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    150 10V Search Results

    150 10V Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPJ1R004PB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 40 V, 160 A, 0.001 Ω@10V, S-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK4K1A60F Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 600 V, 2.0 A, 4.1 Ohm@10V, TO-220SIS Visit Toshiba Electronic Devices & Storage Corporation
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    150 10V Price and Stock

    Littelfuse Inc 0315010.VXP

    FUSE GLASS 10A 32VAC 3AB 3AG
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    DigiKey 0315010.VXP Bulk 5
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    Ozdisan Elektronik 0315010.VXP
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    Littelfuse Inc 0315.010VXP

    FUSE GLASS 10MA 250VAC 3AB 3AG
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    Ozdisan Elektronik 0315.010VXP
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    Littelfuse Inc 0215010.VXP

    FUSE CERAMIC 10A 250VAC 5X20MM
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    DigiKey 0215010.VXP Bulk 1
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    Ozdisan Elektronik 0215010.VXP
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    Samtec Inc JW-10-04-T-S-415-010-VS

    Conn Board Stacker HDR 10 POS 10.55mm Stack Height 3.96mm Solder ST SMD Bulk - Bulk (Alt: JW-10-04-T-S-415-0)
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    Master Electronics JW-10-04-T-S-415-010-VS
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    TDK Corporation VLS6045EX-150M

    Power Inductors - SMD 15uH 0.075ohms 3.1A
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    Mouser Electronics VLS6045EX-150M 59,579
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    150 10V Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    150N15

    Abstract: E 150N10 150N10 9100pF
    Text: HiPerFETTM Power MOSFET IXFN 150N15 VDSS ID25 RDS on Single MOSFET Die = 150 V = 150 A = 12.5 mW trr £ 250 ns Preliminary data sheet Symbol Test Conditions VDSS VDGR Maximum Ratings T J = 25°C to 150°C T J = 25°C to 150°C, RGS = 1MW 150 150 V V ±20


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    PDF 150N15 OT-227 E153432 150N15 E 150N10 150N10 9100pF

    Untitled

    Abstract: No abstract text available
    Text: HiPerFETTM Power MOSFET IXFN 150N15 VDSS ID25 RDS on Single MOSFET Die = 150 V = 150 A = 12.5 mW trr £ 250 ns Preliminary data sheet Symbol Test Conditions VDSS VDGR Maximum Ratings TJ = 25°C to 150°C TJ = 25°C to 150°C, RGS = 1MW 150 150 V V ±20 ±30


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    PDF 150N15 OT-227

    Tf 227

    Abstract: No abstract text available
    Text: IXFN 150N15 HiPerFETTM Power MOSFET VDSS ID25 RDS on Single MOSFET Die = 150 V = 150 A = 12.5 mW trr £ 250 ns Preliminary data sheet Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C, RGS = 1MΩ 150 150 V V VGS VGSM


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    PDF 150N15 OT-227 Tf 227

    Untitled

    Abstract: No abstract text available
    Text: HiPerFETTM Power MOSFET IXFN 150N15 VDSS ID25 RDS on Single MOSFET Die = 150 V = 150 A = 12.5 mW trr £ 250 ns Preliminary data sheet Symbol Test Conditions VDSS VDGR Maximum Ratings T J = 25°C to 150°C T J = 25°C to 150°C, RGS = 1MW 150 150 V V VGS VGSM


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    PDF 150N15 OT-227 E153432

    L7809CV

    Abstract: L7812ML L78S05CV L7812CV ST L78M06ABS l78m05acs L78S12CV L7808CV L7820CV L7815CV
    Text: VOLTAGE REGULATORS CROSS REFERENCE: SANYO VS ST T j o C Iout (A) Tol (%) 5V LOW DROP -40 to 150 1.5 2 TO-220 L4940V5 8.5V LOW DROP -40 to 150 1.5 2 TO-220 L4940V85 10V LOW DROP -40 to 150 1.5 2 TO-220 L4940V10 Description Package SANYO ST 12V LOW DROP -40 to 150


