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MDE Semiconductor Inc 1N6373 TVS DIODE UP 5VRWM 7.5VC
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onsemi 1N6373 TVS DIODE 5VWM 9.4VC AXIAL
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Littelfuse Inc 1N6373G TVS DIODE 5VWM 9.4VC AXIAL
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onsemi 1N6373RL4 TVS DIODE 5V 9.4V AXIAL
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Quest Components	1N6373RL4		20			1 $1.45 10 $1.16 100 $0.87 1000 $0.87 10000 $0.87	Buy Now
Central Semiconductor Corp 1N6373-TR TVS DIODE 5VWM 7.5VC DO201
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1N6373 Datasheets (32)

Part	Manufacturer	Description	Datasheet Type	PDF
1N6373	General Semiconductor	TRANSIENT VOLTAGE SUPPRESSOR	Original	PDF
1N6373	General Semiconductor	TRANSZORB TRANSIENT VOLTAGE SUPPRESSOR	Original	PDF
1N6373	MDE Semiconductor	5.00V 160A 1500W peak pulse power glass passivated junction transient voltage suppressor	Original	PDF
1N6373	Microsemi	Transient Voltage Suppressor	Original	PDF
1N6373	Motorola	Zener Transient Voltage Suppressors Unidirectional and Bidirectional	Original	PDF
1N6373	On Semiconductor	1500 Watt Peak Power Mosorb TM Zener Transient Voltage Suppressors	Original	PDF
1N6373	On Semiconductor	1N6373 - DIODE 1500 W, UNIDIRECTIONAL, SILICON, TVS DIODE, PLASTIC, MOSORB, CASE 41A-04, 2 PIN, Transient Suppressor	Original	PDF
1N6373	Vishay Semiconductors	TRANSZORB Transient Voltage Suppressors	Original	PDF
1N6373	Central Semiconductor		Scan	PDF
1N6373	International Semiconductor	TRANSIENT VOLTAGE SUPPRESSOR	Scan	PDF
1N6373	Motorola	Switchmode Datasheet	Scan	PDF
1N6373	Motorola	European Master Selection Guide 1986	Scan	PDF
1N6373	Unknown	Historical semiconductor price guide (US$ - 1998). From our catalog scanning project.	Historical	PDF
1N6373	Unknown	Shortform IC and Component Datasheets (Plus Cross Reference Data)	Short Form	PDF

1N6373	Unknown	Shortform Data and Cross References (Misc Datasheets)	Short Form	PDF
1N6373A	Motorola	Zener Transient Voltage Suppressors Unidirectional and Bidirectional	Original	PDF
1N6373-D	On Semiconductor	1500 Watt Peak Power Mosorb TM Zener Transient Vol	Original	PDF
1N6373-E3/51	Vishay General Semiconductor	TVS - Diodes, Circuit Protection, TVS DIODE 5VWM 7.5VC 1.5KE	Original	PDF
1N6373-E3/54	Vishay General Semiconductor	TVS - Diodes, Circuit Protection, TVS DIODE 5VWM 7.5VC 1.5KE	Original	PDF
1N6373-E3/73	Vishay General Semiconductor	TVS - Diodes, Circuit Protection, TVS DIODE 5VWM 7.5VC 1.5KE	Original	PDF

