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    TN28F010-150-G Rochester Electronics LLC 28F010 - 128K X 8 Flash Visit Rochester Electronics LLC Buy
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    SF Impression Pixel

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    Displaytech Ltd 64128KX FC BW-3

    LCD Graphic Display Modules & Accessories 128X64 FSTN FPC Interface Wht Backlight
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    Mouser Electronics 64128KX FC BW-3 1,687
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    Vishay Precision Group Inc MAX128K00B

    Metal Foil Resistors - Through Hole MAX128K00B 5 PPM
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    Bel Power Solutions 20IMX4-1212-8K

    Isolated DC/DC Converters - Through Hole POWER SUPPLY;DC-DC;IN 8.4to36V;OUT +12/-12V;0.17/0.17A;OPTION K;;;
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    Cornell Dubilier Electronics Inc 128KXM050M

    Aluminum Electrolytic Capacitors - Radial Leaded 1200uF 50V 20% tol. ELECTROLYTIC
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    Cornell Dubilier Electronics Inc 128KXM035M

    Aluminum Electrolytic Capacitors - Radial Leaded 1200uF 35V 20% tol. ELECTROLYTIC
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    128K X 8 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    79LV0832

    Abstract: Maxwell 79lv0832
    Text: 79LV0832 Low Voltage 8 Megabit 256K x 32-Bit EEPROM MCM CE1 128K x 8 128K x 8 128K x 8 128K x 8 128K x 8 128K x 8 128K x 8 128K x 8 ADD CNTL CE2 I/O0-7 I/O8-15 I/016-23 I/O24-31 Memory Logic Diagram FEATURES: DESCRIPTION: • • • • Maxwell Technologies’ 79LV0832 multi-chip module (MCM)


    Original     		PDF 79LV0832 32-Bit) I/016-23 79LV0832 32-bit Maxwell 79lv0832

    Untitled

    Abstract: No abstract text available
    Text: 79LV0408 Low Voltage 4 Megabit 512k x 8-bit EEPROM CE1 CE2 CE3 CE4 RES R/B WE OE A0-16 128K x 8 128K x 8 128K x 8 128K x 8 I/O0-7 Logic Diagram Memory FEATURES: DESCRIPTION: • Four 128k x 8-bit EEPROMs MCM • RAD-PAK radiation-hardened against natural


    Original     		PDF 79LV0408 A0-16

    Untitled

    Abstract: No abstract text available
    Text: 79C0408 4 Megabit 512k x 8-bit EEPROM MCM CE2 CE1 CE3 CE4 RES R/B WE OE A0-16 128K x 8 128K x 8 128K x 8 128K x 8 Logic Diagram FEATURES: DESCRIPTION: • Four 128k x 8-bit EEPROMs MCM • RAD-PAK radiation-hardened against natural space radiation • Total dose hardness:


    Original     		PDF 79C0408 A0-16

    79LV0408

    Abstract: Maxwell 79lv0408
    Text: 79LV0408 Low Voltage 4 Megabit 512k x 8-bit EEPROM CE1 CE2 CE3 CE4 RES R/B WE OE A0-16 128K x 8 128K x 8 128K x 8 128K x 8 I/O0-7 Logic Diagram Memory FEATURES: DESCRIPTION: • Four 128k x 8-bit EEPROMs MCM • RAD-PAK radiation-hardened against natural


    Original     		PDF 79LV0408 A0-16 79LV0408 Maxwell 79lv0408

    Untitled

    Abstract: No abstract text available
    Text: 79C0408 4 Megabit 512k x 8-bit EEPROM MCM CE2 CE1 CE3 CE4 RES R/B WE OE A0-16 128K x 8 128K x 8 128K x 8 128K x 8 Memory I/O0-7 Logic Diagram FEATURES: DESCRIPTION: • Four 128k x 8-bit EEPROMs MCM • RAD-PAK radiation-hardened against natural space radiation