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    PDF O-220 L4940V5 L4940V85 L4940V10 L4940V12 L4941BDT OT-194 L7809CV L7812ML L78S05CV L7812CV ST L78M06ABS l78m05acs L78S12CV L7808CV L7820CV L7815CV

    180N15

    Abstract: 123B16
    Text: IXTK 180N15 High Current MegaMOSTMFET VDSS ID25 = 150 V = 180 A Ω = 9 mΩ RDS on N-Channel Enhancement Mode Preliminary Data Sheet Symbol Test conditions Maximum ratings VDSS TJ = 25°C to 150°C 150 V VDGR TJ = 25°C to 150°C; RGS = 1.0 MΩ 150 V VGS


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    PDF 180N15 728B1 123B1 728B1 065B1 180N15 123B16

    Untitled

    Abstract: No abstract text available
    Text: IXTK 128N15 High Current Mega MOSTMFET VDSS ID25 = 150 V = 128 A Ω = 15 mΩ RDS on N-Channel Enhancement Mode Preliminary Data Sheet Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ 150 150 V V VGS


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    PDF 128N15 O-264 728B1 123B1 728B1 065B1

    IXTH75N15

    Abstract: 75N15
    Text: IXTH 75N15 IXTT 75N15 High Current Power MOSFET VDSS ID25 = 150 V = 75 A Ω = 23 mΩ RDS on N-Channel Enhancement Mode Symbol Test Conditions VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ 150 150 V V VGS VGSM Continuous Transient ±20


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    PDF 75N15 O-247 405B2 IXTH75N15 75N15

    75N15

    Abstract: .75N15
    Text: IXTH 75N15 IXTT 75N15 High Current Power MOSFET VDSS ID25 = 150 V = 75 A Ω = 23 mΩ RDS on N-Channel Enhancement Mode Preliminary Data Sheet Symbol Test Conditions VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ 150 150 V V VGS VGSM Continuous


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    PDF 75N15 O-247 728B1 75N15 .75N15

    96N15P

    Abstract: IXTQ96N15P
    Text: IXTQ 96N15P IXTT 96N15P PolarHTTM Power MOSFET VDSS ID25 = 150 V = 96 A ≤ 24 mΩ Ω RDS on N-Channel Enhancement Mode Avalanche Rated Symbol Test Conditions Maximum Ratings VDSS TJ = 25° C to 150° C 150 V VDGR TJ = 25° C to 150° C; RGS = 1 MΩ 150


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    PDF 96N15P 96N15P IXTQ96N15P

    Untitled

    Abstract: No abstract text available
    Text: IXTH 75N15 IXTT 75N15 High Current Power MOSFET VDSS ID25 = 150 V = 75 A Ω = 23 mΩ RDS on N-Channel Enhancement Mode Symbol Test Conditions VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ 150 150 V V VGS VGSM Continuous Transient ±20


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    PDF 75N15 O-247 405B2

    96n15

    Abstract: No abstract text available
    Text: IXTQ 96N15P IXTT 96N15P PolarHTTM Power MOSFET VDSS ID25 = 150 V = 96 A Ω ≤ 24 mΩ RDS on N-Channel Enhancement Mode Avalanche Rated Symbol Test Conditions Maximum Ratings VDSS TJ = 25° C to 150° C 150 V VDGR TJ = 25° C to 150° C; RGS = 1 MΩ 150


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    PDF 96N15P 96n15

    diode SM 88A

    Abstract: transistor N 343 AD
    Text: IXTH 88N15 IXTT 88N15 High Current Power MOSFET V DSS I D25 = = = RDS on 150 V 88 A Ω 22 mΩ N-Channel Enhancement Mode Symbol Test Conditions V DSS V DGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ 150 150 V V VGS VGSM Continuous Transient