1N6373 Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
Untitled Abstract: No abstract text available Text: ICTE5 thru ICTE18C, 1N6373 thru 1N6386 Vishay General Semiconductor TRANSZORB Transient Voltage Suppressors FEATURES • Glass passivated chip junction • Available in uni-directional and bi-directional • 1500 W peak pulse power capability with a 10/1000 s waveform, repetitive	Original	PDF	ICTE18C, 1N6373 1N6386 22-B106 AEC-Q101 2002/95/EC 2002/96/EC 2011/65/EU 2002/95/EC.
1N6377 Abstract: 1N6373 1N6381 1N6382 1N6385 1N6389 ICTE15C MPTE-45 ICTE-12 equivalent MPTE-15 Text: MDE Semiconductor, Inc. 78-150 Calle Tampico, Unit 210, La Quinta, CA., USA 92253 Tel : 760-564-8656 • Fax : 760-564-2414 1-800-831-4881 Email: [email protected] Web: www.mdesemiconductor.com ICTE5.0 to ICTE15C MPTE-5 to MPTE-45 1N6373 to 1N6381 and 1N6382 to 1N6389	Original	PDF	ICTE15C MPTE-45 1N6373 1N6381 1N6382 1N6389 ICTE-10C ICTE-12C ICTE-15C ICTE-18C 1N6377 1N6385 1N6389 MPTE-45 ICTE-12 equivalent MPTE-15
Untitled Abstract: No abstract text available Text: ICTE5.0 thru ICTE18C 1N6373 thru 1N6386 Vishay General Semiconductor TRANSZORB Transient Voltage Suppressors Major Ratings and Characteristics VWM 5.0 V to 18 V PPPM 1500 W PD 6.5 W IFSM 200 A Tj max. 175 °C Case Style 1.5KE Features Mechanical Data • Glass passivated chip junction	Original	PDF	ICTE18C 1N6373 1N6386 2002/95/EC 2002/96/EC 08-Apr-05
icte-5rlg Abstract: 12RL 1N6373 1N6374 1N6375 1N6376 1N6377 1N6380 1N6381 ICTE-36 Text: 1N6373 - 1N6381 Series ICTE-5 - ICTE-36 1500 Watt Peak Power Mosorbt Zener Transient Voltage Suppressors http://onsemi.com Unidirectional* Mosorb devices are designed to protect voltage sensitive components from high voltage, high-energy transients. They have	Original	PDF	1N6373 1N6381 ICTE-36) 1N6373/D icte-5rlg 12RL 1N6374 1N6375 1N6376 1N6377 1N6380 ICTE-36
88356 Abstract: 1N6373 1N6374 1N6386 ICTE18C ICTE-18C JESD22-B102 J-STD-002 Text: ICTE5.0 thru ICTE18C, 1N6373 thru 1N6386 Vishay General Semiconductor TRANSZORB Transient Voltage Suppressors FEATURES • Glass passivated chip junction • Available in uni-directional and bi-directional • 1500 W peak pulse power capability with a 10/1000 µs waveform, repetitive rate duty	Original	PDF	ICTE18C, 1N6373 1N6386 2002/95/EC 2002/96/EC 18-Jul-08 88356 1N6374 1N6386 ICTE18C ICTE-18C JESD22-B102 J-STD-002
Untitled Abstract: No abstract text available Text: 1N6373 thru 1N6389 or MPTE-5 thru MPTE-45C 1500 WATT LOW CLAMPING FACTOR TRANSIENT VOLTAGE SUPPRESSOR SCOTTSDALE DIVISION APPEARANCE This Transient Voltage Suppressor TVS series for 1N6373 thru 1N6389 are JEDEC registered selections for both unidirectional and bidirectional	Original	PDF	1N6373 1N6389 MPTE-45C 1N6381 1N6382 IEC61000-4-5
1N6373 Abstract: 1N6374 1N6375 1N6376 1N6381 1N6382 1N6389 ICTE-36 MPTE-45 Text: 1N6373 - 1N6381 Series ICTE-5 - ICTE-36, MPTE-5 - MPTE-45 1500 Watt Peak Power Mosorb Zener Transient Voltage Suppressors http://onsemi.com Unidirectional* Mosorb devices are designed to protect voltage sensitive components from high voltage, high–energy transients. They have	Original	PDF	1N6373 1N6381 ICTE-36, MPTE-45) r14525 1N6373/D 1N6374 1N6375 1N6376 1N6382 1N6389 ICTE-36 MPTE-45
