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    200V 10A MOSFET Search Results

    200V 10A MOSFET Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    2SK3160-E Renesas Electronics Corporation Nch Single Power Mosfet 200V 10A 170Mohm To-220Fm Visit Renesas Electronics Corporation
    MG800FXF1JMS3 Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC SBD、Low-side: SiC MOSFET Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation
    XPJ1R004PB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 40 V, 160 A, 0.001 Ω@10V, S-TOGL Visit Toshiba Electronic Devices & Storage Corporation

    200V 10A MOSFET Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: PD-97808 Radiation Hardended, Solid-State Relay with Buffered Inputs Product Summary RDHB710SE20A2SX Dual, 200V, 10A 5 Part Number Breakdown Voltage Current tr / tf Logic Drive Voltage RDHB710SE20A2SX 200V 10A Controlled 3.3V 8-PIN SURFACE MOUNT Description


    Original     		PDF PD-97808 RDHB710SE20A2SX RDHB710SE20A2SX MIL-PRF-38534

    Untitled

    Abstract: No abstract text available
    Text: RCD100N20 Nch 200V 10A Power MOSFET Datasheet lOutline VDSS 200V RDS on (Max.) 182mW ID 10A PD 20W CPT3 (SC-63) <SOT-428> (1) (2) (3) lFeatures lInner circuit 1) Low on-resistance. (1) Gate (2) Drain (3) Source 2) Fast switching speed. 3) Drive circuits can be simple.


    Original     		PDF RCD100N20 182mW SC-63) OT-428> C10N20 R1102A

    Untitled

    Abstract: No abstract text available
    Text: RCD100N20 Nch 200V 10A Power MOSFET Data Sheet lOutline VDSS 200V RDS on (Max.) 182mW ID 10A PD 20W CPT3 (SC-63) <SOT-428> (1) (2) (3) lFeatures lInner circuit 1) Low on-resistance. (1) Gate (2) Drain (3) Source 2) Fast switching speed. 3) Drive circuits can be simple.


    Original     		PDF RCD100N20 182mW SC-63) OT-428> C10N20 R1102A

    irfp9240

    Abstract: IRFP9243
    Text: IRFP9240, IRFP9241, IRFP9242, IRFP9243 S E M I C O N D U C T O R -10A and -12A, -200V and -150V, 0.50 and 0.70 Ohm, P-Channel Power MOSFETs December 1997 Features Description • -10A and -12A, -200V and -150V These are P-Channel enhancement mode silicon gate


    Original     		PDF IRFP9240, IRFP9241, IRFP9242, IRFP9243 -200V -150V, TA17522. 199st irfp9240 IRFP9243

    Untitled

    Abstract: No abstract text available
    Text: HY18N20D 200V / 18A N-Channel Enhancement Mode MOSFET 200V, RDS ON =92mW@VGS=10V, ID=10A Features TO-252 • Low On-State Resistance • Excellent Gate Charge x RDS(ON) Product ( FOM ) • Fully Characterized Avalanche Voltage and Current • Specially Desigened for DC-DC Converter, Off-line UPS,


    Original     		PDF HY18N20D O-252 2002/95/EC O-252 MIL-STD-750 18N20D 250mA

    IRF P CHANNEL MOSFET 200V 20A

    Abstract: P Channel Power MOSFET IRF IRF P CHANNEL MOSFET N CHANNEL MOSFET 10A 1000V IRF P-Channel FET 200v 20A IRF P CHANNEL MOSFET 10A 100V p channel mosfet 100v 70a to-252 IRF P CHANNEL MOSFET 100v IRF P-Channel FET 100v IRF P CHANNEL MOSFET TO-252
    Text: 30V 1000V 200V 100V 0.014Ω 60V RF1S9630SM Note 200V, 6.5A, 0.800Ω RF1S4N100SM 1000V, 4.3A, 3.500Ω RF1S630SM 200V, 9A, 0.400Ω 0A TO 10A S E M I C O N D U C TO R 3.500Ω 0.800Ω 0.500Ω 0.400Ω 0.18Ω 0.300Ω 0.200Ω 0.160Ω 0.080Ω 0.077Ω


    Original     		PDF RF1S9630SM RF1S4N100SM RF1S630SM RF1S70N06SM RF1S70N03SM O-263AB) LC96586 IRF P CHANNEL MOSFET 200V 20A P Channel Power MOSFET IRF IRF P CHANNEL MOSFET N CHANNEL MOSFET 10A 1000V IRF P-Channel FET 200v 20A IRF P CHANNEL MOSFET 10A 100V p channel mosfet 100v 70a to-252 IRF P CHANNEL MOSFET 100v IRF P-Channel FET 100v IRF P CHANNEL MOSFET TO-252