    Original     		PDF 79C0408 A0-16

    79LV0408

    Abstract: No abstract text available
    Text: 79LV0408 Low Voltage 4 Megabit 512k x 8-bit EEPROM CE1 CE2 CE3 CE4 RES R/B WE OE A0-16 128K x 8 128K x 8 128K x 8 128K x 8 I/O0-7 Logic Diagram Memory FEATURES: DESCRIPTION: • Four 128k x 8-bit EEPROMs MCM • RAD-PAK radiation-hardened against natural


    Original     		PDF 79LV0408 A0-16 79LV0408

    transistor comparison data sheet

    Abstract: No abstract text available
    Text: 79C0408 4 Megabit 512k x 8-bit EEPROM MCM CE2 CE1 CE3 CE4 RES R/B WE OE A0-16 128K x 8 128K x 8 128K x 8 128K x 8 Memory I/O0-7 Logic Diagram FEATURES: DESCRIPTION: • Four 128k x 8-bit EEPROMs MCM • RAD-PAK radiation-hardened against natural space radiation


    Original     		PDF 79C0408 A0-16 transistor comparison data sheet

    Untitled

    Abstract: No abstract text available
    Text: 79LV0408 Low Voltage 4 Megabit 512k x 8-bit EEPROM CE1 CE2 CE3 CE4 RES R/B WE OE A0-16 128K x 8 128K x 8 128K x 8 128K x 8 I/O0-7 Logic Diagram Memory FEATURES: DESCRIPTION: • Four 128k x 8-bit EEPROMs MCM • RAD-PAK radiation-hardened against natural


    Original     		PDF 79LV0408 A0-16

    Untitled

    Abstract: No abstract text available
    Text: 79C0408 4 Megabit 512k x 8-bit EEPROM MCM CE2 CE1 CE3 CE4 RES R/B WE OE A0-16 128K x 8 128K x 8 128K x 8 128K x 8 Memory I/O0-7 Logic Diagram FEATURES: DESCRIPTION: • Four 128k x 8-bit EEPROMs MCM • RAD-PAK radiation-hardened against natural space radiation


    Original     		PDF 79C0408 A0-16 79C0408

    Untitled

    Abstract: No abstract text available
    Text: 79C0408 4 Megabit 512k x 8-bit EEPROM MCM CE1 CE2 CE3 CE4 RES R/B WE OE A0-16 128K x 8 128K x 8 128K x 8 128K x 8 FEATURES: DESCRIPTION: • Four 128k x 8-bit EEPROMs MCM • RAD-PAK radiation-hardened against natural space radiation • Total dose hardness:


    Original     		PDF 79C0408 A0-16

    Untitled

    Abstract: No abstract text available
    Text: 79C0408 4 Megabit 512k x 8-bit EEPROM MCM CE1 CE2 CE3 CE4 RES R/B WE OE 79C0408 A0-16 128K x 8 128K x 8 128K x 8 128K x 8 I/O0-7 FEATURES DESCRIPTION: • Four 128k x 8-bit EEPROMs MCM • RAD-PAK radiation-hardened against natural space radiation • Total dose hardness:


    Original     		PDF 79C0408 A0-16

    Untitled

    Abstract: No abstract text available
    Text: 79C0408 4 Megabit 512k x 8-bit EEPROM MCM CE1 CE2 CE3 CE4 RES R/B WE OE A0-16 128K x 8 128K x 8 128K x 8 128K x 8 I/O0-7 DESCRIPTION: • Four 128k x 8-bit EEPROMs MCM • RAD-PAK radiation-hardened against natural space radiation • Total dose hardness (RP Package):


    Original     		PDF 79C0408 A0-16

    CY62128

    Abstract: CY62128V JESD22 CY62128-SC
    Text: Cypress Semiconductor Qualification Report QTP# 97195 VERSION 1.0 October, 1997 128K x 8 SRAM - R32 Technology - Fab4 Qualification CY62128 128K x 8 Static Ram 5V Operation CY62128V 128K x 8 Static Ram (3V Operation) Cypress Semiconductor, Inc. 128K x 8 SRAM - R32 Technology