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    PDF 88N15 O-247 728B1 123B1 728B1 065B1 diode SM 88A transistor N 343 AD

    Untitled

    Abstract: No abstract text available
    Text: User's Guide SLUUA08A – March 2013 – Revised April 2013 bq2425xEVM-150, Single-Cell Li-Ion Switch-Mode Charger This user's guide describes the characteristics, operation, and use of the bq24250EVM-150, bq24251EVM-150, and bq24257EVM-150 evaluation modules EVM . These EVMs enable test and


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    PDF SLUUA08A bq2425xEVM-150 bq24250EVM-150 bq24251EVM-150 bq24257EVM-150 bq24250 bq24251 bq24257 bq2425x

    2N6658

    Abstract: VN66AF IRF620 IRF622 IRF630 IRF631 IRF632 IRF633 IRF640 IRF641
    Text: Pin© MOSPOWER Selector Guide Continued N-Channc4 MOSPOWER (Continued) jopeies aaMOdSOW Device T0-220AB /o V T0-202AA C— IIlt~\1 /// 11 TO-39 1-6 Breakdown Voltage (Volts) rDS(on} (Ohms) Continuous (Amps) 200 200 200 200 200 200 170 150 150 150 150 150


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    PDF IRF640 IRF642 IRF630 IRF632 IRF620 IRF622 VN1706D IRF641 IRF643 IRF631 2N6658 VN66AF IRF620 IRF622 IRF630 IRF631 IRF632 IRF633 IRF640 IRF641

    VN66AF

    Abstract: VN67AF VN46AF vn89af VN88AF 2N6658 IN400 VN46 IRF620 IRF630
    Text: Pin© MOSPOWER Selector Guide Continued N-Channc4 MOSPOWER (Continued) jopeies aaMOdSOW Device T0-220AB /o V T0-202AA C— IIlt~\1 /// 11 TO-39 1-6 Breakdown Voltage (Volts) rDS(on} (Ohms) Continuous (Amps) 200 200 200 200 200 200 170 150 150 150 150 150


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    PDF IRF640 IRF642 IRF630 IRF632 IRF620 IRF622 VN1706D IRF641 IRF643 IRF631 VN66AF VN67AF VN46AF vn89af VN88AF 2N6658 IN400 VN46 IRF620 IRF630

    skfh150

    Abstract: No abstract text available
    Text: se MIKRD n V drm tq Itrm s maximum values for continuous operation V rrm (Tv| = 125 °C) 350 A V (is 800 15 20 SKFT 150/08 DS SKFT 150/08 DT 1000 15 SKFT 150/10 DS 1) Ita v (sin. 180; Tease = 76 °C; 50 Hz) 150 A SKFH 150/08 DS SKFH 150/08 DT SEMIPACK 3


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    PDF FT150 SKFT150 SKFH150 013bL G00473A skfh150

    Untitled

    Abstract: No abstract text available
    Text: 5EMIKR0N V rrm tq T*j = 125 °C Itrms (maximum values for continuous operation) 350 A V US 150 A 800 15 20 SKFT 150/08 DS SKFT 150/08 DT 1000 15 SKFT 150/10 D S 1) V drm I t a v (sin. 160', Tease = 76 °C; 50 Hz) SKFH 150/08 DS SKFH 150/08 DT SEMIPACK 3


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    PDF SKFH150 SKFT150 A13bb71

    VN46AF

    Abstract: VN66AF 2N6658 VN89AF VN67AF VN88 2N6657 VN66AD IRF620 IRF630
    Text: Pin© MOSPOWER Selector Guide Continued N-Channc4 MOSPOWER (Continued) jopeies aaMOdSOW Device T0-220AB /o V T0-202AA C— IIlt~\1 /// 11 TO-39 1-6 Breakdown Voltage (Volts) rDS(on} (Ohms) Continuous (Amps) 200 200 200 200 200 200 170 150 150 150 150 150