    Untitled

    Abstract: No abstract text available
    Text: HY18N20T 200V / 18A N-Channel Enhancement Mode MOSFET 200V, RDS ON =92mW@VGS=10V, ID=10A Features TO-220AB • Low On-State Resistance • Excellent Gate Charge x RDS(ON) Product ( FOM ) • Fully Characterized Avalanche Voltage and Current • Specially Desigened for DC-DC Converter, Off-line UPS,


    Original     		PDF HY18N20T O-220AB 2002/95/EC O-220AB MIL-STD-750 18N20T 50PCS/TUBE

    Untitled

    Abstract: No abstract text available
    Text: AP15T20GH-HF Halogen-Free Product Advanced Power Electronics Corp. N-CHANNEL ENHANCEMENT MODE POWER MOSFET Simple Drive Requirement Lower Gate Charge Fast Switching Characteristics BVDSS RDS ON ID D RoHS Compliant & Halogen-Free 200V 250m 10A G S Description


    Original     		PDF AP15T20GH-HF O-252 100us 100ms Fig10.

    Untitled

    Abstract: No abstract text available
    Text: AP15T20GI-HF Halogen-Free Product Advanced Power Electronics Corp. N-CHANNEL ENHANCEMENT MODE POWER MOSFET Simple Drive Requirement Lower Gate Charge Fast Switching Characteristics D RoHS Compliant & Halogen-Free BVDSS RDS ON ID 200V 250m 10A G S Description


    Original     		PDF AP15T20GI-HF AP15T20 O-220CFM 100us 100ms Fig10.

    Untitled

    Abstract: No abstract text available
    Text: AP15T20GS-HF Halogen-Free Product Advanced Power Electronics Corp. N-CHANNEL ENHANCEMENT MODE POWER MOSFET Simple Drive Requirement Lower Gate Charge Fast Switching Characteristics BVDSS RDS ON ID D RoHS Compliant & Halogen-Free 200V 250m 10A G S Description


    Original     		PDF AP15T20GS-HF O-263 100ms Fig10.

    Untitled

    Abstract: No abstract text available
    Text: AP15T20AGH-HF Halogen-Free Product Advanced Power Electronics Corp. N-CHANNEL ENHANCEMENT MODE POWER MOSFET Simple Drive Requirement Lower Gate Charge Fast Switching Characteristics BVDSS RDS ON ID D RoHS Compliant & Halogen-Free 200V 250m 10A G S Description


    Original     		PDF AP15T20AGH-HF O-252 Rating01 Fig10.

    Untitled

    Abstract: No abstract text available
    Text: SHINDENGEN VZ Series Power MOSFET 2SK2559 F10F20VZ N-Channel Enhancement type OUTLINE DIMENSIONS Case : FTO-220 (Unit : mm) 200V 10A FEATURES ●Input capacitance (Ciss) is small. Especially, input capacitance at 0 biass is small. ●The static Rds(on) is small.


    Original     		PDF 2SK2559 F10F20VZ FTO-220 2-24V

    2SK2559

    Abstract: No abstract text available
    Text: SHINDENGEN VZ Series Power MOSFET 2SK2559 F10F20VZ N-Channel Enhancement type OUTLINE DIMENSIONS Case : FTO-220 (Unit : mm) 200V 10A FEATURES Input capacitance (Ciss) is small. Especially, input capacitance at 0 biass is small. The static Rds(on) is small.


    Original     		PDF 2SK2559 F10F20VZ FTO-220 2-24V 2SK2559

    2SK2559

    Abstract: No abstract text available
    Text: SHINDENGEN VZ Series Power MOSFET 2SK2559 F10F20VZ N-Channel Enhancement type OUTLINE DIMENSIONS Case : FTO-220 (Unit : mm) 200V 10A FEATURES ● Input capacitance (Ciss) is small. Especially, input capacitance at 0 biass is small. ● The static Rds(on) is small.