UJT 2N2646 specification Abstract: GE Transient Voltage Suppression Manual Triac motor speed control UJT-2N2646 PIN DIAGRAM DETAILS marking dp U1 sot363 UJT pin identification TO-220 MOS UJT 2N2646 DO41 PACKAGE diode marking S6 sine wave UPS inverter circuit diagram Text: 1N6373 - 1N6381 Series ICTE-5 - ICTE-36, MPTE-5 - MPTE-45 1500 Watt Peak Power Mosorb Zener Transient Voltage Suppressors http://onsemi.com Unidirectional* Mosorb devices are designed to protect voltage sensitive components from high voltage, high–energy transients. They have	Original	PDF	1N6373 1N6381 ICTE-36, MPTE-45) UJT 2N2646 specification GE Transient Voltage Suppression Manual Triac motor speed control UJT-2N2646 PIN DIAGRAM DETAILS marking dp U1 sot363 UJT pin identification TO-220 MOS UJT 2N2646 DO41 PACKAGE diode marking S6 sine wave UPS inverter circuit diagram
"Transient Voltage Suppressor" Abstract: diode 1n6376 1N6373 MPTE-45 IEC61000-4-5 MPTE-5 1N6373 SMCJ6389 1N6381 1N6382 1N6389 Text: 1N6373 thru 1N6389, e3 or MPTE-5 thru MPTE-45C, e3 1500 WATT LOW CLAMPING FACTOR TRANSIENT VOLTAGE SUPPRESSOR SCOTTSDALE DIVISION APPEARANCE This Transient Voltage Suppressor TVS series for 1N6373 thru 1N6389 are JEDEC registered selections for both unidirectional and bidirectional	Original	PDF	1N6373 1N6389, MPTE-45C, 1N6389 1N6381 1N6382 1N6389 IEC61000-4-5 "Transient Voltage Suppressor" diode 1n6376 MPTE-45 IEC61000-4-5 MPTE-5 1N6373 SMCJ6389
Untitled Abstract: No abstract text available Text: DIGITRON SEMICONDUCTORS 1N6373 – 1N6389 1500 WATT LOW CLAMPING FACTOR TRANSIENT VOLTAGE SUPPRESSOR • Unidirectional and bidirectional TVS series for thru-hole mounting • Suppresses transients up to 1500 watts @ 10/1000 s • tclamping 0 volts to V(BR min):	Original	PDF	1N6373 1N6389 DO-201
ICTE-5 Abstract: No abstract text available Text: 1N6373 - 1N6381 Series ICTE-5 - ICTE-36, MPTE-5 - MPTE-45 1500 Watt Peak Power Mosorb Zener Transient Voltage Suppressors http://onsemi.com Unidirectional* Mosorb devices are designed to protect voltage sensitive components from high voltage, high−energy transients. They have	Original	PDF	1N6373 1N6381 ICTE-36, MPTE-45) ICTE-5
1N6373 Abstract: 1N6376 1N6374 1N6375 1N6377 1N6381 1N6382 1N6389 Text: 1N6373 − 1N6381 Series ICTE−5 − ICTE−36, MPTE−5 − MPTE−45 1500 Watt Peak Power Mosorbt Zener Transient Voltage Suppressors Unidirectional* http://onsemi.com Cathode Mosorb devices are designed to protect voltage sensitive components from high voltage, high−energy transients. They have	Original	PDF	1N6373 1N6381 ICTE-36, MPTE-45) 1N6373/D 1N6376 1N6374 1N6375 1N6377 1N6382 1N6389
1.5KE 20A 1N6278A Abstract: KE-25 1.5KE62A Motorola N5908 I.5KE 1N6373 1N6374 1N6382 KE250 KE91A Text: Order this data sheet by 1N5908/D MOTOROLA SEMICONDUCTOR \ TECHNICAL DATA 1 N5908 1N6373/lCTE-5 MPTE-5 thru 1N6389/lCTE:~.,C Zener Transient Voltage Suppressors Unidirectional and Bidirectional Mosorb devices are designed to protect voltage sensitive components from high voltage, high	Original	PDF	1N5908/D N5908 1N6373/lCTE-5 1N6389/lCTE: MK145BP, 1.5KE 20A 1N6278A KE-25 1.5KE62A Motorola N5908 I.5KE 1N6373 1N6374 1N6382 KE250 KE91A
Untitled Abstract: No abstract text available Text: Enabling Energy Efficient Solutions Product Overview Created on: 10/26/2011 1N6373: 1500 Watt MOSORB Transient Voltage Suppressor, 6.0 V Unidir For complete documentation, see the data sheet Product Description Mosorb devices are designed to protect voltage sensitive components from high volt-age, high energy transients. They have	Original	PDF	1N6373: 1N6373G 1N6373RL4G

