOR 1 BASE 2 EMITTER MAXIMUM RATINGS Rating 3 Symbol 2222 2222A Unit Collector–Emitter Voltage V CEO 30 40 Vdc Collector–Base Voltage V CBO 60 75 Vdc Emitter–Base Voltage V 5.0


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    PDF MMBT2222LT1 MMBT2222ALT1 236AB) De4-4714 MMBT2222LT1

    m1b marking

    Abstract: 1N914 MMBT2222 MMBT2222A MMBT2222ALT1 MMBT2222LT1 2222A MOTOROLA 1N914 SOT-23
    Text: MOTOROLA Order this document by MMBT2222LT1/D SEMICONDUCTOR TECHNICAL DATA General Purpose Transistors NPN Silicon MMBT2222LT1 MMBT2222ALT1* COLLECTOR 3 *Motorola Preferred Device 1 BASE 2 EMITTER MAXIMUM RATINGS 3 1 Rating Symbol 2222 2222A Unit Collector – Emitter Voltage


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    PDF MMBT2222LT1/D MMBT2222LT1 MMBT2222ALT1* 236AB) MMBT2222LT1/D* m1b marking 1N914 MMBT2222 MMBT2222A MMBT2222ALT1 MMBT2222LT1 2222A MOTOROLA 1N914 SOT-23

    2222a

    Abstract: dual npn 500ma transistor 2222a data sheet CMLT2222A MARKING CODE l22
    Text: Central CMLT2222A CMLT2222AG* SURFACE MOUNT DUAL NPN SMALL SIGNAL SILICON SWITCHING TRANSISTORS SOT-563 CASE TM Semiconductor Corp. DESCRIPTION: These CENTRAL SEMICONDUCTOR devices consist of two 2 isolated 2222A NPN silicon transistors, manufactured by the epitaxial planar process and epoxy


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    PDF CMLT2222A CMLT2222AG* OT-563 CMLT2222A: x10-4 100mA, 150mA, 2222a dual npn 500ma transistor 2222a data sheet CMLT2222A MARKING CODE l22

    Untitled

    Abstract: No abstract text available
    Text: LESHAN RADIO COMPANY, LTD. General Purpose Transistors LMBT2222LT1 LMBT2222ALT1 NPN Silicon • Pb−Free Package May be Available. The G−Suffix Denotes a 3 Pb−Free Lead Finish 1 MAXIMUM RATINGS Rating 2 Symbol 2222 2222A Unit Collector–Emitter Voltage


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    PDF LMBT2222LT1 LMBT2222ALT1 LMBT2222LT1

    Untitled

    Abstract: No abstract text available
    Text: LESHAN RADIO COMPANY, LTD. General Purpose Transistors LMBT2222LT1G LMBT2222ALT1G NPN Silicon • Pb−Free Package May be Available. The G−Suffix Denotes a 3 Pb−Free Lead Finish 1 MAXIMUM RATINGS Rating 2 Symbol 2222 2222A Unit Collector–Emitter Voltage


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    PDF LMBT2222LT1G LMBT2222ALT1G

    transistor 2222a to-92

    Abstract: MMBT2222ALT1 1P Marking code CS 1n914 SOD123 2305 SOT-23
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA General Purpose Transistors NPN Silicon MMBT2222LT1 MMBT2222ALT1* COLLECTOR 3 *Motorola Preferred Device 1 BASE 2 EMITTER MAXIMUM RATINGS 3 1 Rating Symbol 2222 2222A Unit Collector – Emitter Voltage VCEO 30 40 Vdc Collector – Base Voltage


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    PDF MMBT2222LT1 MMBT2222ALT1* 236AB) transistor 2222a to-92 MMBT2222ALT1 1P Marking code CS 1n914 SOD123 2305 SOT-23

    2907 TRANSISTOR PNP

    Abstract: 2907a TRANSISTOR PNP 2907a
    Text: 2N2907 / 2N2907A PNP Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivided into one group according to its DC current gain. As complementary type the NPN transistor ST 2222 and ST 2222A are recommended.


