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    CTS Valpey Corporation VFAC170BH-1-111.7167MHZ

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    Vishay Intertechnologies ILSB0805ERR33K

    RF Inductors - SMD .33uH 10%
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    TTI ILSB0805ERR33K Reel 4,000 4,000
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    Vishay Intertechnologies ILSB1206ERR33K

    RF Inductors - SMD .33uH 10%
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    167MHZ Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: K7N803645M K7N801845M 256Kx36 & 512Kx18 Pipelined NtRAMTM Document Title 256Kx36 & 512Kx18-Bit Pipelined NtRAM TM Revision History History Draft Date Remark 0.0 1. Initial document. September. 1997 Preliminary 0.1 1. Changed speed bin from 167MHz to 150MHz


    Original     		PDF K7N803645M K7N801845M 256Kx36 512Kx18 512Kx18-Bit 167MHz 150MHz 400mA 450mA

    K7n801845m

    Abstract: No abstract text available
    Text: K7N803645M K7N801845M 256Kx36 & 512Kx18 Pipelined NtRAMTM Document Title 256Kx36 & 512Kx18-Bit Pipelined NtRAM TM Revision History History 1. Initial document. Draft Date September. 1997 Remark Preliminary 0.1 1. Changed speed bin from 167MHz to 150MHz 2. Changed DC Parameters;


    Original     		PDF K7N803645M K7N801845M 256Kx36 512Kx18 512Kx18-Bit 167MHz 150MHz 400mA 450mA K7n801845m

    Untitled

    Abstract: No abstract text available
    Text: KM736S849 KM718S949 256Kx36 & 512Kx18 Pipelined NtRAMTM Document Title 256Kx36 & 512Kx18-Bit Pipelined NtRAM TM Revision History History 1. Initial document. Draft Date September. 1997 Remark Preliminary 0.1 1. Changed speed bin from 167MHz to 150MHz 2. Changed DC Parameters;


    Original     		PDF KM736S849 KM718S949 256Kx36 512Kx18 512Kx18-Bit 167MHz 150MHz 400mA 450mA

    capacitor selection

    Abstract: effect of parasitic in capacitors
    Text: Application Bulletin AB-8 Power Supply Bypass Capacitor Selection Capacitor Selection Most of the energy in digital pulses lies in the area below Fknee, where: Fknee = 0.5 tr and tr is signal rise-time. For IsoLoop Isolators: Fknee = 0.5 = 167MHz 3 x10-9 This frequency may be considered the analog “bandwidth” of the device.


    Original     		PDF 167MHz x10-9 ISB-AP-08; capacitor selection effect of parasitic in capacitors

    DSO751SR

    Abstract: DSO321SR
    Text: SMD Crystal Oscillators DSO221SR/DSO321SR/DSO531SR/DSO751SR •Features ● Low current consumption: 8mA max 167MHz, 3.3V ● Low voltage operation: 1.8V/2.5V/2.8V/3.3V ● Offers Narrow deviation: ±20x10−6/±30×10−6/±50×10−6/±100×10−6 ● Available up to 167MHz by using AT cut fundamental


    Original     		PDF DSO221SR/DSO321SR/DSO531SR/DSO751SR 167MHz, 167MHz 815mm DSO221SR) DSO321SR/DSO531SR) DSO751SR) DSO221SR DSO321SR DSO531SR DSO751SR DSO321SR

    Untitled

    Abstract: No abstract text available
    Text: KM736S849 KM718S949 256Kx36 & 512Kx18 Pipelined NtRAMTM Document Title 256Kx36 & 512Kx18-Bit Pipelined NtRAM TM Revision History History Draft Date Remark 0.0 1. Initial document. September. 1997 Preliminary 0.1 1. Changed speed bin from 167MHz to 150MHz 2. Changed DC Parameters;


    Original     		PDF KM736S849 KM718S949 256Kx36 512Kx18 512Kx18-Bit 167MHz 150MHz 400mA 450mA