    Original     		PDF CY62128 CY62128V CY62128/CY62128V 32-pin, 400-mil 85C/85 CY62128-SC /-65C CY62128V-SC CY62128 CY62128V JESD22 CY62128-SC

    Untitled

    Abstract: No abstract text available
    Text: CY7C093794V CY7C093894V CY7C09289V CY7C09369V CY7C09379V CY7C09389V3.3V 64K/128K x 36 and 128K/256K x 18 Synchronous Dual Port RAM 1CY7C0851V CY7C0852V CY7C0851V/CY7C0852V CY7C0831V/CY7C0832V PRELIMINARY 3.3V 64K/128K x 36 and 128K/256K x 18 Synchronous Dual Port RAM


    Original     		PDF CY7C093794V CY7C093894V CY7C09289V CY7C09369V CY7C09379V CY7C09389V3 64K/128K 128K/256K 1CY7C0851V CY7C0852V

    CY7C0837AV

    Abstract: CY7C09289V CY7C09369V CY7C09379V CY7C09389V JEDEC 144ball FBGA BW144
    Text: CY7C093794V CY7C093894V CY7C09289V CY7C09369V CY7C09379V CY7C09389VFLEx18 3.3V 64K/128K x 36 and 128K/256K x 18 Synchronous Dual-Port RAM CY7C0837AV CY7C0830AV/CY7C0831AV CY7C0832AV/CY7C0833AV FLEx18™ 3.3V 64K/128K x 36 and 128K/256K x 18 Synchronous Dual-Port RAM


    Original     		PDF CY7C093794V CY7C093894V CY7C09289V CY7C09369V CY7C09379V CY7C09389VFLEx18TM 64K/128K 128K/256K CY7C0837AV CY7C0830AV/CY7C0831AV CY7C0837AV CY7C09389V JEDEC 144ball FBGA BW144

    Untitled

    Abstract: No abstract text available
    Text: CY7C093794V CY7C093894V CY7C09289V CY7C09369V CY7C09379V CY7C09389VFLEx18 3.3V 64K/128K x 36 and 128K/256K x 18 Synchronous Dual-Port RAM CY7C0837AV CY7C0830AV/CY7C0831AV CY7C0832AV/CY7C0833AV FLEx18™ 3.3V 64K/128K x 36 and 128K/256K x 18 Synchronous Dual-Port RAM


    Original     		PDF CY7C093794V CY7C093894V CY7C09289V CY7C09369V CY7C09379V CY7C09389V FLEx18TM 64K/128K 128K/256K CY7C0837AV

    1.0mm pitch BGA

    Abstract: No abstract text available
    Text: CY7C093794V CY7C093894V CY7C09289V CY7C09369V CY7C09379V CY7C09389VFLEx18 3.3V 64K/128K x 36 and 128K/256K x 18 Synchronous Dual-Port RAM CY7C0837AV CY7C0830AV/CY7C0831AV CY7C0832AV/CY7C0833AV FLEx18™ 3.3V 64K/128K x 36 and 128K/256K x 18 Synchronous Dual-Port RAM


    Original     		PDF CY7C093794V CY7C093894V CY7C09289V CY7C09369V CY7C09379V CY7C09389V FLEx18TM 64K/128K 128K/256K CY7C0837AV 1.0mm pitch BGA

    BW144

    Abstract: BB144 JEDEC 144ball FBGA
    Text: CY7C093794V CY7C093894V CY7C09289V CY7C09369V CY7C09379V CY7C09389VFLEx18 3.3V 64K/128K x 36 and 128K/256K x 18 Synchronous Dual-Port RAM CY7C0837AV CY7C0830AV/CY7C0831AV CY7C0832AV/CY7C0833AV FLEx18™ 3.3V 64K/128K x 36 and 128K/256K x 18 Synchronous Dual-Port RAM


