S1249
Abstract: S1247
Text: HIGH-SPEED BiCMOS ECL SELF-TIMED STATIC RAM 64K 16Kx 4-BIT STRAM PRELIMINARY INFORMATION IDT 10496RL FEATURES: DESCRIPTION: • 16,384-w ords x 4-bit orga n izatio n • S elf-Tim ed, w ith registers o n inp u ts and latches on o utputs The ID T10496R L is a 65,536-bit h ig h -sp ee d BiC E M O S " ECL
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384-w
13/15ns
10/12ns
10496RL
T10496R
536-bit
400mil)
S12-49
IDT10496RL
S12-50
S1249
S1247
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Untitled
Abstract: No abstract text available
Text: v T C INC 33E » 4% tacnrnorated In co rp orate d FEATURES • Dual Version of VA703 • Low Offset Voltage: 0.5mV • Linearizing Diodes •Wide Open-Loop Bandwidth: 75MHz • Large Output Swing: ±4V with 5V supplies • Large Output Current: +5mA • Adjustable/Gatable Current-Controlled Gain
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VA703
75MHz
VA2703
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TA550
Abstract: RJH 30 E2 smd JSs 75 smd JSs transistor TRANSISTOR SMd jg data "ta550" transistor SMD 6b Y 14U3
Text: V T C INC 9388929 V T C D D 0 0 1 3 ÌS V 99D IN C 01395 V A 2 7 0 3 D T - 7 9 - 0 7 *"2 o DUAL HIGH-SPEED OPERATIONAL TRANSCONDUCTANCE AMPLIFIER WITH LINEARIZING DIODES P R E L IM IN A R Y DESCRIPTION The VA2703 Is a dual high-speed operational transconductance amplifier with the added features of
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VA703
VA2703
TA550
RJH 30 E2
smd JSs 75
smd JSs transistor
TRANSISTOR SMd jg data
"ta550"
transistor SMD 6b Y
14U3
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VA2713
Abstract: Modulation using OTA
Text: V T C INC 33E D ^ V Ty C Incorporated FEATURES • Low Offset Voltage: 0.5mV • Controlled Impedance Push-Pull Buffer • Wide Open Loop Bandwidth: 75MHz OTA, 100MHz Buffer • Large Output Swing: ±3.8V with 5V Supplies • Large Output Current: ±5mA OTA, ±20mA Buffer
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16-Lead
75MHz
100MHz
VA2713
50MHz.
30MHz
30MHz.
150S1
100KHZ
10MHz
Modulation using OTA
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Untitled
Abstract: No abstract text available
Text: CPClare ITC117P CORPORATION ITC117P Integrated Telecom Circuit DESCRIPTION The Integrated Telecom Circuit, Model ITC117P, features the combined circuitry for: • Form A solid state relay for use as a hookswitch ■ Bridge rectifier ■ Darlington transistor
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ITC117P
ITC117P,
ITC117P
120mA
000053b
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sony capstan motor
Abstract: t3bf 6Af amplifier E95831-FP CX20036
Text: SONY CX20036 Capstan Motor Drive For the availability of this product, please contact the "sales offrcg. Description The C X 20036 is a b ip o la r 1C desig ne d fo r the b ru shle ss m otor drive of a 3-phase b id ire ctio n a l c o n d u c tin g s y s te m
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CX20036
CX20036
28PIN
375MIL
OP-28P-L04
OP028-P-0375-D
sony capstan motor
t3bf
6Af amplifier
E95831-FP
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Avantek rf amplifier
Abstract: AVANTEK utc 211 Avantek amplifier 167 Avantek UTC 519
Text: QAVANTEK UTO/UTC/PPA 519 Series Thin-Film Cascadable Amplifier 5 to 500 MHz FEATURES APPLICATIONS • • • • • • • IF/RF Amplification • Surface Mount Assembly Frequency Range: 5 to 500 MHz High Dynamic Range Output P o w er:+19 dBm Typ Noise Figure: 4.4 dB (Typ)
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transistor 30021
Abstract: operational transconductance amplifier BC 104k capacitor U55C TRANSISTOR BC 1366 VA2713J VA2713
Text: V T C INC 33E =1308=12=1 □ □ 0 3 0 = 1 3 D 1 • VTC VA2713 ^P^VTC m_ In c o rp o ra te d DUAL HIGH-SPEED OPERATIONAL TRANSCONDUCTANCE AMPLIFIER WITH LINEARIZING DIODES AND BUFFER -p-TS^q q C O N N E C T IO N D IA G R A M FEATURES • Low Offset Voltage: 0.5mV
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VA2713
75MHz
100MHz
VA2713
30MHz
30MHz.
