Untitled
Abstract: No abstract text available
Text: STAC4932B HF/VHF/UHF RF power N-channel MOSFET Datasheet - production data Features • Excellent thermal stability • Common source push-pull configuration • POUT = 1000 W min. 1200 W typ. with 26 dB gain @ 123 MHz • Pulse conditions: 1 msec - 10%
|
Original
|
PDF
|
STAC4932B
2002/95/EC
STAC244B
STAC4932B
DocID17153
|
Untitled
Abstract: No abstract text available
Text: bq20z40-R1 SLUS993A – DECEMBER 2009 – REVISED MARCH 2011 www.ti.com SBS 1.1-COMPLIANT GAS GAUGE ENABLED WITH IMPEDANCE TRACK TECHNOLOGY FOR USE WITH THE bq29330 Check for Samples: bq20z40-R1 FEATURES APPLICATIONS • • • • 1 2 • • • •
|
Original
|
PDF
|
bq20z40-R1
SLUS993A
bq29330
|
zigbee based remote control
Abstract: sony led tv service manual SERVICE MANUAL tv sony ENC-MIC-32 STM32W108 zigbee user manual STM32W108 IAR CODES sony factory codes MB851 remote control with 4 channels RF remote control
Text: UM0909 User manual STM32W108xx ZigBee RF4CE library Introduction This document describes the ST RF4CE library and how to use it to develop RF4CE compliant applications on an STM32W device. The document describes initially the RF4CE protocol as defined by the ZigBee alliance and
|
Original
|
PDF
|
UM0909
STM32W108xx
STM32W
STM32W.
zigbee based remote control
sony led tv service manual
SERVICE MANUAL tv sony
ENC-MIC-32
STM32W108 zigbee user manual
STM32W108 IAR CODES
sony factory codes
MB851
remote control with 4 channels
RF remote control
|
VND5E025BK-E
Abstract: VND5E025BK CDM-AEC-Q100-011 7637-2 12V
Text: VND5E025BK-E Double channel high-side driver with analog current sense for automotive applications Features Max transient supply voltage VCC 41 V Operating voltage range VCC 4.5 to 28 V Max on-state resistance per ch. RON 25 mΩ Current limitation (typ)
|
Original
|
PDF
|
VND5E025BK-E
PowerSSO-24
VND5E025BK-E
VND5E025BK
CDM-AEC-Q100-011
7637-2 12V
|
MEC 1300
Abstract: STAC4932 STAC4932B 1000WF
Text: STAC4932B RF power transistors HF/VHF/UHF N-channel MOSFETs Features • Excellent thermal stability ■ Common source push-pull configuration ■ POUT = 1000 W min. 1200 W typ. with 26 dB gain @ 123 MHz ■ Pulse conditions : 1 msec - 10% ■ In compliance with the 2002/95/EC European
|
Original
|
PDF
|
STAC4932B
2002/95/EC
STAC244B
STAC4932B
MEC 1300
STAC4932
1000WF
|
Untitled
Abstract: No abstract text available
Text: 70 MHz SAW Bandpass Filter 26 MHz bandwidth Part Number SF0070CF51851T TYPICAL PERFORMANCE Horizontal: 10 MHz/div Vertical from top : Magnitude Magnitude Phase Linearity Group Delay Deviation 10 1 8 30 dB/div dB/div deg/div ns/div SPECIFICATION Parameter
|
Original
|
PDF
|
SF0070CF51851T
19-Feb-2010
|
STB18NF25
Abstract: STD18NF25 18NF25
Text: STB18NF25, STD18NF25 N-channel 250 V, 0.14 Ω, 17 A low gate charge STripFET II Power MOSFET in D2PAK and DPAK packages Datasheet — production data Features Type VDSS RDS on max ID PTOT STB18NF25 250 V < 0.165 Ω 17 A 110 W STD18NF25 250 V < 0.165 Ω
|
Original
|
PDF
|
STB18NF25,
STD18NF25
STB18NF25
STD18NF25
18NF25
|
MEC 1300
Abstract: No abstract text available
Text: STAC4932B RF power transistors HF/VHF/UHF N-channel MOSFETs Features • Excellent thermal stability ■ Common source push-pull configuration ■ POUT = 1000 W min. 1200 W typ. with 26 dB gain @ 123 MHz ■ Pulse conditions : 1 msec - 10% ■ In compliance with the 2002/95/EC European
|
Original
|
PDF
|
STAC4932B
2002/95/EC
STAC244B
STAC4932B
STAC4932
MEC 1300
|
GR-1089
Abstract: tm 1621 ETP282
Text: ETP01-xx21 Protection for Ethernet lines Features • Differential and common mode protection ■ Telcordia GR1089 Intrabuilding: 150 A, 2/10 µs ■ ITU-T K20/21: 40 A, 5/310 µs ■ Low capacitance: 13 pF max at 0 V ■ UL94 V0 approved resin ■ SO-8 package is JEDEC registered
|
Original
|
PDF
|
ETP01-xx21
GR1089
K20/21:
UL61950,
UL1459.
