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TDK Corporation MLZ2012N100LTD25 FIXED IND 10UH 500MA 300MOHM SMD
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	MLZ2012N100LTD25	Reel	46,000		2,000	1 - 10 - 100 - 1000 - 10000 $0.04704	Buy Now
Avnet Americas	MLZ2012N100LTD25	Reel	2,000	15 Weeks	2,000	1 - 10 - 100 - 1000 - 10000 $0.04084	Buy Now
	MLZ2012N100LTD25	Ammo Pack		16 Weeks, 3 Days	1	1 $0.127 10 $0.099 100 $0.077 1000 $0.077 10000 $0.077	Buy Now
Mouser Electronics	MLZ2012N100LTD25		56,233			1 $0.12 10 $0.078 100 $0.058 1000 $0.058 10000 $0.04	Buy Now
Newark	MLZ2012N100LTD25	Cut Tape	4,210		1	1 $0.127 10 $0.099 100 $0.077 1000 $0.077 10000 $0.077	Buy Now
Bristol Electronics	MLZ2012N100LTD25		1,000		23	1 - 10 - 100 $0.1125 1000 $0.0675 10000 $0.0675	Buy Now

TME	MLZ2012N100LTD25		60		1	1 $0.1178 10 $0.093 100 $0.0749 1000 $0.053 10000 $0.0441	Buy Now
ComSIT USA	MLZ2012N100LTD25		4,546			1 - 10 - 100 - 1000 - 10000 -	Get Quote
Avnet Abacus	MLZ2012N100LTD25			19 Weeks	2,000	1 - 10 - 100 - 1000 - 10000 -	Buy Now
Win Source Electronics	MLZ2012N100LTD25		188,051			1 - 10 - 100 - 1000 $0.0554 10000 $0.037	Buy Now
TDK Electronics B65812N1008D001 BOBBIN COIL FORMER RM 8
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	B65812N1008D001	Box	2,469		1	1 $1.83 10 $1.268 100 $0.9564 1000 $0.72313 10000 $0.72313	Buy Now
TME	B65812N1008D001		235		1	1 $1.6 10 $1.14 100 $0.78 1000 $0.68 10000 $0.68	Buy Now
TDK Electronics B65812N1005D001 BOBBIN COIL FORMER RM 8
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	B65812N1005D001	Box	921		1	1 $1.75 10 $1.204 100 $0.8016 1000 $0.67936 10000 $0.67936	Buy Now
TME	B65812N1005D001		27		1	1 $1.38 10 $1.14 100 $0.74 1000 $0.73 10000 $0.73	Buy Now
Littelfuse Inc IXFH12N100P MOSFET N-CH 1000V 12A TO247AD
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	IXFH12N100P	Tube	570		1	1 $10.3 10 $10.3 100 $6.10867 1000 $4.78312 10000 $4.78312	Buy Now
RS	IXFH12N100P	Bulk		8 Weeks	30	1 - 10 - 100 $7.4 1000 $7.4 10000 $7.4	Get Quote
IXYS Corporation IXFH12N100Q MOSFET N-CH 1000V 12A TO247AD
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	IXFH12N100Q	Tube	156		1	1 $17.11 10 $17.11 100 $17.11 1000 $17.11 10000 $17.11	Buy Now

