1N6377
Abstract: 1N6373 1N6381 1N6382 1N6385 1N6389 ICTE15C MPTE-45 ICTE-12 equivalent MPTE-15
Text: MDE Semiconductor, Inc. 78-150 Calle Tampico, Unit 210, La Quinta, CA., USA 92253 Tel : 760-564-8656 • Fax : 760-564-2414 1-800-831-4881 Email: [email protected] Web: www.mdesemiconductor.com ICTE5.0 to ICTE15C MPTE-5 to MPTE-45 1N6373 to 1N6381 and 1N6382 to 1N6389
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ICTE15C
MPTE-45
1N6373
1N6381
1N6382
1N6389
ICTE-10C
ICTE-12C
ICTE-15C
ICTE-18C
1N6377
1N6385
1N6389
MPTE-45
ICTE-12 equivalent
MPTE-15
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1N6389
Abstract: 1N6373 1N6381 1N6382 1N6383 1N6384 ICTE-10C ICTE-36C MPTE-45C
Text: 1N6382 - 1N6389 Series ICTE-10C - ICTE-36C, MPTE-8C - MPTE-45C 1500 Watt Peak Power Mosorb Zener Transient Voltage Suppressors http://onsemi.com Bidirectional* Mosorb devices are designed to protect voltage sensitive components from high voltage, high–energy transients. They have
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1N6382
1N6389
ICTE-10C
ICTE-36C,
MPTE-45C)
r14525
1N6382/D
1N6373
1N6381
1N6383
1N6384
ICTE-36C
MPTE-45C
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Untitled
Abstract: No abstract text available
Text: 1N6373 thru 1N6389 or MPTE-5 thru MPTE-45C 1500 WATT LOW CLAMPING FACTOR TRANSIENT VOLTAGE SUPPRESSOR SCOTTSDALE DIVISION APPEARANCE This Transient Voltage Suppressor TVS series for 1N6373 thru 1N6389 are JEDEC registered selections for both unidirectional and bidirectional
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1N6373
1N6389
MPTE-45C
1N6381
1N6382
IEC61000-4-5
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TVS 36C
Abstract: diode zener 22c MPTE-45 ICTE 1N6373 1N6381 1N6382 1N6383 1N6384 1N6389
Text: 1N6382 - 1N6389 Series ICTE-10C - ICTE-36C, MPTE-8C - MPTE-45C 1500 Watt Peak Power Mosorb Zener Transient Voltage Suppressors http://onsemi.com Bidirectional* Mosorb devices are designed to protect voltage sensitive components from high voltage, high–energy transients. They have
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1N6382
1N6389
ICTE-10C
ICTE-36C,
MPTE-45C)
r14525
1N6382/D
TVS 36C
diode zener 22c
MPTE-45
ICTE
1N6373
1N6381
1N6383
1N6384
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1N6373
Abstract: 1N6381 1N6382 1N6383 1N6384 1N6389 ICTE-10C ICTE-36C MPTE-45C
Text: 1N6382 - 1N6389 Series ICTE-10C - ICTE-36C, MPTE-8C - MPTE-45C 1500 Watt Peak Power Mosorb Zener Transient Voltage Suppressors http://onsemi.com Bidirectional* Mosorb devices are designed to protect voltage sensitive components from high voltage, high–energy transients. They have
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1N6382
1N6389
ICTE-10C
ICTE-36C,
MPTE-45C)
r14525
1N6382/D
1N6373
1N6381
1N6383
1N6384
ICTE-36C
MPTE-45C
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"Transient Voltage Suppressor"
Abstract: diode 1n6376 1N6373 MPTE-45 IEC61000-4-5 MPTE-5 1N6373 SMCJ6389 1N6381 1N6382 1N6389
Text: 1N6373 thru 1N6389, e3 or MPTE-5 thru MPTE-45C, e3 1500 WATT LOW CLAMPING FACTOR TRANSIENT VOLTAGE SUPPRESSOR SCOTTSDALE DIVISION APPEARANCE This Transient Voltage Suppressor TVS series for 1N6373 thru 1N6389 are JEDEC registered selections for both unidirectional and bidirectional