GR-1089
tm 1621
ETP282
|
RM0017
Abstract: SPC560B40L3 SPC560B e6384 FlexCAN SPC560B40L3 NEXUS FLASH ERASE FB50X22X spc560b4x
Text: SPC560B4x/50 - SPC560C4x/50 Errata sheet 32-bit MCU family built on the Power Architecture embedded category for automotive body electronics applications Introduction This errata sheet describes all the known functional and electrical limitations of the
|
Original
|
PDF
|
SPC560B4x/50
SPC560C4x/50
32-bit
SPC560C4x/50
RM0017
SPC560Bx
SPC560Cx
FB50X22X
SPC560B40L3
SPC560B
e6384
FlexCAN SPC560B40L3
NEXUS FLASH ERASE
FB50X22X
spc560b4x
|
AN2348
Abstract: emif07 lcd02f3 EMIF07-LCD02F3 Marking STMicroelectronics year digit Z AN1751
Text: EMIF07-LCD02F3 7-line IPAD , EMI filter and ESD protection for LCD and cameras Features • EMI symmetrical I/O low-pass filter ■ High efficiency in EMI filtering ■ Lead-free package ■ Very low PCB space occupation: 1.94 mm x 1.54 mm Flip Chip (18 bumps)
|
Original
|
PDF
|
EMIF07-LCD02F3
AN2348
emif07 lcd02f3
EMIF07-LCD02F3
Marking STMicroelectronics year digit Z
AN1751
|
BQ20Z40-R1
Abstract: No abstract text available
Text: bq20z40-R1 SLUS993A – DECEMBER 2009 – REVISED MARCH 2011 www.ti.com SBS 1.1-COMPLIANT GAS GAUGE ENABLED WITH IMPEDANCE TRACK TECHNOLOGY FOR USE WITH THE bq29330 Check for Samples: bq20z40-R1 FEATURES APPLICATIONS • • • • 1 2 • • • •
|
Original
|
PDF
|
bq20z40-R1
SLUS993A
bq29330
|
Untitled
Abstract: No abstract text available
Text: VND5E025BK-E Double channel high-side driver with analog current sense for automotive applications Features Max transient supply voltage VCC 41 V Operating voltage range VCC 4.5 to 28 V Max on-state resistance per ch. RON 25 mΩ Current limitation (typ)
|
Original
|
PDF
|
VND5E025BK-E
PowerSSO-24
|
Untitled
Abstract: No abstract text available
Text: LY330ALH MEMS motion sensor: high performance ±300 dps analog yaw-rate gyroscope The device includes a sensing element composed of a single driving mass, kept in continuous oscillation and capable of reacting, based on the Coriolis principle, when an angular rate is applied.
|
Original
|
PDF
|
LY330ALH
LGA-10
DocID16568
|
|
Untitled
Abstract: No abstract text available
Text: EMIF07-LCD02F3 7-line IPAD , EMI filter and ESD protection for LCD and cameras Features • EMI symmetrical I/O low-pass filter ■ High efficiency in EMI filtering ■ Lead-free package ■ Very low PCB space occupation: 1.94 mm x 1.54 mm Flip Chip (18 bumps)
|
Original
|
PDF
|
EMIF07-LCD02F3
|
Untitled
Abstract: No abstract text available
Text: STAC4932B HF/VHF/UHF RF power N-channel MOSFET Datasheet - production data Features • Excellent thermal stability • Common source push-pull configuration • POUT = 1000 W min. 1200 W typ. with 26 dB gain @ 123 MHz • Pulse conditions: 1 msec - 10%
|
Original
|
PDF
|
STAC4932B
2002/95/EC
STAC244B
STAC4932B
DocID17153
|
JN-AN-1038
Abstract: ST M25P10
Text: JN51xx Flash Programmer User Guide JN-UG-3007 Revision 2.2 11-Dec-2012 JN51xx Flash Programmer User Guide 2 NXP Laboratories UK 2012 JN-UG-3007 v2.2 JN51xx Flash Programmer User Guide Contents About this Manual 5 1 Introduction 7 2 Using the Flash Programmer GUI
|
Original
|
PDF
|
JN51xx
JN-UG-3007
11-Dec-2012
JN-UG-3007
JN-AN-1038
ST M25P10
|
ST 024
Abstract: tm 1621 diode Marking code A2 ETP01-xx21 ETP162 gigabit pulse transformer MARKING CODE SO-8 MIL grade RJ45 connectors GR-1089 marking 68
Text: ETP01-xx21 Protection for Ethernet lines Features • Differential and common mode protection ■ Telcordia GR1089 Intrabuilding: 150 A, 2/10 µs ■ ITU-T K20/21: 40 A, 5/310 µs ■ Low capacitance: 13 pF max at 0 V ■ UL94 V0 approved resin ■ SO-8 package is JEDEC registered
|
Original
|
PDF
|
ETP01-xx21
GR1089
K20/21:
UL61950,
UL1459.