1N6373 Abstract: 1N6374 1N6386 ICTE18C J-STD-002 Text: ICTE5 thru ICTE18C, 1N6373 thru 1N6386 Vishay General Semiconductor TRANSZORB Transient Voltage Suppressors FEATURES • Glass passivated chip junction • Available in uni-directional and bi-directional • 1500 W peak pulse power capability with a 10/1000 s waveform, repetitive	Original	PDF	ICTE18C, 1N6373 1N6386 22-B106 AEC-Q101 2002/95/EC 2002/96/EC 150lectual 18-Jul-08 1N6374 1N6386 ICTE18C J-STD-002
88356 Abstract: 1N6373 1N6374 1N6386 ICTE18C ICTE-18C JESD22-B102 J-STD-002 Text: ICTE5.0 thru ICTE18C, 1N6373 thru 1N6386 Vishay General Semiconductor TRANSZORB Transient Voltage Suppressors FEATURES • Glass passivated chip junction • Available in uni-directional and bi-directional • 1500 W peak pulse power capability with a 10/1000 µs waveform, repetitive rate duty	Original	PDF	ICTE18C, 1N6373 1N6386 2002/95/EC 2002/96/EC 18-Jul-08 88356 1N6374 1N6386 ICTE18C ICTE-18C JESD22-B102 J-STD-002
1N6373 Abstract: 1N6374 1N6386 ICTE18C J-STD-002 Text: ICTE5 thru ICTE18C, 1N6373 thru 1N6386 Vishay General Semiconductor TRANSZORB Transient Voltage Suppressors FEATURES • Glass passivated chip junction • Available in uni-directional and bi-directional • 1500 W peak pulse power capability with a 10/1000 s waveform, repetitive	Original	PDF	ICTE18C, 1N6373 1N6386 22-B106 AEC-Q101 2002/95/EC 2002/96/EC 11-Mar-11 1N6374 1N6386 ICTE18C J-STD-002
1N63xx Abstract: 1N6373 Text: 1N6373 − 1N6381 Series ICTE−5 − ICTE−36, MPTE−5 − MPTE−45 1500 Watt Peak Power Mosorbt Zener Transient Voltage Suppressors Unidirectional* http://onsemi.com Cathode Mosorb devices are designed to protect voltage sensitive components from high voltage, high−energy transients. They have	Original	PDF	1N6373 1N6381 ICTE-36, MPTE-45) 1N6373/D 1N63xx
1N6373 Abstract: 1N6374 ICTE-36 zener 1N6373 1N6375 1N6378 1N6381 1N6382 1N6389 MPTE-45 Text: 1N6373 - 1N6381 Series ICTE-5 - ICTE-36, MPTE-5 - MPTE-45 1500 Watt Peak Power Mosorb Zener Transient Voltage Suppressors http://onsemi.com Unidirectional* Mosorb devices are designed to protect voltage sensitive components from high voltage, high–energy transients. They have	Original	PDF	1N6373 1N6381 ICTE-36, MPTE-45) r14525 1N6373/D 1N6374 ICTE-36 zener 1N6373 1N6375 1N6378 1N6382 1N6389 MPTE-45
Untitled Abstract: No abstract text available Text: ICTE5 thru ICTE18C, 1N6373 thru 1N6386 www.vishay.com Vishay General Semiconductor TRANSZORB Transient Voltage Suppressors FEATURES • Glass passivated chip junction • Available in uni-directional and bi-directional • 1500 W peak pulse power capability with a	Original	PDF	ICTE18C, 1N6373 1N6386 22-B106 AEC-Q101 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A
Untitled Abstract: No abstract text available Text: 1N6373 thru 1N6389 MPTE-5 thru MPTE-45C Transient Voltage Suppressor Breakdown Voltage 5.0 to 45 Volts Peak Pulse Power 1500 Watts Features  CASE: DO-201AD DO-27       Breakdown Voltages (VBR) from 5.0 to 45V 1500W peak pulse power capability with a 10/1000 s	Original	PDF	1N6373 1N6389 MPTE-45C DO-201AD DO-27) MPT-45 MPT-36 MPT-22 MPT-18 MPT-15
Untitled Abstract: No abstract text available Text: 1N6373 thru 1N6389 I n ter n a tio n a l S e m ic o n d u c to r , I n c . TRANSIENT VOLTAGE SUPPRESSORS FOR MICROPROCESSOR PROTECTION 5.0 to 45 VOLTS 1500 WATT PEAK POWER 5.0 WATT STEADY STATE 1N5908 MAXIMUM RATINGS AND CHARACTERISTICS Ratings at 25 °C am bient unless otherwise specified	OCR Scan	PDF	1N6373 1N6389 1N5908 TDDD37fl
in6376 Abstract: IN6377 in6373 IN6378 IN6375 IN6379 IN-6375 lN6373 suppressors 1N6373 Text: 1N6373 THRU 1N6381 +» Central Semiconductor Corp. Central semiconductor Corp. 1.5KW TRANSIENT SUPPRESSOR EPOXY MOLDED AXIAL LEAD CASE 145 A dam s Avenue Hauppauge, New York 11 788 DESCRIPTION The CENTRAL SEMICONDUCTOR 1N6373 Series types are Epoxy Molded Axial Lead Transient	OCR Scan	PDF	1N6373 1N6381 IN6373 1N6374 IN6375 IN6376 IN6377 IN6378 IN6379 IN-6375 lN6373 suppressors
1N6373 Abstract: No abstract text available Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA 1N6373A SERIES 1500 Watt MOSORB GENERAL DATA APPLICABLE TO ALL SERIES IN THIS GROUP 1500 WATT PEAK POWER Zener Transient Voltage Suppressors Unidirectional and Bidirectional Mosorb devices are designed to protect voltage sensitive com ponents from high vo lt	OCR Scan	PDF	1N6373A 1A-02 1N6373

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MDE Semiconductor Inc 1N6373

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onsemi 1N6373RL4

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1N6373 Datasheets (32)

1N6373 Datasheets Context Search

Untitled

1N6377

Untitled

icte-5rlg

88356

Untitled

1N6373

UJT 2N2646 specification

"Transient Voltage Suppressor"

Untitled

ICTE-5

1N6373

1.5KE 20A 1N6278A

Untitled

1N6373

88356

1N6373

1N63xx

1N6373

Untitled

Untitled

Untitled

in6376

1N6373