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    1348 TRANSISTOR Search Results

    1348 TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    1348 TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: 19-1348; Rev 0; 4/98 Precision Shunt Regulators with Reset in SOT23-3 _Features ♦ 100µA to 50mA Shunt Current Range _Applications _Ordering Information ♦ Low Cost ♦ 3-Pin SOT23 Package


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    PDF OT23-3 MAX6330/MAX6331 OT23-3 MAX6330) MAX6331) MAX6330 MAX6330/MAX6331

    68HC11

    Abstract: MAX633 MAX6330 MAX6331 transistor ekaa
    Text: 19-1348; Rev 0; 4/98 Precision Shunt Regulators with Reset in SOT23-3 _Features ♦ 100µA to 50mA Shunt Current Range _Applications _Ordering Information ♦ Low Cost ♦ 3-Pin SOT23 Package


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    PDF OT23-3 MAX6331) MAX6330) 140ms MAX6330 MAX6331 MAX6330/MAX6331 68HC11 MAX633 transistor ekaa

    SR latch

    Abstract: s-r latch VOLTAGE REGULATOR 230V inverter circuit diagram LT3587 power amplifer circuit diagram pwm inverter output filter schematic
    Text: DEMO CIRCUIT 1348A QUICK START GUIDE LT3587EUD LT3587EUD High Voltage Monolithic Inverter and Dual Boost DESCRIPTION Demonstration Circuit 1348 is a single chip solution for applications requiring two positive and one negative high voltage supplies. The input


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    PDF LT3587EUD LT3587EUD 20-lead SR latch s-r latch VOLTAGE REGULATOR 230V inverter circuit diagram LT3587 power amplifer circuit diagram pwm inverter output filter schematic

    transistor ekaa

    Abstract: 68HC11 MAX633 MAX6330 MAX6331
    Text: 19-1348; Rev 1; 12/05 Precision Shunt Regulators with Reset in SOT23-3 _Features The MAX6330/MAX6331 combine a precision shunt regulator with a power-on reset function in a single SOT23-3 package. They offer a low-cost method of


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    PDF OT23-3 MAX6330/MAX6331 OT23-3 MAX6330) MAX6331) MAX6330/MAX6331 transistor ekaa 68HC11 MAX633 MAX6330 MAX6331

    1008CS-220XMBC

    Abstract: ABA SURFACE MOUNT ABA-51563 ABA-52563 ABA-53563 AbA Transistor
    Text: Agilent ABA-51563 3.5 GHz Broadband Silicon RFIC Amplifier Application Note 1348 GND 2 Input Introduction Agilent Technologies’ ABA-51563 is a low current silicon gain block RFIC amplifier housed in a 6 lead SC-70 SOT-363 surface mount plastic package. Providing a


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    PDF ABA-51563 SC-70 OT-363) ABA-51563 5988-9197EN 5988-9467EN 1008CS-220XMBC ABA SURFACE MOUNT ABA-52563 ABA-53563 AbA Transistor

    Untitled

    Abstract: No abstract text available
    Text: 19-1348; Rev 1; 12/05 Precision Shunt Regulators with Reset in SOT23-3 _Features The MAX6330/MAX6331 combine a precision shunt regulator with a power-on reset function in a single SOT23-3 package. They offer a low-cost method of


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    PDF OT23-3 MAX6330/MAX6331 OT23-3 MAX6330) MAX6331) MAX6330/MAX6331

    AbA Transistor

    Abstract: rf choke 1008CS-220XMBC ABA-51563 ABA-52563 ABA-53563 ABA SURFACE MOUNT
    Text: ABA-51563 3.5 GHz Broadband Silicon RFIC Amplifier Application Note 1348 Output & Vcc AHx GND 1 GND 2 Input Introduction Avago Technologies’ ABA-51563 is a low current silicon gain block RFIC amplifier housed in a 6 lead SC-70 SOT-363 surface mount plastic package. Providing


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    PDF ABA-51563 ABA-51563 SC-70 OT-363) 5988-9197EN 5988-9467EN AbA Transistor rf choke 1008CS-220XMBC ABA-52563 ABA-53563 ABA SURFACE MOUNT

    CEFF640

    Abstract: PF202
    Text: CEFF640 March 1998 N-Channel Enhancement Mode Field Effect Transistor FEATURES 200V , 9.8A , RDS ON =180mΩ @VGS=10V Super high dense cell design for extremely low RDS(ON). D 6 High power and current handling capability. TO-220F package. G G D S S TO-220F


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    PDF CEFF640 O-220F O-220F CEFF640 PF202

    Untitled

    Abstract: No abstract text available
    Text: A Product Line of Diodes Incorporated ZXTP4003Z 100V PNP LED DRIVING TRANSISTOR IN SOT89 Features Mechanical Data • • • • • • • • • • • • BVCEO > -100V Maximum continuous current IC = -1A hFE > 100 @ IC = -150mA, VCE = -0.2V Lead Free, RoHS Compliant Note 1