    Untitled

    Abstract: No abstract text available
    Text: SMD Crystal Oscillators DSO221SR/DSO321SR/DSO531SR/DSO751SR •Features ● Low current consumption: 8mA max 167MHz, 3.3V ● Low voltage operation: 1.8V/2.5V/2.8V/3.3V ● Offers Narrow deviation: ±20x10−6/±30×10−6/±50×10−6/±100×10−6 ● Available up to 167MHz by using AT cut fundamental


    Original     		PDF DSO221SR/DSO321SR/DSO531SR/DSO751SR 167MHz, 167MHz 815mm DSO221SR) DSO321SR/DSO531SR) DSO751SR) DSO221SR DSO531SR DSO321SR

    50REF

    Abstract: No abstract text available
    Text: KM736S849 KM718S949 256Kx36 & 512Kx18 Pipelined NtRAMTM Document Title 256Kx36 & 512Kx18-Bit Pipelined NtRAM TM Revision History History Draft Date Remark 0.0 1. Initial document. September. 1997 Preliminary 0.1 1. Changed speed bin from 167MHz to 150MHz 2. Changed DC Parameters;


    Original     		PDF KM736S849 KM718S949 256Kx36 512Kx18 512Kx18-Bit 167MHz 150MHz 400mA 450mA 50REF

    No Turnaround RAM

    Abstract: No abstract text available
    Text: KM736S849 KM718S949 PRELIMINARY 256Kx36 & 512Kx18 Pipelined NtRAMTM Document Title 256Kx36 & 512Kx18-Bit Pipelined NtRAM TM Revision History Rev. No. History Draft Date Remark 0.0 1. Initial document. September. 1997 Preliminary 0.1 1. Changed speed bin from 167MHz to 150MHz


    Original     		PDF KM736S849 KM718S949 256Kx36 512Kx18 512Kx18-Bit 167MHz 150MHz 400mA 450mA No Turnaround RAM

    K7N801845M

    Abstract: K7N803645M
    Text: K7N803645M K7N801845M 256Kx36 & 512Kx18 Pipelined NtRAMTM Document Title 256Kx36 & 512Kx18-Bit Pipelined NtRAM TM Revision History History 1. Initial document. Draft Date September. 1997 Remark Preliminary 0.1 1. Changed speed bin from 167MHz to 150MHz 2. Changed DC Parameters;


    Original     		PDF K7N803645M K7N801845M 256Kx36 512Kx18 512Kx18-Bit 167MHz 150MHz 400mA 450mA K7N801845M K7N803645M

    SME2411BGA-66

    Abstract: X1059A SEU1L-170-0 PCMCIA SRAM Memory Card 512k SPEC95 STP1080ABGA100 Sun Ultra AX STP1030ABGA167 STP3010PGA STP2024QFP
    Text: P roduct line Card SPARC Processors Processor Part Number Speed SPEC95 int/fp UltraSPARC-I STP1030ABGA-167 167MHz 7.1/11.0 STP1030ABGA-200 200MHz 8.4/12.8 STP1080ABGA-83 83MHz N/A STP1080ABGA-100 100MHz N/A SME1040BGA-266 266MHz 9.9/12.6 est. SME1040BGA-300


    Original     		PDF SPEC95 STP1030ABGA-167 167MHz STP1030ABGA-200 200MHz STP1080ABGA-83 83MHz STP1080ABGA-100 100MHz SME1040BGA-266 SME2411BGA-66 X1059A SEU1L-170-0 PCMCIA SRAM Memory Card 512k STP1080ABGA100 Sun Ultra AX STP1030ABGA167 STP3010PGA STP2024QFP