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1N6373
1N6389,
MPTE-45C,
1N6389
1N6381
1N6382
1N6389
IEC61000-4-5
"Transient Voltage Suppressor"
diode 1n6376
MPTE-45
IEC61000-4-5
MPTE-5 1N6373
SMCJ6389
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Untitled
Abstract: No abstract text available
Text: DIGITRON SEMICONDUCTORS 1N6373 – 1N6389 1500 WATT LOW CLAMPING FACTOR TRANSIENT VOLTAGE SUPPRESSOR • Unidirectional and bidirectional TVS series for thru-hole mounting • Suppresses transients up to 1500 watts @ 10/1000 s • tclamping 0 volts to V(BR min):
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1N6373
1N6389
DO-201
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1.5KE 20A 1N6278A
Abstract: KE-25 1.5KE62A Motorola N5908 I.5KE 1N6373 1N6374 1N6382 KE250 KE91A
Text: Order this data sheet by 1N5908/D MOTOROLA SEMICONDUCTOR \ TECHNICAL DATA 1 N5908 1N6373/lCTE-5 MPTE-5 thru 1N6389/lCTE:~.,C Zener Transient Voltage Suppressors Unidirectional and Bidirectional Mosorb devices are designed to protect voltage sensitive components from high voltage, high
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1N5908/D
N5908
1N6373/lCTE-5
1N6389/lCTE:
MK145BP,
1.5KE 20A 1N6278A
KE-25
1.5KE62A Motorola
N5908
I.5KE
1N6373
1N6374
1N6382
KE250
KE91A
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Untitled
Abstract: No abstract text available
Text: 1N6382 − 1N6389 Series ICTE−10C − ICTE−36C, MPTE−8C − MPTE−45C 1500 Watt Peak Power Mosorb Zener Transient Voltage Suppressors http://onsemi.com Bidirectional* Mosorb devices are designed to protect voltage sensitive components from high voltage, high−energy transients. They have
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1N6382
1N6389
1N6382/D
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Untitled
Abstract: No abstract text available
Text: 1N6373 thru 1N6389 MPTE-5 thru MPTE-45C Transient Voltage Suppressor Breakdown Voltage 5.0 to 45 Volts Peak Pulse Power 1500 Watts Features CASE: DO-201AD DO-27 Breakdown Voltages (VBR) from 5.0 to 45V 1500W peak pulse power capability with a 10/1000 s
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1N6373
1N6389
MPTE-45C
DO-201AD
DO-27)
MPT-45
MPT-36
MPT-22
MPT-18
MPT-15
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1N6373
Abstract: 1N6381 1N6382 1N6385 1N6389 ICTE15C MPTE-45
Text: MDE Semiconductor, Inc. 78-150 Calle Tampico, Unit 210, La Quinta, CA. U.S.A. 92253 Tel: 760-564-8656 • Fax: 760-564-2414 ICTE5.0 to ICTE15C MPTE-5 to MPTE-45 1N6373 to 1N6381 and 1N6382 to 1N6389 GLASS PASSIVATED JUNCTION TRANSIENT VOLTAGE SUPPRESSOR STANDOFF VOLTAGE- 5.0 to 45.0V
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ICTE15C
MPTE-45
1N6373
1N6381
1N6382
1N6389
ICTE-10C
ICTE-12C
ICTE-15C
ICTE-18C
1N6385
1N6389
MPTE-45
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1N6373
Abstract: SMCJ6389 1N6381 1N6382 1N6389 IEC61000-4-4 MPTE-45C