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12N100 Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
12N100A Abstract: 12n100 IXGH12N100 IXGH12N100A Text: Low VCE sat IGBT High Speed IGBT Symbol Test Conditions VCES IXGH 12N100 IXGH 12N100A Maximum Ratings VCES TJ = 25°C to 150°C 1000 V VCGR TJ = 25°C to 150°C; RGE = 1 MW 1000 V VGES Continuous ±20 V VGEM Transient ±30 V IC25 TC = 25°C 24 A IC90 TC = 90°C	Original	PDF	12N100 12N100A O-247AD Mounti00 IXGH12N100/A IXGH12N100U/AU1 12N100A 12n100 IXGH12N100 IXGH12N100A
10N100 Abstract: No abstract text available Text: Advanced Technical Information HiPerFETTM Power MOSFETs IXFR 12N100Q ISOPLUS247TM Q CLASS VDSS ID25 1000 V 10 A IXFR 10N100Q 1000 V 9A Electrically Isolated Back Surface trr £ 200 ns RDS(on) 1.05 W 1.20 W N-Channel Enhancement Mode Avalanche Rated, High dV/dt	Original	PDF	12N100Q ISOPLUS247TM 10N100Q 12N100 10N104 IXFR10N100 IXFR12N100 10N100
Untitled Abstract: No abstract text available Text: HiPerFETTM Power MOSFETs IXFR ISOPLUS247TM Q CLASS VDSS ID25 RDS on 12N100Q 1000 V 10 A IXFR 10N100Q 1000 V 9A (Electrically Isolated Back Surface) trr ≤ 300 µs 1.1 Ω 1.20 Ω N-Channel Enhancement Mode Avalanche Rated, High dV/dt Low Gate Charge and Capacitances	Original	PDF	ISOPLUS247TM 12N100Q 10N100Q 12N100S IXFR10N100 IXFR12N100 IXFH12N100Q 728B1
Untitled Abstract: No abstract text available Text: Low VCE sat IGBT with Diode High Speed IGBT with Diode Combi Pack Symbol Test Conditions VCES IXGH 12N100U1 IXGH 12N100AU1 Maximum Ratings VCES TJ = 25°C to 150°C 1000 V TJ = 25°C to 150°C; RGE = 1 MW 1000 V VGES Continuous ±20 V VGEM Transient ±30	Original	PDF	12N100U1 12N100AU1 O-247AD IXGH12N100U1 IXGH12N100AU1
1000 volt mosfet Abstract: SHD225613 SHD2258 Text: SENSITRON SEMICONDUCTOR SHD225613 TECHNICAL DATA DATA SHEET 196, REV. A Formerly Part Number SHD2258 HERMETIC POWER MOSFET N-CHANNEL FEATURES: 1000 Volt, 1.05 Ohm, 12A MOSFET Isolated Hermetic Metal Package Fast Switching Low RDS on Equivalent to 12N100 Series	Original	PDF	SHD225613 SHD2258 12N100 1000 volt mosfet SHD225613 SHD2258
12n100q Abstract: No abstract text available Text: HiPerFETTM Power MOSFETs Q Class IXFH 12N100Q IXFT 12N100Q VDSS ID25 RDS on = 1000 V = 12 A = 1.05 W trr £ 200 ns N-Channel Enhancement Mode Avalanche Rated Low Qg, High dv/dt Preliminary data sheet Symbol Test Conditions Maximum Ratings V DSS TJ = 25°C to 150°C	Original	PDF	12N100Q 12N100Q O-247 O-268 100ms
IXFH12N100Q Abstract: 10N100 6a diode 12N100Q IXFR12N100 Text: HiPerFETTM Power MOSFETs IXFR ISOPLUS247TM Q CLASS VDSS ID25 RDS on 12N100Q 1000 V 10 A IXFR 10N100Q 1000 V 9A (Electrically Isolated Back Surface) trr ≤ 300 µs 1.1 Ω 1.20 Ω N-Channel Enhancement Mode Avalanche Rated, High dV/dt Low Gate Charge and Capacitances	Original	PDF	ISOPLUS247TM 12N100Q 10N100Q 12N100 10N100 10N1IS IXFR10N100 IXFH12N100Q 10N100 6a diode IXFR12N100