    Untitled

    Abstract: No abstract text available
    Text: ADS809 ADS 809 www.ti.com 12-Bit, 80MHz Sampling ANALOG-TO-DIGITAL CONVERTER TM FEATURES DESCRIPTION ● DYNAMIC RANGE: SNR: 65dB at 10MHz fIN SFDR: 68dB at 10MHz fIN The ADS809 is a high-dynamic range 12-bit, 80MHz pipelined Analog-to-Digital A/D converter. It includes a


    Original     		PDF ADS809 12-Bit, 80MHz 10MHz ADS809

    C6701

    Abstract: No abstract text available
    Text: TMS320C6701 FLOATINGĆPOINT DIGITAL SIGNAL PROCESSOR SPRS067E – MAY 1998 – REVISED MAY 2000 D Highest Performance Floating-Point Digital D D D D D Signal Processor DSP TMS320C6701 – 8.3-, 6.7-, 6-ns Instruction Cycle Time – 120-, 150-, 167-MHz Clock Rate


    Original     		PDF TMS320C6701 SPRS067E TMS320C6701 167-MHz 32-Bit TMS320C6201 C6701

    RJP 30 h1

    Abstract: No abstract text available
    Text: TMS320C6713B FLOATINGĆPOINT DIGITAL SIGNAL PROCESSOR SPRS294A − OCTOBER 2005 − REVISED NOVEMBER 2005 D Highest-Performance Floating-Point Digital D D D D D D Signal Processor DSP : TMS320C6713B − Eight 32-Bit Instructions/Cycle − 32/64-Bit Data Word


    Original     		PDF TMS320C6713B SPRS294A 32-Bit 32/64-Bit 200-MHz 167-MHz TMS320C67x RJP 30 h1

    bzx 850

    Abstract: bzx 850 30
    Text: CY7C1412AV18 CY7C1414AV18 36 Mbit QDR II SRAM Two Word Burst Architecture Features Functional Description • Separate independent read and write data ports ❐ Supports concurrent transactions ■ 250 MHz clock for high bandwidth ■ 2-word burst on all accesses


    Original     		PDF CY7C1412AV18 CY7C1414AV18 CY7C1412AV18, CY7C1414AV18 bzx 850 bzx 850 30

    C6000

    Abstract: TMS320C6000 TMS320C6411
    Text: TMS320C6411 FIXEDĆPOINT DIGITAL SIGNAL PROCESSOR SPRS196I − MARCH 2002 − REVISED JUNE 2005 D Low-Cost, High-Performance Fixed-Point D D D D DSP − TMS320C6411 − 3.33-ns Instruction Cycle Time − 300-MHz Clock Rate − Eight 32-Bit Instructions/Cycle


    Original     		PDF TMS320C6411 SPRS196I 33-ns 300-MHz 32-Bit TMS320C62x TMS320C64x 32-/40-Bit) 32-Bit, C6000 TMS320C6000 TMS320C6411

    9l reset

    Abstract: CY7C0852V-133AC CY7C09289V CY7C09369V CY7C09379V
    Text: CY7C093794V CY7C093894V CY7C09289V CY7C09369V CY7C09379V CY7C09389V3.3V 64K/128K x 36 and 128K/256K x 18 Synchronous Dual-Port RAM CY7C0851V/CY7C0852V CY7C0831V/CY7C0832V 3.3V 64K/128K x 36 and 128K/256K x 18 Synchronous Dual-Port RAM Features Functional Description


    Original     		PDF CY7C093794V CY7C093894V CY7C09289V CY7C09369V CY7C09379V CY7C09389V3 64K/128K 128K/256K CY7C0851V/CY7C0852V CY7C0831V/CY7C0832V 9l reset CY7C0852V-133AC

    K7A323600M

    Abstract: K7B321825M-QC65 K7A321800M
    Text: K7A323600M K7A321800M 1Mx36 & 2Mx18 Synchronous SRAM Document Title 1Mx36 & 2Mx18-Bit Synchronous Pipelined Burst SRAM Revision History Rev. No. History Draft Date Remark 0.0 1. Initial draft May. 10. 2001 Advance 0.1 1. Add 165FBGA package Aug. 29. 2001 Preliminary