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    PDF IRF640 IRF642 IRF630 IRF632 IRF620 IRF622 VN1706D IRF641 IRF643 IRF631 VN46AF VN66AF 2N6658 VN89AF VN67AF VN88 2N6657 VN66AD IRF620 IRF630

    VN88AD

    Abstract: 2N6658 VN88 IRF620 IRF622 IRF630 IRF631 IRF632 IRF633 IRF640
    Text: Pin© jopeies aaMOdSOW MOSPOWER Selector Guide Continued N-Channc4 MOSPOWER (Continued) Device T0-220AB /o V T0-202AA C— IIlt~\1 /// 11 TO-39 1-6 Breakdown Voltage (Volts) rDS(on} (Ohms) Continuous (Amps) 200 200 200 200 200 200 170 150 150 150 150 150


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    PDF IRF640 IRF642 IRF630 IRF632 IRF620 IRF622 VN1706D IRF641 IRF643 IRF631 VN88AD 2N6658 VN88 IRF620 IRF622 IRF630 IRF631 IRF632 IRF633 IRF640

    VN99AB

    Abstract: VN66AF 2N6658 VN46AF IRF620 IRF622 IRF630 IRF631 IRF632 IRF633
    Text: Pin© MOSPOWER Selector Guide Continued N-Channc4 MOSPOWER (Continued) jopeies aaMOdSOW Device T0-220AB /o V T0-202AA C— IIlt~\1 /// 11 TO-39 1-6 Breakdown Voltage (Volts) rDS(on} (Ohms) Continuous (Amps) 200 200 200 200 200 200 170 150 150 150 150 150


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    PDF IRF640 IRF642 IRF630 IRF632 IRF620 IRF622 VN1706D IRF641 IRF643 IRF631 VN99AB VN66AF 2N6658 VN46AF IRF620 IRF622 IRF630 IRF631 IRF632 IRF633

    semikron SKFT 150

    Abstract: semikron SKFT 40
    Text: SEMIKRON tq Tvj = 125 °C Itrms (m axim um values fo r contin u o us operation) V rrm V US 150 A 800 15 20 SKFT 150/08 DS SKFT 150/08 DT 1000 15 SKFT 150/10 D S 1) V drm 350 A Itav (sin. 180; Tease = 76 °C; 50 Hz) SKFH 150/08 DS SKFH 150/08 DT SEMIPACK 3


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    PDF SKFT150 semikron SKFT 150 semikron SKFT 40

    semikron SKFH150

    Abstract: Semipack skfh
    Text: SEMIKRDN Itrm s m axim um v a lu e s for co ntinuo us operation V rrm tq (Tv) = 125 °C) V US 800 15 20 SKFT 150/08 DS SKFT 150/08 DT 1000 15 SKFT 150/10 D S1) V drm 350 A It a v (Sin. 180; To«» = 76 °C; 50 Hz) 150 A SKFH 150/08 DS SKFH 150/08 DT SEMIPACK 3


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    PDF f--20-= SKFH150 semikron SKFH150 Semipack skfh

    irf540 TTL

    Abstract: IRF620 IRF622 IRF630 IRF631 IRF632 IRF633 IRF640 IRF641 IRF642
    Text: Pin© jopeies aaMOdSOW MOSPOWER Selector Guide Continued N-Channc4 MOSPOWER (Continued) Device T0-220AB /o V T0-202AA C— IIlt~\1 /// 11 TO-39 1 -6 Breakdown Voltage (Volts) rDS(on} (Ohms) Continuous (Amps) 200 200 200 200 200 200 170 150 150 150 150


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    PDF IRF640 IRF642 IRF630 IRF632 IRF620 IRF622 VN1706D IRF641 IRF643 IRF631 irf540 TTL IRF620 IRF622 IRF630 IRF631 IRF632 IRF633 IRF640 IRF641 IRF642