10KHZ
100KHZ
10MHz
100MHz
transistor 30021
operational transconductance amplifier
BC 104k capacitor
U55C
TRANSISTOR BC 1366
VA2713J
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Untitled
Abstract: No abstract text available
Text: SYNERGY * SEMI CONDUCTOR SYNERGY SEMICONDUCTOR S7E D • «ìGOiafil b3T ■ SY10L494-7/8/10 SY100L494-7/8/10 SY 101L494-7/8/10 LOW POWER 16K x 4 ECL RAM FEATURES OGQOOaa DESCRIPTION ■ Address access time, tAA: 7/8/1 Ons max. ■ Chip select access time, tAc: 3/4/5ns max.
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SY10L494-7/8/10
SY100L494-7/8/10
101L494-7/8/10
-180m
10K/100K/
SY10L/100L/101L494-7PCS
P28-1
F28-1
SY10L/10017101L494-7YCS
SY10L/100L/101L494-7FCS
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G 1009l
Abstract: CY7C1009 CY7C109
Text: fax id: 1047 CY7C109 CY7C1009 CYPRESS 128K x 8 Static RAM Features active HIG H chip enable C E 2 , an active LO W ou tput enable (OE), and three -state drivers. W riting to the device is a cco m plished by takin g chip enable one (CE-|) and w rite enable (WE)
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CY7C109
CY7C1009
CY7C1009
G 1009l
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CY7C1049V33
Abstract: No abstract text available
Text: CY7C1049V33 CYPRESS_ 512K x 8 Static RAM Features sion is provided by an active LOW Chip Enable CE , an active LOW Output Enable (OE), and three-state drivers. Writing to the device is accomplished by taking Chip Enable (CE) and Write Enable (WE) inputs LOW. Data on the eight I/O pins (l/O0
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CY7C1049V33
CY7C1049V33
512Kx
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75176
Abstract: 75ALS175 LTC450 LT 485 t1127a LTI039 LT485
Text: INTERFACE 5V/3.3V Pow ered ¡- 1 Multiple Drivers/Receivers LTi 330 3Dx 5P*| LT1331 ¡3D« 5R«i Lrt542|JD*.5R» LTC1 348 (3D> 5* 3.3V Pow ered RS232 )- 1 Multiple Drivers/Receivers LTi 332 (3D. 5FL-) uses LT1109A LTC1348 ,50< SR« • 5V Powered IrC
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LT1331
rt542
RS232
LT1109A
LTC1348
RS232
LT1181A
LTi281A
LT1381
LTC1383
75176
75ALS175
LTC450
LT 485
t1127a
LTI039
LT485
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Untitled
Abstract: No abstract text available
Text: fax id: 1047 CY7C109 CY7C1009 ^C YPR ESS 128K x 8 Static RAM active HIGH chip enable CE 2 , an active LOW output enable (OE), and three-state drivers. Writing to the device is accom plished by taking chip enable one (CE-|) and write enable (WE) inputs LOW and chip enable two (CE 2 ) input HIGH. Data on
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CY7C109
CY7C1009
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ZL5.6
Abstract: H1311 soj 36 CY7C1049
Text: fax id: 1082 ; ; ; -Hi ' .üÉÉÉÉÉÉÉÉÉÉiüüiüHjjju'.' ; : ; IS. . : : : : : : ; ; ; ; : ; ;' : : : CY7C1049 P R E L IM IN A R Y •rriM U M iM iiiu m m r t V - § « < !N : 5 1 2 K x 8 Static RAM Features is provided by an active LOW chip enable CE , an active LOW
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CY7C1049
CY7C1049
512Kx
ZL5.6
H1311
soj 36
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Untitled
Abstract: No abstract text available
Text: I N T E G R A T E D DEVICE 3flE » m 4Ö2S771 OOOfl'^'i 2 • IDT - C - lA k > - Z Z - b 9 , Integrated Device Technology, Inc. HIGH-SPEED BiCMOS ECL STATIC RAM 4K 1Kx 4-BIT SRAM PRELIMINARY IDT10474 IDT100474 IDT101474 FEATURES: DESCRIPTION: • • •
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2S771
IDT10474
IDT100474
IDT101474
1024-w
IDT10474,
IDT100474,
IDT101474
ECL-10K
ECL-100K
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I000B
Abstract: 41000B-10L 5m41000 41000BP M5M41000
Text: MITSUBISHI LSIs M5M41000BP,J,L,VP,RV-7L,-8L,-10L F A S T PAGE MODE 1 04 8 5 7 6 -B IT 1 0 4 8 5 7 6 -W O R D BY 1-BIT DYNAMIC RAM D ESCRIPTIO N PIN C O N F IG U R A T IO N (TOP VIEW) This is a fa m ily of 1048576-word b y 1-bit d y n a m ic R A M s , fab ricated w ith the high perform ance C M O S process, and
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M5M41000BP
1048576-word
M5M41000BP,
1048S76-BiT
1048S76-W
048576-W
1048576-BIT
I000B
41000B-10L
5m41000
41000BP
M5M41000
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transistor 30021