    Original     		PDF K7A323600M K7A321800M 1Mx36 2Mx18 2Mx18-Bit 165FBGA K7A3236 165FBGA K7A323600M K7B321825M-QC65 K7A321800M

    ZZ 160 ITT

    Abstract: 36/ZZ 160 ITT
    Text: KM736S849 KM718S949 PRELIMINARY 256Kx36 & 512Kx18 Pipelined NfRAM Document Title 256KX36 & 512Kx18-Bit Pipelined NfRAM™ Revision Historv R ev. No. H isto rv Draft Date R em ark 0.0 1. Initial document. September. 1997 Prelim inary 0.1 1. Changed speed bin from 167MHz to 150MHz


    OCR Scan     		PDF KM736S849 KM718S949 256Kx36 512Kx18 512Kx18-Bit 167MHz 150MHz 150MHz 167MHz ZZ 160 ITT 36/ZZ 160 ITT

    84154

    Abstract: CY37128P84-125JI
    Text: fax id: 6146 Ultra371 28 UltraLogic 128-Macrocell ISR™ CPLD High speed Feat u res - W x = • 128 m acrocells in eight logic blocks 167MHz — tpo = 6.5 ns • In-System R e p ro g ra m m ab le ISR™ — ts = 3.5 ns — JTAG com plia nt on board p rogram m in g


    OCR Scan     		PDF Ultra371 128-Macrocell 167MHz 84154 CY37128P84-125JI

    Untitled

    Abstract: No abstract text available
    Text: KM736S849 KM718S949 PRELIMINARY 256Kx36 & 512Kx18 Pipelined NfRAM Document Title 256KX36 & 512Kx18-Bit Pipelined NfRAM™ Revision History Rev. No. Historv Draft Date Remark 0.0 1. Initial document. September. 1997 Prelim inary 0.1 1. Changed speed bin from 167MHz to 150MHz


    OCR Scan     		PDF KM736S849 KM718S949 256KX36 512Kx18 512Kx18-Bit 167MHz 150MHz

    Untitled

    Abstract: No abstract text available
    Text: KM736S849 KM718S949 256Kx36 & 512KX18 Pipelined NfRAM D o c u m e n t T itle 256Kx36 R e v is io n & 512Kx18-Bit Pipelined NfRAM™ H is io r v Historv Draft Date Remark 0.0 1. Initial document. September. 1997 Preliminary 0.1 1. Changed speed bin from 167MHz to 150MHz


    OCR Scan     		PDF KM736S849 KM718S949 256Kx36 512KX18 512Kx18-Bit 167MHz 150MHz 150MHz 167MHz

    ee94

    Abstract: No abstract text available
    Text: CRYSTAL CONTROLLED ran OSCILLATORS SURFACE MOUNT 3.3V PECL AURORA, IL 60505 PHONE 6 3 0 8 5 1 -4 7 2 2 FAX (63 0) 8 5 1 -5 0 4 0 www.conwin.com CONNOR W IN F IE L D EE94—51* SPECIFICATIONS Frequency Range E E 94-52* 13MHz to 167MHz 13MHz to 200MHz ±25ppm


    OCR Scan     		PDF EE94-52* EE94-53* EE94-54* 13MHz 167MHz 200MHz 167MHz 25ppm ee94

    LQFP-100

    Abstract: No abstract text available
    Text: TOSHIBA TC55WD1618FF-133,-150,-167 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT TENTATIVE SILICON GATE CMOS 1,048,576-WORD BY 18-BIT SYNCHRONOUS NO-TURNAROUND STATIC RAM DESCRIPTION The TC55WD1618FF is a synchronous static random access memory SRAM organized as 1,048,576 words by


    OCR Scan     		PDF TC55WD1618FF-133 TC55WD1618FF LQFP100-P-1420-0 LQFP-100