Text: 1N6373 thru 1N6389, e3 or MPTE-5 thru MPTE-45C, e3 1500 WATT LOW CLAMPING FACTOR TRANSIENT VOLTAGE SUPPRESSOR SCOTTSDALE DIVISION APPEARANCE This Transient Voltage Suppressor TVS series for 1N6373 thru 1N6389 are JEDEC registered selections for both unidirectional and bidirectional
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1N6373
1N6389,
MPTE-45C,
1N6389
1N6381
1N6382
1N6389
IEC61000-4-5
SMCJ6389
IEC61000-4-4
MPTE-45C
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Abstract: No abstract text available
Text: 1N6389 Diodes Bidirectional Transient Suppressor Military/High-RelN Minimum Operating Temp øC -65 Maximum Operating Temp (øC)175õ V(BR) Nom.(V)Rev.Break.Voltage53 @I(R) (A) (Test Condition)1m V(RWM) (V) Work.Pk.Rev.Voltage45 I(PPM) Max.(A)Pk.Pulse Current19
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1N6389
Voltage53
Voltage45
Current19
Voltage70
StyleAxial-10
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MC68B21CP
Abstract: xcm916x1cth16 transistor marking code 12W SOT-23 sg379 MC68B54P XC68HC805P18CDW mc68b50cp MC2830 NE555N CHN NE555N
Text: SG379/D REV 7 Semiconductor Products Sector NORTH AMERICA SALES AND DISTRIBUTION PRICE LIST THIS BOOK IS IN COMPUTER SORT PRODUCT CLASSIFICATION – Please see General Information Section 1.3 EFFECTIVE DATE: JANUARY 10, 1998 General Information 1 Cross References
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SG379/D
1N965BRL
ZEN15V
1N751AS
1N967BRL
ZEN18V
1N751ASRL
1N968BRL
ZEN20V
MC68B21CP
xcm916x1cth16
transistor marking code 12W SOT-23
sg379
MC68B54P
XC68HC805P18CDW
mc68b50cp
MC2830
NE555N
CHN NE555N
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BYD74G
Abstract: FUR460 diode tfk 18db6a diode cross reference FAGOR SM6T33CA BZY97C tfk 240 1SMZG06GP D4SB80Z
Text: Cross Reference Every care has been taken in compiling this cross reference list which is published in good faith to assist engineers. Readers are reminded that this list is intended for guidance only. FAGOR ELECTRÓNICA can not be held responsible for any
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5KA10
5KA10A
5KA11
5KA11A
5KA12
5KA12A
5KA13
5KA13A
5KA15
5KA15A
BYD74G
FUR460
diode tfk
18db6a
diode cross reference
FAGOR SM6T33CA
BZY97C
tfk 240
1SMZG06GP
D4SB80Z
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1N623
Abstract: 1N6377 1N6281A 1N6284 1N6269A MPTE-15 1N6267 1N6267A 1N6273 1N6383
Text: MDE Semiconductor, Inc. 78-150 Calle Tampico, Unit 210, La Quinta, CA. U.S.A. 92253 Tel: 760-564-8656 Fax: 760-564-2414 1-800-831-4881 Email: [email protected] Web: www.mdesemiconductor.com JEDEC AND INDUSTRY STANDARD DEVICES MANUFACTURED JEDEC JEDEC
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1N6267
1N6267A
1N6268
1N6268A
1N6269
1N6269A
1N6270
1N6270A
1N6271
1N6271A
1N623
1N6377
1N6281A
1N6284
1N6269A
MPTE-15
1N6267
1N6267A
1N6273
1N6383
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E223026
Abstract: SMD BR 17
Text: MDE Semiconductor, Inc. Single Minded Focus on Surge Suppression Solutions October 28, 2005 To whom it may concern: Product Description: Transient Voltage Suppressors TVS Diodes Manufacture / Vendor: MDE Semiconductor, Inc. LEAD FREE COMPONENTS 1. Axial lead Device: Plating component is 100% Sn, meeting the lead free standards.
