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    13NHG MOSFET Search Results

    13NHG MOSFET Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    MG800FXF1JMS3 Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC SBD、Low-side: SiC MOSFET Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation
    XPJ1R004PB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 40 V, 160 A, 0.001 Ω@10V, S-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK4K1A60F Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 600 V, 2.0 A, 4.1 Ohm@10V, TO-220SIS Visit Toshiba Electronic Devices & Storage Corporation

    13NHG MOSFET Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    13nhg

    Abstract: 48 13nhg mosfet 4813nhg 48 13nhg 4813NH 369D NTD4813NH 13nhg mosfet
    Text: NTD4813NH Power MOSFET 30 V, 40 A, Single N-Channel, DPAK/IPAK Features •ăLow RDS on to Minimize Conduction Losses •ăLow Capacitance to Minimize Driver Losses •ăOptimized Gate Charge to Minimize Switching Losses •ăLow RG •ăThese are Pb-Free Devices


    Original     		PDF NTD4813NH 25aws NTD4813NH/D 13nhg 48 13nhg mosfet 4813nhg 48 13nhg 4813NH 369D NTD4813NH 13nhg mosfet

    13nhg

    Abstract: 48 13nhg mosfet 48 13nhg 4813nhg 4813NH 13nhg mosfet 369D NTD4813NH NTD4813NHT4G
    Text: NTD4813NH Power MOSFET 30 V, 40 A, Single N−Channel, DPAK/IPAK Features • • • • • Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses Low RG These are Pb−Free Devices


    Original     		PDF NTD4813NH NTD4813NH/D 13nhg 48 13nhg mosfet 48 13nhg 4813nhg 4813NH 13nhg mosfet 369D NTD4813NH NTD4813NHT4G

    13nhg

    Abstract: 48 13nhg 48 13nhg mosfet 4813NH 4813nhg NTD4813NH-1G 369D NTD4813NH
    Text: NTD4813NH Power MOSFET 30 V, 40 A, Single N-Channel, DPAK/IPAK Features • • • • • Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses Low RG These are Pb-Free Devices


    Original     		PDF NTD4813NH NTD4813NH/D 13nhg 48 13nhg 48 13nhg mosfet 4813NH 4813nhg NTD4813NH-1G 369D NTD4813NH

    Untitled

    Abstract: No abstract text available
    Text: NTD4813NH, NVD4813NH Power MOSFET 30 V, 40 A, Single N−Channel, DPAK/IPAK Features • • • • • • Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses Low RG AEC−Q101 Qualified and PPAP Capable − NVD4813NH


    Original     		PDF NTD4813NH, NVD4813NH NTD4813NH/D

    4813NH

    Abstract: 13nhg 48 13nhg NVD4813NH 48 13nhg mosfet
    Text: NTD4813NH, NVD4813NH Power MOSFET 30 V, 40 A, Single N−Channel, DPAK/IPAK Features • • • • • • Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses Low RG AEC−Q101 Qualified and PPAP Capable − NVD4813NH


    Original     		PDF NTD4813NH, NVD4813NH AEC-Q101 NTD4813NH/D 4813NH 13nhg 48 13nhg 48 13nhg mosfet

    Untitled

    Abstract: No abstract text available
    Text: NTD4813NH, NVD4813NH Power MOSFET 30 V, 40 A, Single N−Channel, DPAK/IPAK Features • • • • • • Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses Low RG NVD Prefix for Automotive and Other Applications Requiring


    Original     		PDF NTD4813NH, NVD4813NH NTD4813NH/D