ST 024
tm 1621
diode Marking code A2
ETP01-xx21
ETP162
gigabit pulse transformer
MARKING CODE SO-8
MIL grade RJ45 connectors
GR-1089
marking 68
|
18NF25
Abstract: STB18NF25 STD18NF25
Text: STB18NF25 STD18NF25 N-channel 250 V, 0.14 Ω, 17 A DPAK, D2PAK low gate charge STripFET II Power MOSFET Features Type VDSS RDS on max ID PTOT STB18NF25 250 V < 0.165 Ω 17 A 110 W STD18NF25 250 V < 0.165 Ω 17 A 110 W 3 • Low gate charge ■ 100% avalanche tested
|
Original
|
PDF
|
STB18NF25
STD18NF25
18NF25
STB18NF25
STD18NF25
|
Untitled
Abstract: No abstract text available
Text: TPA2005D1-Q1 www.ti.com SLOS474C – AUGUST 2005 – REVISED MARCH 2010 1.4-W MONO FILTER-FREE CLASS-D AUDIO POWER AMPLIFIER Check for Samples: TPA2005D1-Q1 FEATURES 1 • • • • Qualified for Automotive Applications 1.4 W Into 8 Ω From a 5-V Supply at
|
Original
|
PDF
|
TPA2005D1-Q1
SLOS474C
250-kHz
|
Untitled
Abstract: No abstract text available
Text: ETP01-xx21 Protection for Ethernet lines Features • Differential and common mode protection ■ Telcordia GR1089 Intrabuilding: 150 A, 2/10 µs ■ ITU-T K20/21: 40 A, 5/310 µs ■ Low capacitance: 13 pF max at 0 V ■ UL94 V0 approved resin ■ SO-8 package is JEDEC registered
|
Original
|
PDF
|
ETP01-xx21
GR1089
K20/21:
UL61950,
UL1459.
|
STAC4932
Abstract: No abstract text available
Text: STAC4932B RF power transistors HF/VHF/UHF N-channel MOSFETs Features • Excellent thermal stability ■ Common source push-pull configuration ■ POUT = 1000 W min. 1200 W typ. with 26 dB gain @ 123 MHz ■ Pulse conditions : 1 msec - 10% ■ In compliance with the 2002/95/EC European
|
Original
|
PDF
|
STAC4932B
2002/95/EC
STAC244B
STAC4932B
STAC4932
|
Untitled
Abstract: No abstract text available
Text: THIS DRAWING IS UNPUBLISHED. GP COPYRIGHT - 6 7 8 RELEASED FOR PUBLICATION BY TYCO ELECTRONICS CORPORATION. 5 3 2 - ALL INTERNATIONAL RIGHTS RESERVED. LOC DIST GP 00 R E V IS IO N S P ELECTRICAL PROPERTIES CURRENT RATING 1 AMP INSULATION RESISTANCE > 5 x 1 0 9 OHMS @ 500 VDC
|
OCR Scan
|
PDF
|
19FEB2010
|
Untitled
Abstract: No abstract text available
Text: THIS DRAWING IS UNPUBLISHED. G V COPYRIGHT - 6 7 8 RELEASED FOR PUBLICATION BY TYCO ELECTRONICS CORPORATION. 5 4 2 3 - LOC ALL INTERNATIONAL RIGHTS RESERVED. REVISIONS DIST GP 00 P ELECTRICAL PROPERTIES CURRENT RATING 1 AMP INSULATION RESISTANCE > 5 x 1 0 9 OHMS @ 500 VDC
|
OCR Scan
|
PDF
|
19FEB2010
08FEB06
|