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    PDF 2N2907 2N2907A 500mA, 150mA, 100MHz 2907 TRANSISTOR PNP 2907a TRANSISTOR PNP 2907a

    2N2222

    Abstract: PN2222 2N2222A 2N2222 pnp 2N2222-PN2222 FN2222A 2n2222 micro electronics PN2222A le PN2222A 2N2222 power
    Text: 2N2222 PN 2222 2 N 2222A PN 2222A THE 2N2222, 2N2222A, PN2222, PN2222A ARE NPN SILICON PLANAR EPITAXIAL TRANSISTORS FOR GENERAL PURPOSE AMPLIFIERS AND MEDIUM SPEED SWITCHING APPLICATIONS. THEY ARE COMPLEMENTARY TO THE FNP TYPE 2N2907, 2N2907A, PN2907, PN2907A RESPECTIVELY.


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    PDF 2N2222 PN2222 2N2222A PN2222A 2N2222, 2N2222A, PN2222, 2N2907, 2N2907A, 2N2222 pnp 2N2222-PN2222 FN2222A 2n2222 micro electronics PN2222A le 2N2222 power

    transistor 2222a

    Abstract: k019 2222A transistor M2907A 2222a tm2907 2222A transistors ip 2222A
    Text: SEC SILICON TRANSISTORS ELECTRON DEVICE N T M 2 2 2 2 A ,N T M 2 2 2 2 A R GENERAL PURPOSE AMPLIFIER, HIGH SPEED SW ITCHING NPN SILICON EPITAXIAL TRANSISTOR "M INI MOLD TYPE” DESCRIPTION The N TM 2222A , N TM 2222A R are designed fo r general purpose am p lifie r and high speed sw itching applications, especially


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    PDF

    Untitled

    Abstract: No abstract text available
    Text: Centrar CMKT2222A Semiconductor Corp. ULTRAmini SURFACE MOUNT DUAL NPN SMALL SIGNAL SWITCHING TRANSISTORS DESCRIPTION: The CENTRAL SEMICONDUCTOR CMKT2222A consists of two individual, isolated 2222A NPN silicon transistors, manufactured by the epitaxial


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    PDF CMKT2222A OT-363 OT-363 13-November

    marking code k22

    Abstract: transistor 2222a k22 transistor sot-363 MARKING l0 MARKING CODE c26
    Text: Central CMKT2222A Semiconductor Corp. ULTRAmini SURFACE MOUNT DUAL NPN SMALL SIGNAL SWITCHING TRANSISTORS DESCRIPTION: The CENTRAL SEM ICONDUCTOR CMKT2222A consists of two individual, isolated 2222A NPN silicon transistors, manufactured by the epitaxial


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    PDF CMKT2222A OT-363 OT-363 13-November marking code k22 transistor 2222a k22 transistor sot-363 MARKING l0 MARKING CODE c26

    Untitled

    Abstract: No abstract text available
    Text: Central CMLT2222A Semiconductor Corp. SURFACE MOUNT PICOmini DUAL NPN SMALL SIGNAL SILICON SWITCHING TRANSISTORS DESCRIPTION: The CENTRAL SEMICONDUCTOR CMLT2222A consists of two individual, isolated 2222A NPN silicon transistors, manufactured by the epitaxial


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    PDF CMLT2222A OT-563 OT-563 13-November

    transistor k70

    Abstract: No abstract text available
    Text: Central CMKT2207 Semiconductor Corp. SURFACE MOUNT ULTRAmini COMPLEMENTARY SILICON TRANSISTORS DESCRIPTION: The CENTRAL SEMICONDUCTOR CMKT2207 consists of one 2222A NPN transistor and an individual isolated complementary 2907A PNP transistor, manufactured by the epitaxial planar


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    PDF CMKT2207 OT-363 X10-4 X10-4 OT-363 13-November transistor k70

    Untitled

    Abstract: No abstract text available
    Text: 32E D • â23b320 0017103 7 H S IP NPN Silicon Switching Transistors PZT 2222;PZT 2222A SIEMENS/ SPCLi SEMICONDS _ • High DC current gain: 0.1 to 500 mA • Low collector -emitter saturation voltage • Complementary types: PZT 2907 PNP PZT 2907A (PNP)


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    PDF 23b320 12-mm Q62702-Z2026 OT-223 PZT2222A Q62702-Z2027 150Hz 200ns 10Mfi