13N100 Abstract: 10N100 13n10 Text: HiPerFETTM Power MOSFETs VDSS IXFH / IXFM 10N100 IXFH / IXFM 12N100 IXFH 13N100 N-Channel Enhancement Mode High dv/dt, Low trr, HDMOSTM Family Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ VGS VGSM	Original	PDF	10N100 12N100 13N100 13N100 10N100 13n10
shd2258 Abstract: No abstract text available Text: SENSITRON SEMICONDUCTOR SHD225613 TECHNICAL DATA DATA SHEET 196, REV. A Formerly Part Number SHD2258 HERMETIC POWER MOSFET N-CHANNEL FEATURES: 1000 Volt, 1.05 Ohm, 12A MOSFET Isolated Hermetic Metal Package Fast Switching Low RDS on Equivalent to 12N100 Series	Original	PDF	SHD2258 SHD225613 12N100 SHD225613 O-254 O-254 shd2258
12N100Q Abstract: No abstract text available Text: HiPerFETTM Power MOSFETs Q Class IXFH 12N100Q IXFT 12N100Q VDSS ID25 RDS on = 1000 V = 12 A = 1.05 W trr £ 200 ns N-Channel Enhancement Mode Avalanche Rated Low Qg, High dv/dt Preliminary data sheet Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C	Original	PDF	O-247 O-268 12N100Q 12N100Q O-268 100ms
12N100L Abstract: IXTH12N100L Text: Power MOSFETs for Linear Operation IXTH 12N100L VDSS = 1000 V = 12 A ID25 RDS on = 1.3 Ω N-Channel Enhancement Mode Avalanche Rated Preliminary Data Sheet Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 1000 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ	Original	PDF	12N100L O-247 O-247 728B1 123B1 065B1 12N100L IXTH12N100L
IXGH12N100AU1 Abstract: IXGH12N100U1 Text: Low VCE sat IGBT with Diode High Speed IGBT with Diode Combi Pack Symbol Test Conditions VCES IXGH 12N100U1 IXGH 12N100AU1 Maximum Ratings VCES TJ = 25°C to 150°C 1000 V TJ = 25°C to 150°C; RGE = 1 MW 1000 V VGES Continuous ±20 V VGEM Transient ±30	Original	PDF	12N100U1 12N100AU1 O-247AD IXGH12N100U1 IXGH12N100AU1 IXGH12N100AU1 IXGH12N100U1
12N100F Abstract: No abstract text available Text: HiPerRFTM Power MOSFETs F-Class: MegaHertz Switching IXFH 12N100F VDSS IXFT 12N100F ID25 RDS on = 1000 V = 12 A = 1.05 Ω trr ≤ 250 ns N-Channel Enhancement Mode Avalanche Rated, Low Qg, Low Intrinsic Rg High dV/dt, Low trr Preliminary Data Sheet TO-247 AD (IXFH)	Original	PDF	12N100F O-247 728B1
10N100F Abstract: 10n100 98934 Text: VDSS HiPerFETTM Power MOSFETs IXFR ISOPLUS247TM ID25 RDS on 12N100F 1000 V 10 A IXFR 10N100F 1000 V 9A F-Class: MegaHertz Switching trr ≤ 250 ns (Electrically Isolated Back Surface) 1.05 Ω 1.20 Ω N-Channel Enhancement Mode Avalanche Rated, High dV/dt	Original	PDF	ISOPLUS247TM 12N100F 10N100F IXFR10N100 IXFR12N100 728B1 10n100 98934

