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    diode 12A3

    Abstract: No abstract text available
    Text: MDI100-12A3 IGBT NPT Module VCES = 1200 V I C25 = 135 A VCE(sat) = 2.2 V Buck Chopper + free wheeling Diode Part number MDI100-12A3 Backside: isolated 1 7 6 3 2 Features / Advantages: Applications: Package: Y4 ● NPT IGBT technology ● low saturation voltage


    Original
    PDF MDI100-12A3 60747and 20131206a diode 12A3

    diode 12A3

    Abstract: No abstract text available
    Text: MID145-12A3 IGBT NPT Module VCES = 1200 V I C25 = 160 A VCE(sat) = 2.2 V Boost Chopper + free wheeling Diode Part number MID145-12A3 Backside: isolated 1 3 4 5 2 Features / Advantages: Applications: Package: Y4 ● NPT IGBT technology ● low saturation voltage


    Original
    PDF MID145-12A3 60747and 20131206a diode 12A3

    Untitled

    Abstract: No abstract text available
    Text: MID100-12A3 IGBT NPT Module VCES = 1200 V I C25 = 135 A VCE(sat) = 2.2 V Boost Chopper + free wheeling Diode Part number MID100-12A3 Backside: isolated 1 3 4 5 2 Features / Advantages: Applications: Package: Y4 ● NPT IGBT technology ● low saturation voltage


    Original
    PDF MID100-12A3 60747and 20131206a

    Untitled

    Abstract: No abstract text available
    Text: MID75-12A3 IGBT NPT Module VCES = 1200 V I C25 = 90 A VCE(sat) = 2.2 V Boost Chopper + free wheeling Diode Part number MID75-12A3 Backside: isolated 1 3 4 5 2 Features / Advantages: Applications: Package: Y4 ● NPT IGBT technology ● low saturation voltage


    Original
    PDF MID75-12A3 60747and 20131206a

    diode 12A3

    Abstract: No abstract text available
    Text: MDI145-12A3 IGBT NPT Module VCES = 1200 V I C25 = 160 A VCE(sat) = 2.2 V Buck Chopper + free wheeling Diode Part number MDI145-12A3 Backside: isolated 1 7 6 3 2 Features / Advantages: Applications: Package: Y4 ● NPT IGBT technology ● low saturation voltage


    Original
    PDF MDI145-12A3 60747and 20131206a diode 12A3

    MII145-12A3

    Abstract: No abstract text available
    Text: MII145-12A3 IGBT NPT Module VCES = 2x 1200 V I C25 = 160 A VCE(sat) = 2.2 V Phase leg Part number MII145-12A3 Backside: isolated 1 7 6 3 4 5 2 Features / Advantages: Applications: Package: Y4 ● NPT IGBT technology ● low saturation voltage ● low switching losses


    Original
    PDF MII145-12A3 60747and 20131206a MII145-12A3

    MII100

    Abstract: No abstract text available
    Text: MII100-12A3 IGBT NPT Module VCES = 2x 1200 V I C25 = 135 A VCE(sat) = 2.2 V Phase leg Part number MII100-12A3 Backside: isolated 1 7 6 3 4 5 2 Features / Advantages: Applications: Package: Y4 ● NPT IGBT technology ● low saturation voltage ● low switching losses


    Original
    PDF MII100-12A3 60747and 20131206a MII100

    Untitled

    Abstract: No abstract text available
    Text: MDI75-12A3 IGBT NPT Module VCES = 1200 V I C25 = 90 A VCE(sat) = 2.2 V Buck Chopper + free wheeling Diode Part number MDI75-12A3 Backside: isolated 1 7 6 3 2 Features / Advantages: Applications: Package: Y4 ● NPT IGBT technology ● low saturation voltage


    Original
    PDF MDI75-12A3 60747and 20131206a

    MII75-12A3

    Abstract: No abstract text available
    Text: MII75-12A3 IGBT NPT Module VCES = 2x 1200 V I C25 = 90 A VCE(sat) = 2.2 V Phase leg Part number MII75-12A3 Backside: isolated 1 7 6 3 4 5 2 Features / Advantages: Applications: Package: Y4 ● NPT IGBT technology ● low saturation voltage ● low switching losses


    Original
    PDF MII75-12A3 60747and 20131206a MII75-12A3