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    200N10P Search Results

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    200N10P Price and Stock

    Littelfuse Inc IXFK200N10P

    MOSFET N-CH 100V 200A TO264AA
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    DigiKey IXFK200N10P Tube 300 1
    • 1 $15.16
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    Newark IXFK200N10P Bulk 300
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    RS IXFK200N10P Bulk 8 Weeks 25
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    Littelfuse Inc IXTK200N10P

    MOSFET N-CH 100V 200A TO264
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    DigiKey IXTK200N10P Tube 233 1
    • 1 $11.87
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    • 100 $9.0824
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    Littelfuse Inc IXFR200N10P

    MOSFET N-CH 100V 133A ISOPLUS247
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    DigiKey IXFR200N10P Tube 128 1
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    Newark IXFR200N10P Bulk 300
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    RS IXFR200N10P Bulk 8 Weeks 30
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    Littelfuse Inc IXFN200N10P

    MOSFET N-CH 100V 200A SOT-227B
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    DigiKey IXFN200N10P Tube 14 1
    • 1 $25.83
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    RS IXFN200N10P Bulk 8 Weeks 10
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    Littelfuse Inc IXFX200N10P

    MOSFET N-CH 100V 200A PLUS247-3
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    DigiKey IXFX200N10P Tube 300
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    Find more 200N10P price and stock on Findchips.com

    200N10P Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    200N10P

    Abstract: IXFN200N10P TO-227B IXFX200N10P PLUS247 IXFN200N10P IXYS
    Text: Advanced Technical Information PolarTM HiPerFET Power MOSFET VDSS ID25 IXFN 200N10P IXFK 200N10P IXFX 200N10P RDS on = 100 V = 200 A Ω = 7.5 mΩ N-Channel Enhancement Mode Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 175°C TJ = 25°C to 175°C; RGS = 1 MΩ


    Original     		PDF 200N10P OT-227 E153432 IXFX200N10P IXFN200N10P 200N10P IXFN200N10P TO-227B IXFX200N10P PLUS247 IXFN200N10P IXYS

    200N10P

    Abstract: No abstract text available
    Text: Advanced Technical Information PolarHTTM Power MOSFET IXTK 200N10P VDSS ID25 RDS on = 100 V = 200 A Ω = 7.5 mΩ N-Channel Enhancement Mode Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 175°C TJ = 25°C to 175°C; RGS = 1 MΩ VGSM ID25


    Original     		PDF 200N10P O-264 200N10P

    HiPerFET Power MOSFETs

    Abstract: 710 115 HiperFET ds99365
    Text: Advanced Technical Information PolarTM HiPerFET Power MOSFET IXTR 200N10P VDSS ID25 RDS on Electrically Isolated Tab = 100 V = 133 A Ω = 8 mΩ N-Channel Enhancement Mode Fast Recovery Diode, Avavanche Rated Symbol Test Conditions VDSS TJ = 25°C to 175°C


    Original     		PDF 200N10P 247TM E153432 HiPerFET Power MOSFETs 710 115 HiperFET ds99365

    200N10P

    Abstract: DIODE 630
    Text: PolarHTTM Power MOSFET IXTK 200N10P VDSS = 100 V ID25 = 200 A Ω RDS on ≤ 7.5 mΩ N-Channel Enhancement Mode Avalanche Rated Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25° C to 175° C TJ = 25° C to 175° C; RGS = 1 MΩ 100 100 V V VGS VGSM


    Original     		PDF 200N10P 200N10P DIODE 630

    200N10P

    Abstract: ISOPLUS247
    Text: PolarTM HiPerFET Power MOSFET VDSS = 100 V ID25 = 133 A Ω RDS on ≤ 9 mΩ ≤ 150 ns tRR IXFR 200N10P Electrically Isolated Tab N-Channel Enhancement Mode Fast Recovery Diode, Avavanche Rated Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 175°C


    Original     		PDF 200N10P 03-22-06-E 200N10P ISOPLUS247

    200N10P

    Abstract: HiperFET ISOPLUS247
    Text: Advanced Technical Information PolarTM HiPerFET Power MOSFET IXFR 200N10P VDSS ID25 RDS on Electrically Isolated Tab = 100 V = 133 A Ω = 8 mΩ N-Channel Enhancement Mode Fast Recovery Diode, Avavanche Rated Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 175°C


    Original     		PDF 200N10P ISOPLUS247 E153432 200N10P HiperFET ISOPLUS247

    Untitled

    Abstract: No abstract text available
    Text: PolarHTTM Power MOSFET VDSS = 100 V ID25 = 200 A Ω RDS on ≤ 7.5 mΩ IXTK 200N10P N-Channel Enhancement Mode Avalanche Rated Symbol Test Conditions VDSS VDGR TJ = 25° C to 175° C TJ = 25° C to 175° C; RGS = 1 MΩ 100 100 V V VGS VGSM Continuous Transient


    Original     		PDF 200N10P VDD12.