Untitled Abstract: No abstract text available Text: □IXYS Advanced Technical Information HiPerFET Power MOSFETs ISOPLUS247™ Q CLASS ix f r DSS D 25 10 A 12N100Q 1000 V IXFR 10N100Q 1000 V 9A Electrically Isolated Back Surface t rr < 200 ns D S (on) 1.05 Q 1.20 Q N-Channel Enhancement Mode Avalanche Rated, HighdV/dt	OCR Scan	PDF	ISOPLUS247â 12N100Q 10N100Q 12N100 10N100 IXFR10N100
7N60B Abstract: 65A3 40N60A 60N60 IXGA 12N60C 200n60 ixgh 1500 30N30 IXG IGBT ixgh Text: Insulated Gate Bipolar Transistors IGBT G series (high gain, high speed) v CE{Mt) Type T „ = 25°C A = 150°C New t jm > > IXGH 28N30 > 56 60 60_ IXGH 30N30 > IXGH 4QN30 > IXGH 31N60 IXGH IXGH IXGH > IXGN IXGN > IX G A 12N100 IXGH 12N100 IXGP 12N100 28	OCR Scan	PDF	30N30 28N30 4QN30 31N60 38N60 41N60 60N60 200N60 25N100A 7N60B 65A3 40N60A IXGA 12N60C 200n60 ixgh 1500 IXG IGBT ixgh
D1488 Abstract: D2523 12n100q mss1000 ld12a Text: EIIXYS HiPerFET Power MOSFETs Q Class IXFH 12N100Q IXFT 12N100Q N-Channel Enhancement Mode Avalanche Rated Low Qg, High dv/dt V DSS ^D25 R DS on = 1000 V = 12 A = 1.05 Q trr < 200 ns Preliminary data sheet Symbol Test Conditions Maximum Ratings V DSS Td = 25°C to 150°C	OCR Scan	PDF	12N100Q O-247AD 00A/ns O-247 D1488 D2523 mss1000 ld12a
12N100 Abstract: No abstract text available Text: IGBT with Diode Low VCE sat High speed IXGA/12N100U1 IXGA / IX G P 12N100AU1 Symbol Test Conditions V CES T j = 25°C to 150°C 1000 V v CGR T J, = 25°C to 150°C; Rrc = 1 MQ Gfc 1000 V v GES Continuous ±20 V VGEM Transient ±30 V Tc = 25°C 24 A Tc = 90°C	OCR Scan	PDF	IXGA/IXGP12N100U1 12N100AU1 O-220 O-263 12N100
ixgh 1500 Abstract: 40N60A 25N120 200n60 60n60 igbt smd 30n60 10N60A 30N60A .25N100 20n60a Text: Insulated Gate Bipolar Transistors IGBT G series with high gain V•CSS : ■■ Type . TJm = 15° CC > New ► IXGA IXGH IXGH IXGH IXGH IXGH IXGH IXGH 10N60 10N60 20N60 31N60 30N60 38N60 40N60 60N60 IXGH 10N100 >■ IXGA 12N100 > IXGH 12N100 > ► >•	OCR Scan	PDF	10N60 20N60 31N60 30N60 38N60 40N60 60N60 32N60BS 40N60A ixgh 1500 25N120 200n60 60n60 igbt smd 10N60A 30N60A .25N100 20n60a
Untitled Abstract: No abstract text available Text: □ I X Y S Low VrP, IGBT with Diode CE sat High Speed IGBT with Diode Combi Pack v CES IXGH 12N100U1 IXGH 12N100AU1 ^C25 V CE(sat) 1000 V 24 A 3.5 V 1000 V 24 A 4.0 V TO-247 SMD (Note 1) Maximum Ratings Symbol Test Conditions V v CES V CGR Td = 25°C to 150°C	OCR Scan	PDF	12N100U1 12N100AU1 O-247 IXGH12N100U1 IXGH12N100AU1
IXYS DS 145 12A Abstract: IXYS DS 145 LTS 543 Text: nixYs HiPerFET Power MOSFETs Q Class IXFH 12N100Q IX F T 12N100Q DSS D25 P DS on = 1000 V 12 A = 1.05 Q trr < 200 ns N-Channel Enhancement Mode Avalanche Rated Low Qg, High dv/dt Preliminary data sheet TO-247 AD (IXFH) Symbol Test Conditions Maximum Ratings	OCR Scan	PDF	O-247 12N100Q 12N100Q to150 IXYS DS 145 12A IXYS DS 145 LTS 543
Untitled Abstract: No abstract text available Text: □IXYS IXFH 10N100 IXFH 12N100 HiPerFET Power MOSFETs IXFH/FM 10N 100 IXFH/FM 12N100 IXFM 10N100 IXFM 12N100 ^DSS 1000 V 1000 V ^D25 10 A 12 A D DS on 1.20 a 1.05 a K 250 ns 250 ns N-Channel Enhancement Mode High dv/dt, Low t , HDMOS™ Family Symbol	OCR Scan	PDF	10N100 12N100
Untitled Abstract: No abstract text available Text: IXGH 12N100U1 IXGH 12N100AU1 Low VCE sat IGBT with Diode High Speed IGBT with Diode VCES ^C25 V ¥ CE(sat) 1000 V 1000 V 24 A 24 A 3.5 V 4.0 V TO-247 SMD* E Symbol Test Conditions v CES VcOR Td = 25°C to 150°C T j = 25°C to 150°C; RGE = 1 M H VGES v SBB	OCR Scan	PDF	12N100U1 12N100AU1 O-247 O-247 -247S 12N100
ixth12n100 Abstract: 12n100 3055P Text: n ix Y S MegaMOS FET IXTH / IXTM 10N100 IXTH / IXTM 12N100 VDSS ^D25 1000 V 1000 V 10 A 12 A p DS on 1.20 Q 1.05 Q N-Channel Enhancement Mode Symbol Test Conditions Maximum Ratings V DSS T0 =25°Cto150°C 1000 V VDGR Tj = 25° C to 150° C; RGS= 1 Mi2 1000	OCR Scan	PDF	10N100 12N100 Cto150 O-247AD O-204 O-204 ixth12n100 3055P

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12N100 Price and Stock

TDK Corporation MLZ2012N100LTD25

TDK Electronics B65812N1008D001

TDK Electronics B65812N1005D001

Littelfuse Inc IXFH12N100P

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12N100 Datasheets Context Search

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1000 volt mosfet

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7N60B

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IXYS DS 145 12A

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