    Original     		PDF CY7C093794V CY7C093894V CY7C09289V CY7C09369V CY7C09379V CY7C09389V FLEx18TM 64K/128K 128K/256K CY7C0837AV BW144 BB144 JEDEC 144ball FBGA

    1.0mm pitch BGA

    Abstract: No abstract text available
    Text: CY7C093794V CY7C093894V CY7C09289V CY7C09369V CY7C09379V CY7C09389VFLEx18 3.3V 64K/128K x 36 and 128K/256K x 18 Synchronous Dual-Port RAM CY7C0837AV CY7C0830AV/CY7C0831AV CY7C0832AV/CY7C0833AV FLEx18™ 3.3V 64K/128K x 36 and 128K/256K x 18 Synchronous Dual-Port RAM


    Original     		PDF CY7C093794V CY7C093894V CY7C09289V CY7C09369V CY7C09379V CY7C09389V FLEx18TM 64K/128K 128K/256K CY7C0837AV 1.0mm pitch BGA

    Untitled

    Abstract: No abstract text available
    Text: 79LV0408 Low Voltage 4 Megabit 512k x 8-bit EEPROM CE1 CE2 CE3 CE4 RES R/B WE OE A0-16 128K x 8 128K x 8 128K x 8 I/O0-7 • • • Four 128k x 8-bit EEPROMs MCM • RAD-PAK radiation-hardened against natural space radiation • Total dose hardness: - > 100 krad (Si), depending upon space mission


    Original     		PDF 79LV0408 A0-16

    14560

    Abstract: cd 5151
    Text: EDI8F32128V 128K x 32 Static RAM CMOS, High Speed Module FEATURES DESCRIPTION • 128K x 32 bit CMOS Static RAM The EDI8F32128V is a high speed 4 megabit Static RAM module organized as 128K words by 32 bits. This module is constructed from four 128K x 8 Static RAMs in SOJ packages on an epoxy


    Original     		PDF EDI8F32128V EDI8F32128V 8F32128V 038-8F32128V 039-8F32128V EDI8F32128V10MMC EDI8F32128V12MMC EDI8F32128V10MZC 14560 cd 5151

    TSOP 1376

    Abstract: MX27C2048 MX27C2100
    Text: Introduction Selection Guide MX27C2100/27C2048 2M-BIT 256K x 8/128K x 16 CMOS EPROM FEATURES • 128K x 16 organization(MX27C2048, JEDEC pin out) • 256K x 8 or 128K x 16 organization(MX27C2100, ROM pin out compatible) • +12.5V programming voltage • Fast access time: 55/70/90/120/150 ns


    Original     		PDF MX27C2100/27C2048 8/128K MX27C2048, MX27C2100, MX27C2048) MX27C2100/2048 MX27C2100) TSOP 1376 MX27C2048 MX27C2100

    L7C108WC25

    Abstract: MT5C1008 l7c109wi25
    Text: L7C108/109 L7C108/109 DEVICES INCORPORATED 128K x 8 Static RAM Low Power 128K x 8 Static RAM (Low Power) DEVICES INCORPORATED FEATURES DESCRIPTION q 128K x 8 Static RAM with Chip Select Powerdown, Output Enable q Auto-Powerdown Design q Advanced CMOS Technology


    Original     		PDF L7C108/109 MIL-STD-883, CY7C108/109, IDT71024/71B024, MT5C1008, MCM6226A/62L26A, CXK581020 32-pin L7C108WC25 MT5C1008 l7c109wi25

    Untitled

    Abstract: No abstract text available
    Text: AK632128W/AK632128Z 128K x 32 SRAM MODULE ACCUTEK MICROCIRCUIT DESCRIPTION The Accutek AK632128 high density memory module is a static random access memory organized in 128K x 32 bit words. The assembly consists of four high speed 128K x 8 SRAMs in surface


    OCR Scan     		PDF AK632128W/AK632128Z AK632128 64-Pin 0107b47