    Original     		PDF 2SK2559 F10F20VZ FTO-220 2-24V 2SK2559

    STB10NB20

    Abstract: No abstract text available
    Text: STB10NB20 N-CHANNEL 200V - 0.30Ω - 10A D2PAK PowerMESH MOSFET • ■ ■ ■ ■ ■ TYPE VDSS RDS on ID STB10NB20 200 V <0.40 Ω 10 A TYPICAL RDS(on) = 0.30 Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED VERY LOW INTRINSIC CAPACITANCES


    Original     		PDF STB10NB20 STB10NB20

    2SK2520-01MR

    Abstract: 2SK2520
    Text: 2SK2520-01MR N-channel MOS-FET FAP-II Series 200V > Features - 0,4Ω 10A 30W > Outline Drawing High Speed Switching Low On-Resistance No Secondary Breakdown Low Driving Power High Voltage VGS = ± 30V Guarantee Avalanche Proof > Applications - Switching Regulators


    Original     		PDF 2SK2520-01MR 2SK2520-01MR 2SK2520

    2SK2519-01

    Abstract: No abstract text available
    Text: 2SK2519-01 N-channel MOS-FET FAP-II Series 200V > Features - 0,4Ω 10A 40W > Outline Drawing High Speed Switching Low On-Resistance No Secondary Breakdown Low Driving Power High Voltage VGS = ± 30V Guarantee Avalanche Proof > Applications - Switching Regulators


    Original     		PDF 2SK2519-01 2SK2519-01

    Untitled

    Abstract: No abstract text available
    Text: 2SK2519-01 N-channel MOS-FET FAP-II Series 200V > Features - 0,4Ω 10A 40W > Outline Drawing High Speed Switching Low On-Resistance No Secondary Breakdown Low Driving Power High Voltage VGS = ± 30V Guarantee Avalanche Proof > Applications - Switching Regulators


    Original     		PDF 2SK2519-01

    2SK2519-01

    Abstract: 200v 10A mosfet
    Text: 2SK2519-01 N-channel MOS-FET FAP-II Series 200V > Features - 0,4Ω 10A 40W > Outline Drawing High Speed Switching Low On-Resistance No Secondary Breakdown Low Driving Power High Voltage VGS = ± 30V Guarantee Avalanche Proof > Applications - Switching Regulators


    Original     		PDF 2SK2519-01 2SK2519-01 200v 10A mosfet

    2sk2520

    Abstract: 2SK2520-01MR
    Text: 2SK2520-01MR N-channel MOS-FET FAP-II Series 200V > Features - 0,4Ω 10A 30W > Outline Drawing High Speed Switching Low On-Resistance No Secondary Breakdown Low Driving Power High Voltage VGS = ± 30V Guarantee Avalanche Proof > Applications - Switching Regulators


    Original     		PDF 2SK2520-01MR 2sk2520 2SK2520-01MR

    Untitled

    Abstract: No abstract text available
    Text: 2SK2520-01MR N-channel MOS-FET FAP-II Series 200V > Features - 0,4Ω 10A 30W > Outline Drawing High Speed Switching Low On-Resistance No Secondary Breakdown Low Driving Power High Voltage VGS = ± 30V Guarantee Avalanche Proof > Applications - Switching Regulators


    Original     		PDF 2SK2520-01MR

    p10nb20

    Abstract: p10nb20f p10nb
    Text: STP10NB20 STP10NB20FP N-CHANNEL 200V - 0.25 Ω - 10A TO-220/TO-220FP PowerMESH MOSFET Figure 1. Package Table 1. General Features Type VDSS RDS on ID STP10NB20 200 V < 0.40 Ω 10 A STP10NB20FP 200 V < 0.40 Ω 6A FEATURES SUMMARY • TYPICAL RDS(on) = 0.25 Ω


    Original     		PDF O-220/TO-220FP STP10NB20 STP10NB20FP STP10NB20FP O-220 O-220FP p10nb20 p10nb20f p10nb

    IRFP9240

    Abstract: TA17522 irfp9243
    Text: IRFP9240, IRFP9241, IRFP9242, IRFP9243 H a rris -10A and -12A, -200V and -150V, 0.50 and 0.70 Ohm, P-Channel Power MOSFETs December 1997 Features Description • -10A and -12A, -200V and -150V • High Input Impedance These are P-Channel enhancement mode silicon gate


    OCR Scan     		PDF IRFP9240, IRFP9241, IRFP9242, IRFP9243 -200V -150V, TA17522. RFP9240, RFP9241, RFP9242, IRFP9240 TA17522 irfp9243

    irfp9240

    Abstract: No abstract text available
    Text: HAJims S IRFP9240, IRFP9241, IRFP9242, IRFP9243 Semiconductor y y -10A and -12A, -200V and -150V, 0.50 and 0.70 Ohm, P-Channel Power MOSFETs December 1997 Features Description • -10A and -12A, -200V and -150V • High Input Impedance These are P-Channel enhancement mode silicon gate


    OCR Scan     		PDF IRFP9240, IRFP9241, IRFP9242, IRFP9243 -200V -150V, -150V RFP9240, irfp9240