Abstract: 7907 transistor FUH -29A001B VA703J VA703S operational transconductance amplifier 1380D 8002f hd 104k CAPACITORS K235
Text: V T 9388929 C INC TTD D | c1 3 â f l li 5 cl l 3 ü ü l 3 7 5 1 | 9 9D V T C INC 01375 D T - 7 9 - Ö 7 - VA703 HIGH-SPEED OPERATIONAL TRANSCONDUCTANCE AMPLIFIER WITH LINEARIZING DIODES P R E LIM IN A R Y CONNECTION DIAGRAMS Dual In-Llne/SOIC Package FEATURES
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GGG1375
VA703
T-71-Ã
75MHz
VA703
-10uf
transistor 30021
7907 transistor
FUH -29A001B
VA703J
VA703S
operational transconductance amplifier
1380D
8002f
hd 104k CAPACITORS
K235
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Untitled
Abstract: No abstract text available
Text: ATV2500B I Features • High Performance, High Density Programmable Logic Device Typical 7 ns Pin-to-Pin Delay Fully Connected Logic Array With 416 Product Terms Flexible Output Macrocell 46 Flip-Flops - Two per Macrocell 72 Sum Terms All FHp-Flops, I/O Pins Feed In Independently
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ATV2500B
ATV250QBQ
ATV2500BL
ATV2500BQL
ATV2500B
ATV2500H/L
Military/883C
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sw 2604 ic schematic
Abstract: No abstract text available
Text: AN AL OG D E V I C E S INC S1E D AN ALO G D EVICES □ FEATURES • • • • • • • • • • * * Program m able S u p p ly C u rre n t. 500nA to 400|xA Sin gle S u p p ly O p e ra tio n . +3V to +30V Dual S u p p ly O p e ra tio n . ±1.5V to +15V
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500nA
115dB
800V/mV
sw 2604 ic schematic
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LZL -60-C
Abstract: Sony ICX205AL ivo 9140 ICX205AL sony kv LSH20 mt 1392 8e01 SONY 171 V32B
Text: SONY ICX205AL IC X 205A L i, * f^ 8 m m y ? 7 ( 1 /2 Ü Í ^ J 1 4 5 ^ ^ > M C C D @ fë itiii? ï^ 4 to ¿ 0, ^)l/7.5^>-e ä fc, iÌ jì È Kÿ 7 h -t — K i 30 f r a me / s e c ^ ^ jS ñ T fb ^ l-o '7 L, -F > Ä - Ä ^ v t y ? Í S L ‘Ü 7 A ':7 V'
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ICX205AL
ICX205AL
fcifclQ24TV*
J2567
30frame/sec)
318MHz
X1050
Jl50OTf^
X1040
X1024
LZL -60-C
Sony ICX205AL
ivo 9140
sony kv
LSH20
mt 1392
8e01
SONY 171
V32B
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Untitled
Abstract: No abstract text available
Text: IBM11M2720L 2M X 72 DRAM MODULE Features • 168 Pin JEDEC Standard, 8 Byte Dual In-line Memory Module • System Performance Benefits: - • 2Mx72 Fast Page Mode DIMM • Performance: -60 -70 tRAC ftA S Access Time 60ns 70ns ICAC CAS Access Time 20ns 25ns
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IBM11M2720L
2Mx72
110ns
130ns
64G3443
MMDL07DSU-00
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Untitled
Abstract: No abstract text available
Text: ATV5000/L Features • • • • • • Advanced Programmable Logic Device - High Gate Utilization Flexible Interconnect Architecture - Universal Routing Flexible Logic Cells -128 Flip-Flops and 52 Latches Multiple Flip-Flop Types - Synchronous or Asynchronous Registers
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ATV5000/L
ATV5000L-30JC
ATV5000L-30KC
ATV5000L-30UC
ATV5000L-35JC
ATV5000L-35KC
ATV5000L-35UC
ATV5000L-35KI
A7V5000L-35UI
ATV5000L-35KM
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Untitled
Abstract: No abstract text available
Text: S IC L 7136, IC L 7 1 3 7 3 1/2 Digit LCD/LED, Low Power Display, A/D Converters with Overrange Recovery August 1997 Description Features • • • • • • • • • • • First Reading Overrange Recovery in One Conversion Period Guaranteed Zero Reading for OV Input on All Scales
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ICL7136
ICL7137
15nVp
ICL7126,
ICL7136,
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ESS 9018
Abstract: L7136 Z662 L7126
Text: ICL7136, ICL7137 33 3 1/2 Digit LCD/LED, Low Power Display, A/D Converters with Overrange Recovery D e cem b er 1997 Features Description • First Reading Overrange Recovery in One Conversion Period • Guaranteed Zero Reading for OV Input on All Scales • True Polarity at Zero for Precise Null Detection
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ICL7136,
ICL7137
L7136
L7137
10jaV,
1-800-4-HARRIS
ESS 9018
Z662
L7126
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