Untitled
Abstract: No abstract text available
Text: 1N4933G - 1N4937G 1.0 AMP. Glass Passivated Fast Recovery Rectifiers DO-41 Features Glass passivated chip junction High efficiency, Low VF High current capability High reliability High surge current capability Low power loss Green compound with suffix "G" on packing
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Original
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PDF
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1N4933G
1N4937G
DO-41
MIL-STD-202,
260/10s
1N493xG
|
Untitled
Abstract: No abstract text available
Text: 1N4933G – 1N4937G 1.0A GLASS PASSIVATED FAST RECOVERY DIODE WON-TOP ELECTRONICS Pb Features Glass Passivated Die Construction Low Forward Voltage Drop High Current Capability High Reliability High Surge Current Capability B A A Mechanical Data
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Original
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PDF
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1N4933G
1N4937G
DO-41,
MIL-STD-202,
DO-41
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1N4937G
Abstract: No abstract text available
Text: 1N4933G thru 1N4937G Taiwan Semiconductor CREAT BY ART FEATURES Glass Passivated Fast Recovery Rectifiers - High efficiency, Low VF - High current capability - High reliability - High surge current capability - Compliant to RoHS Directive 2011/65/EU and in accordance to WEEE 2002/96/EC
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Original
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PDF
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1N4933G
1N4937G
2011/65/EU
2002/96/EC
DO-204AL
DO-41)
JESD22-B102
D1310003
1N4937G
|
Untitled
Abstract: No abstract text available
Text: 1N4933G - 1N4937G 1.0 AMP. Glass Passivated Fast Recovery Rectifiers DO-41 Features Glass passivated chip junction High efficiency, Low VF High current capability High reliability High surge current capability Low power loss Green compound with suffix "G" on packing
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Original
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PDF
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1N4933G
1N4937G
DO-41
MIL-STD-202,
260/10s
1N493xG
|
1N4935G
Abstract: 1N4933G 1N4934G 1N4936G 1N4937G RS-296-E
Text: 1N4933G – 1N4937G WTE POWER SEMICONDUCTORS Pb 1.0A GLASS PASSIVATED FAST RECOVERY DIODE Features ! Glass Passivated Die Construction ! ! ! ! Low Forward Voltage Drop High Current Capability High Reliability High Surge Current Capability A B A Mechanical Data
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Original
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PDF
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1N4933G
1N4937G
DO-41,
MIL-STD-202,
DO-41
1N4935G
1N4933G
1N4934G
1N4936G
1N4937G
RS-296-E
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Untitled
Abstract: No abstract text available
Text: 1N4933G – 1N4937G WTE POWER SEMICONDUCTORS Pb 1.0A GLASS PASSIVATED FAST RECOVERY DIODE Features Glass Passivated Die Construction Low Forward Voltage Drop High Current Capability High Reliability High Surge Current Capability A B A Mechanical Data
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Original
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PDF
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1N4933G
1N4937G
DO-41,
MIL-STD-202,
DO-41
|
Untitled
Abstract: No abstract text available
Text: 1N4933G - 1N4937G 1.0 AMP. Glass Passivated Fast Recovery Rectifiers DO-41 Features Glass passivated chip junction High efficiency, Low VF High current capability High reliability High surge current capability Low power loss Green compound with suffix "G" on packing
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Original
|
PDF
|
1N4933G
1N4937G
DO-41
MIL-STD-202,
1N4933G
|
Untitled
Abstract: No abstract text available
Text: 1N4933G thru 1N4937G Taiwan Semiconductor CREAT BY ART FEATURES Glass Passivated Fast Recovery Rectifiers - High efficiency, Low VF - High current capability - High reliability - High surge current capability - Compliant to RoHS Directive 2011/65/EU and in accordance to WEEE 2002/96/EC
|
Original
|
PDF
|
1N4933G
1N4937G
2011/65/EU
2002/96/EC
DO-204AL
DO-41)
JESD22-B102
D1310003
|
Untitled
Abstract: No abstract text available
Text: 1N4933G - 1N4937G 1.0 AMP. Glass Passivated Fast Recovery Rectifiers DO-41 Features Glass passivated chip junction High efficiency, Low VF High current capability High reliability High surge current capability Low power loss Green compound with suffix "G" on packing
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Original
|
PDF
|
1N4933G
1N4937G
DO-41
MIL-STD-202,
|
Untitled
Abstract: No abstract text available
Text: 1N4933G thru 1N4937G Taiwan Semiconductor CREAT BY ART FEATURES Glass Passivated Fast Recovery Rectifiers - High efficiency, Low VF - High current capability - High reliability - High surge current capability - Compliant to RoHS Directive 2011/65/EU and in accordance to WEEE 2002/96/EC
|
Original
|
PDF
|
1N4933G
1N4937G
2011/65/EU
2002/96/EC
DO-204AL
DO-41)
JESD22-B102
|