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    PDF ZXTP4003Z -100V -150mA, AEC-Q101 J-STD-020 DS35460

    Diodes Incorporated 17-33

    Abstract: No abstract text available
    Text: A Product Line of Diodes Incorporated ZXTP4003Z 100V PNP LED DRIVING TRANSISTOR IN SOT89 Features Mechanical Data • • • • • • • • • • • • BVCEO > -100V Maximum continuous current IC = -1A hFE > 100 @ IC = -150mA, VCE = -0.2V Lead Free, RoHS Compliant Note 1


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    PDF ZXTP4003Z -100V -150mA, AEC-Q101 J-STD-020 ZXTP4003ZTA DS35460 Diodes Incorporated 17-33

    Untitled

    Abstract: No abstract text available
    Text: MSA1162GT1, MSA1162YT1 General Purpose Amplifier Transistors PNP Surface Mount • Moisture Sensitivity Level: 1 • ESD Rating: TBD http://onsemi.com COLLECTOR 3 MAXIMUM RATINGS TA = 25°C Rating Symbol Value Unit Collector−Base Voltage V(BR)CBO 60 Vdc


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    PDF MSA1162GT1, MSA1162YT1 SC-59

    Untitled

    Abstract: No abstract text available
    Text: Part Number: Integra IB0912M350 TECHNOLOGIES, INC. L-Band TACAN Transistor Silicon Bipolar − Ultra-high fT The high power pulsed transistor device part number IB0912M350 is designed for systems operating over the instantaneous bandwidth of 960-1215 MHz. While operating in class C mode under TACAN pulsing


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    PDF IB0912M350 IB0912M350 IB0912M350-REV-NC-DS-REV-D

    Untitled

    Abstract: No abstract text available
    Text: A Product Line of Diodes Incorporated ZXTP4003G 100V PNP LED DRIVING TRANSISTOR IN SOT223 Features Mechanical Data • • • • • • • • BVCEO > -100V Maximum continuous current IC = -1A hFE > 100 @ IC = -150mA, VCE = -0.2V Lead Free, RoHS Compliant Note 1


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    PDF ZXTP4003G OT223 -100V -150mA, AEC-Q101 J-STD-020 DS35459

    D 1414 transistor

    Abstract: HCPL 454 optocoupler 630 HCNW4506 OPTOCOUPLER 6N137 hcpl 8200 optocoupler a 4504 A 7860 Optocoupler HSSR-8060 2601 optocoupler
    Text: Single Channel 1 MBd Transistor Output Optocoupler 6N135/6 Type Part Number Package Prop VDE Insulation CTR CMR – V/µs (VCM) 300 400 Delay VIORM UL = 1 min. Page mil mil If tPHL tPLH Min. Max. 1000 10000 15000 DIP SO8 DIP mA µs (max.) % % (10 V) (1.5 kV) (1.5 kV) 630 Vp 1414 Vp 2500 V 5000 V No.


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    PDF 6N135/6 6N135 HCPL-0500 HCNW135 6N136 HCPL-0501 HCNW136 HCPL-4502 HCPL-0452 HCNW4502 D 1414 transistor HCPL 454 optocoupler 630 HCNW4506 OPTOCOUPLER 6N137 hcpl 8200 optocoupler a 4504 A 7860 Optocoupler HSSR-8060 2601 optocoupler

    1348 transistor

    Abstract: MPS-A12
    Text: Silicon 21 Darlington Transistor M P S-A 12 The General Electric MPS-A12 is a Silicon Planar Epitaxial Passivated NPN Darlington Transistor is designed for preamp­ lifier input applications where high impedance is a requirement. SYMBOL Collector to Emitter


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    PDF MPS-A12 1348 transistor

    Untitled

    Abstract: No abstract text available
    Text: SIEMENS BFG 193 NPN Silicon RF Transistor • For low noise, high-gain amplifiers up to 2GHz • For linear broadband amplifiers • fy = 8GHz F = 1 .3 d B at 900MHz ESP: Electrostatic discharge sensitive device, observe handling precaution! Type Marking Ordering Code


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    PDF 900MHz BFG193 Q62702-F1291 OT-223 235b05 Q12177D D1E1771

    ferroxcube for ferrite beads 56-590-65

    Abstract: VK200-20-4B MRF628 ferroxcube ferrite beads npn 1349 1348 transistor VK20020-4B 56-590-65/3B transistor c 1349 56-590-65-3B
    Text: MRF628 silicon The RF Line 0.5 W - 470 MHz RF POWER TRANSISTOR NPN SILICON NPN SILICON RF POWER TRANSISTOR . . . designed fo r 5 .0 * 15 V o lt, V H F /U H F large-signal A m p lifie r/M u l­ tiplier applications in m ilitary and mobile FM equipment. •