    200N10P

    Abstract: No abstract text available
    Text: Advanced Technical Information PolarHTTM Power MOSFET IXTK 200N10P VDSS ID25 RDS on = 100 V = 200 A Ω = 7.5 mΩ N-Channel Enhancement Mode Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 175°C TJ = 25°C to 175°C; RGS = 1 MΩ VGSM ID25


    Original     		PDF 200N10P O-264 200N10P

    200N10P

    Abstract: No abstract text available
    Text: Advanced Technical Information PolarTM HiPerFET Power MOSFET VDSS ID25 IXTR 200N10P RDS on Electrically Isolated Tab = 100 V = 133 A Ω = 9.0 mΩ N-Channel Enhancement Mode Fast Recovery Diode, Avavanche Rated Symbol Test Conditions VDSS TJ = 25°C to 175°C


    Original     		PDF 200N10P 247TM E153432 200N10P

    Untitled

    Abstract: No abstract text available
    Text: PolarTM HiPerFET Power MOSFET VDSS = 100 V ID25 = 200 A Ω RDS on ≤ 7.5 mΩ ≤ 150 ns trr IXFK 200N10P IXFX 200N10P N-Channel Enhancement Mode Fast Intrinsic Diode Avalanche Rated Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 175°C TJ = 25°C to 175°C; RGS = 1 MΩ


    Original     		PDF 200N10P O-264

    Untitled

    Abstract: No abstract text available
    Text: PolarTM HiPerFET Power MOSFET VDSS = 100 V ID25 = 200 A Ω RDS on ≤ 7.5 mΩ ≤ 150 ns trr IXFN 200N10P N-Channel Enhancement Mode Fast Intrinsic Diode Avalanche Rated Symbol Test Conditions VDSS VDGR TJ = 25°C to 175°C TJ = 25°C to 175°C; RGS = 1 MΩ


    Original     		PDF 200N10P 03-22-06-E

    200N10P

    Abstract: PLUS247
    Text: PolarTM HiPerFET Power MOSFET VDSS = 100 V ID25 = 200 A Ω RDS on ≤ 7.5 mΩ ≤ 150 ns trr IXFK 200N10P IXFX 200N10P N-Channel Enhancement Mode Fast Intrinsic Diode Avalanche Rated Symbol Test Conditions VDSS VDGR TJ = 25°C to 175°C TJ = 25°C to 175°C; RGS = 1 MΩ


    Original     		PDF 200N10P O-264 200N10P PLUS247

    200N1

    Abstract: ISOPLUS247 200N10P TR 505 T200N
    Text: PolarTM HiPerFET Power MOSFET IXTR 200N10P VDSS = 100 V ID25 = 120 A Ω 8 mΩ RDS on ≤ Electrically Isolated Tab N-Channel Enhancement Mode Avalanche Rated Fast Recovery Diode Symbol Test Conditions VDSS TJ = 25° C to 175° C 100 V VDGR TJ = 25° C to 175° C; RGS = 1 MΩ


    Original     		PDF 200N10P 247TM E153432 03-22-06-E 200N1 ISOPLUS247 200N10P TR 505 T200N

    Untitled

    Abstract: No abstract text available
    Text: PolarTM HiPerFET Power MOSFET VDSS = 100 V ID25 = 200 A Ω RDS on ≤ 7.5 mΩ ≤ 150 ns trr IXFN 200N10P N-Channel Enhancement Mode Fast Intrinsic Diode Avalanche Rated Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 175°C TJ = 25°C to 175°C; RGS = 1 MΩ


    Original     		PDF 200N10P OT-227 E153432 03-22-06-E

    Untitled

    Abstract: No abstract text available
    Text: PolarTM HiPerFET Power MOSFET VDSS = 100 V ID25 = 120 A Ω RDS on ≤ 8 mΩ IXTR 200N10P Electrically Isolated Tab N-Channel Enhancement Mode Avalanche Rated Fast Recovery Diode Symbol Test Conditions VDSS TJ = 25° C to 175° C 100 V VDGR TJ = 25° C to 175° C; RGS = 1 MΩ


    Original     		PDF 200N10P 247TM E153432 03-22-06-E

    IXTD08N100P-1A

    Abstract: IXTQ22N60P IXFH20N80P DWS20-200A IXFH24N80P IXFK180N15P IXTQ22N50P DWHP16-12 IXGH64N60A3 IXFB50N80Q2
    Text: www.ixys.com Contents Page Symbols and Definitions Nomenclature General Informations for Chips Assembly Instructions FRED, Rectifier Diode and Thyristor Chips in Planar Design 2 2 3 4 5 IGBT Chips VCES G-Series, Low VCE sat B2 Types G-Series, Fast C2 Types


    Original     		PDF

    7N60B equivalent

    Abstract: 18N50 equivalent ixgh 1499 MOSFET smd 4407 IXDD 614 C 547 B W57 BJT transistor r1275ns20l R1271ns12C IXYS CS 20-22 MOF1 IXTP 220N04T2
    Text: Contents Page General Contents QA and Environmental Management Systems Alphanumeric Index Symbols and Terms Nomenclature Patents and Intellectual Property I II III XVIII XX XXII CLARE Optically Isolated Solid State Relays Optically Isolated AC-Power Switches


    Original     		PDF MS-013 10-Pin 5M-1994 MO-229 7N60B equivalent 18N50 equivalent ixgh 1499 MOSFET smd 4407 IXDD 614 C 547 B W57 BJT transistor r1275ns20l R1271ns12C IXYS CS 20-22 MOF1 IXTP 220N04T2

    DIODE 1334

    Abstract: 1334 diode 96N20 36N30P equivalent 88N30 100N25P 36N30 IXTP75N10P IXTP IXTP IXTP IXTP 200N10P-88
    Text: Chip-Shortform2004.pmd PolarHTTM MOSFET, very low RDS on Type VDSS max. RDSon max. Chip type Chip size dimensions 11 Source bond wire recommended Equivalent device data sheet 26.10.2004, 12:44 V mΩ mm mils IXTD 110N055P-5S 55 21 5S 6.20 x 5.20 244 x 205


    Original     		PDF 110N055P-5S 75N10P-5S 110N10P-6S 140N10P-7S 170N10P-8S 200N10P-88 62N15P-5S 96N15P-6S 120N15P-7S 150N15P-8S DIODE 1334 1334 diode 96N20 36N30P equivalent 88N30 100N25P 36N30 IXTP75N10P IXTP IXTP IXTP IXTP