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2002/95/EC
P-600
30KP30A
30KP288A
30KW30A
30KW288A
30KPA30A
30KPA288A
E223026
SMD BR 17
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transistor mosfet buv18a
Abstract: M143206EVK MMBF4856 lm358 IC 68hc05sc24 telephone line interface circuit bc517 MC68B54 XC68HC705P9 MPX100ap BUV18A
Text: Device Index and Subject Index In Brief . . . Page Device Index . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7.1–1 General Index . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7.2–1 Subject Index . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7.2–9
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Untitled
Abstract: No abstract text available
Text: 1N6373 thru 1N6389 I n ter n a tio n a l S e m ic o n d u c to r , I n c . TRANSIENT VOLTAGE SUPPRESSORS FOR MICROPROCESSOR PROTECTION 5.0 to 45 VOLTS 1500 WATT PEAK POWER 5.0 WATT STEADY STATE 1N5908 MAXIMUM RATINGS AND CHARACTERISTICS Ratings at 25 °C am bient unless otherwise specified
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1N6373
1N6389
1N5908
TDDD37fl
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IN6303
Abstract: l1303 cl1304 IN6303A MCL1300
Text: 1N6267,A thru IN6303,A 1N6373 thru 1N6389 ICTE-5.C thru ICTt-45,C See Page 6-74 MOTOROLA g CURRENT LIMITING DIODES Field-effect current lim iting diodes designed for applications re quiring a current reference or a constant current over a specified voltage range.
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1N6267
IN6303
1N6373
1N6389
ICTt-45
MCL1300
MCL1304
l1303
cl1304
IN6303A
MCL1300
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KE200A
Abstract: 1N590B 5ke200 1cte-5 5KE82 5KE56 5KE51 1N6267 1N6277/90-E3
Text: M 1N5908 1N6373/ICTE-5, C MPTE-5, C M O T O R O L A thru 1N6389/ICTE-45, C M PTE-45, C 1N6267, A/1.5KE6.8, A thru ZENER OVERVOLTAGE TRANSIEN T SUPPRESSOR 1N6303, A/1.5KE200, A M osorb devices are designed to protect voltage sen sitive compon entsfro m high voltage, high en ergy transients They have excellent
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1N5908
1N6373/ICTE-5,
1N6389/ICTE-45,
PTE-45,
1N6267,
KE200A
1N590B
5ke200
1cte-5
5KE82
5KE56
5KE51
1N6267
1N6277/90-E3
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Untitled
Abstract: No abstract text available
Text: MPTE/1N6373-1N6389 SERIES 01.O16±O5 MPTE Series 1500 WATT AXIAL TRANSIENT VOLTAGE SUPPRESSORS The MPTE series 1500 W tra n s ie n t s u p p re s s o rs are d e s ig n e d s p e c ific a lly fo r the p ro te ctio n o f C M O S, NM O S, BiM O S, a n d o th e r in te rg ra te d c irc u its a v a ila b le
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MPTE/1N6373-1N6389
MP7E/1N6373-1N6389
50mVp-p
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Untitled
Abstract: No abstract text available
Text: MPTE/1 N6 3 7 3 - 1 N 6 3 8 9 series MPTE SERIES 1500 WATT AXIAL TRANSIENT VOLTAGE SUPPRESSORS 01.016*0.050 The MPTE series 1500 W transient suppressors are designed specifically for the protection of CMOS, NMOS. BiMOS, and other intergrated circuits available today for TTL,
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1000/j
Vslgss50mVpH>
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Untitled
Abstract: No abstract text available
Text: T ra n s ie n t V o lta ge S u p p re s s io n TV S D io d e s P T E / 1 N 6 3 7 3 ~~ 1N63^ O Y O Q M Control over power 01.O16±O.O5O im s ib ie Prolection FEATURES When no problems exist, Oydom TVS • Qass passivated junction Diodes are totally invisible to the circuits
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1-619-71S7280
1500pcs)
MPTE995-5000
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