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    PDF MRF628 VK-200-20-4B ferroxcube for ferrite beads 56-590-65 VK200-20-4B MRF628 ferroxcube ferrite beads npn 1349 1348 transistor VK20020-4B 56-590-65/3B transistor c 1349 56-590-65-3B

    FR180

    Abstract: BFR180
    Text: SIEMENS B F R 180 NPN Silicon RF Transistor • For low-power amplifiers in mobile communication systems pager at collector currents from 0.2mA to 2.5mA • f j = 7GH;: F = 2.1 dB at 900MHz ESP: Electrostatic discharge sensitive device, observe handling precaution!


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    PDF 900MHz Q62702-F1296 OT-23 FR180 BFR180

    CBC 184 transistor

    Abstract: CBC 184 c transistor 2SA753 CBC 184 b transistor K 1357 t11g UPS 1353 10PS 2SA730 2SA731
    Text: 5 - - FOR USE BY ELECTRICIANS OVERSEAS : •M-EiiOSW HE New T ransistor Manual lists all the transistors registered with the Electronic Industries Association of Japan (EIAJ), arranged in a manner easy to look up. We hope that you will m ake full use of the data provided in this manual by referring to the Japanese-English


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    PDF 175MHz, 700MHz, 7c-25 /-700MHz, 2SA83B CBC 184 transistor CBC 184 c transistor 2SA753 CBC 184 b transistor K 1357 t11g UPS 1353 10PS 2SA730 2SA731

    1348 transistor

    Abstract: 1346 transistor transistor 1346
    Text: Philips Semiconductors Product specification N-channel enhancement mode MOS transistor FEATURES PHN103 PINNING - SOT96-1 S08 • High-speed switching PIN SYMBOL • No secondary breakdown 1 n.c • Very low on-state resistance. 2 s source 3 s source APPLICATIONS


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    PDF PHN103 OT96-1 1348 transistor 1346 transistor transistor 1346

    ULA1U

    Abstract: digilin ULA2G ULA1G
    Text: A R R A Y S : TH E U LA PRODUCT DATA S U M M A R Y - ULA DIGILIN ARRAYS A rray Type Gate Count ULA1G 100 ULA1L 150 ULA2G 160 1.9 ULA1U 280 3.4 676 741 14 to 40 ULA2L 340 200.0 715 1205 14 to 40 ULA2M 500 0.4 1184 968 14 to 40 14 to 40 Gate Power jjW No. o f Active


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    PDF 100mA ULA1U digilin ULA2G ULA1G

    DSB010

    Abstract: DSD010 DSC010 2sa1571 2SK1375 DSA010 CAPACITOR MICROPHONE 2SC4146 2SC4047 2SC4066
    Text: Ordering number: EN 5324A No.5324A SAßiYO Notification of the Designation of Maintenance and Obsolete Discrete Devices Affected Products : Products listed below Thank you for your continued use of SANYO semiconductor products. This notice announces the designation of maintenance and obsolete SANYO semiconductor products. Please make


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    PDF 2SA1622 2SC4211 2SA1179 2SC2812 2SK596 2SK1375 2SA1420to 2SC3653 3656895YK 2SC4113 DSB010 DSD010 DSC010 2sa1571 DSA010 CAPACITOR MICROPHONE 2SC4146 2SC4047 2SC4066

    optocouplers

    Abstract: high speed solid state relay 8 channel optocouplers IGBT Gate Drive Optocoupler analog input optocoupler IGBT Gate Drive high speed "solid state relay" optocoupler drive relay 630 optocoupler high speed logic to logic optocoupler
    Text: Whal H EW LETT O ptocouplers D ata Sheet Index • Single Channel, High Speed Optocouplers. 1-16 • High CMR, High Speed Optocouplers. 1-33


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    PDF

    delay line ms-19

    Abstract: D 1414 transistor HCPL 8200 HSSR-8060 HCPL-0703 8060 transistor
    Text: q i Single Channel 1 MBd Transistor Output Optocoupler 6N135/6 Type Part Number 300 mil DIP 6N135 HCPL-0500 HCNW135 / 6N136 HCPL-0501 HCNW136 / HCPL-4502I1] HCPL-0452M1 HCNW4502I1! / HCPL-4503H] HCPL-0453I1! HCNW450311! / HCPL-4504I1] HCPL-045411! HCNW450411!


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    PDF 6N135/6 6N135 HCPL-0500 HCNW135 6N136 HCPL-0501 HCNW136 HCPL-4502I1] HCPL-0452M1 HCNW4502I1! delay line ms-19 D 1414 transistor HCPL 8200 HSSR-8060 HCPL-0703 8060 transistor