Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    10A 400V BIPOLAR TRANSISTOR Search Results

    10A 400V BIPOLAR TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    GT30J110SRA Toshiba Electronic Devices & Storage Corporation IGBT, 1100 V, 60 A, Built-in Diodes, TO-3P(N) Visit Toshiba Electronic Devices & Storage Corporation
    TLP5702H Toshiba Electronic Devices & Storage Corporation Photocoupler (Gate Driver Coupler), High-Topr / IGBT driver, 5000 Vrms, SO6L Visit Toshiba Electronic Devices & Storage Corporation
    TLP5705H Toshiba Electronic Devices & Storage Corporation Photocoupler (Gate Driver Coupler), High-Topr / IGBT driver, 5000 Vrms, SO6L Visit Toshiba Electronic Devices & Storage Corporation

    10A 400V BIPOLAR TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    BUX48

    Abstract: TRANSISTOR BIPOLAR 400V 20A 10a 400v bipolar transistor BUX48A
    Text: BUX48 High Power Bipolar Transistor High Voltage Switching Features: • Collector-Emitter sustaining voltageVCEO sus = 400V (Minimum) - BUX48 = 450V (Minimum) - BUX48A. • Collector-Emitter saturation voltageVCE(sat) = 1.5V (Maximum) at IC = 10A for BUX48


    Original     		PDF BUX48 BUX48A. BUX48A BUX48 TRANSISTOR BIPOLAR 400V 20A 10a 400v bipolar transistor BUX48A

    10a 400v bipolar transistor

    Abstract: C-150 IRGS10B60KD IRGSL10B60KD ultrafast diode 10a 400v diode 10a 400v
    Text: PD - 94925 IRGB10B60KDPbF IRGS10B60KD IRGSL10B60KD INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • Low VCE on Non Punch Through IGBT Technology. • Low Diode VF. • 10µs Short Circuit Capability. • Square RBSOA. • Ultrasoft Diode Reverse Recovery Characteristics.


    Original     		PDF IRGB10B60KDPbF IRGS10B60KD IRGSL10B60KD O-220AB O-220CTOR O-220AB. 10a 400v bipolar transistor C-150 IRGS10B60KD IRGSL10B60KD ultrafast diode 10a 400v diode 10a 400v

    JANS2N2484

    Abstract: JANS2N3439UA JANS2N3637 transistors SMD npn JANS2N5339U3 JANS2N7373
    Text: JANS QUALIFIED BI-POLAR TRANSISTORS* Part # JANS QUALIFIED BI-POLAR TRANSISTORS* Type Voltage hFE @ Ic Rated Ic Package JANS QUALIFIED BI-POLAR TRANSISTORS* JANS QUALIFIED BI-POLAR TRANSISTORS* Part # Slash Sheet Type Voltage hFE @ Ic Rated Ic Package JANS2N930


    Original     		PDF JANS2N930 JANS2N930UB JANS2N2218 JANS2N2218A JANS2N2218AL JANS2N2219 JANS2N2219A JANS2N2219AL JANS2N2221A JANS2N2221AL JANS2N2484 JANS2N3439UA JANS2N3637 transistors SMD npn JANS2N5339U3 JANS2N7373

    10a 400V ultra fast diode d2pak

    Abstract: IRGS4064DPBF IRGS4064 ultrafast diode 10a 400v igbt 600V
    Text: PD - 96424 IRGS4064DPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C VCES = 600V Features • • • • • • • • • • IC = 10A, TC = 100°C Low VCE on Trench IGBT Technology Low Switching Losses Maximum Junction temperature 175 °C


    Original     		PDF IRGS4064DPbF EIA-418. 10a 400V ultra fast diode d2pak IRGS4064DPBF IRGS4064 ultrafast diode 10a 400v igbt 600V

    Untitled

    Abstract: No abstract text available
    Text: PD - 96424 IRGS4064DPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C VCES = 600V Features • • • • • • • • • • IC = 10A, TC = 100°C Low VCE on Trench IGBT Technology Low Switching Losses Maximum Junction temperature 175 °C


    Original     		PDF IRGS4064DPbF EIA-418.

    diode 10a 400v

    Abstract: ultrafast diode 10a 400v 600v 10A ultra fast recovery diode IRF1010 IRGB4064DPBF
    Text: PD - 97113 IRGB4064DPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C VCES = 600V Features • • • • • • • • • • Low VCE on Trench IGBT Technology Low Switching Losses Maximum Junction temperature 175 °C 5µs SCSOA


    Original     		PDF IRGB4064DPbF O-220AB diode 10a 400v ultrafast diode 10a 400v 600v 10A ultra fast recovery diode IRF1010 IRGB4064DPBF

    IRF1010

    Abstract: ultrafast diode 10a 400v
    Text: PD - 97113 IRGB4064DPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C VCES = 600V Features • • • • • • • • • • Low VCE on Trench IGBT Technology Low Switching Losses Maximum Junction temperature 175 °C 5µs SCSOA


    Original     		PDF IRGB4064DPbF IRF1010 O-220AB IRF1010 ultrafast diode 10a 400v

    Untitled

    Abstract: No abstract text available
    Text: PD - 97113 IRGB4064DPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C VCES = 600V Features • • • • • • • • • • Low VCE on Trench IGBT Technology Low Switching Losses Maximum Junction temperature 175 °C 5µs SCSOA


    Original     		PDF IRGB4064DPbF O-220AB

    diode 10a 400v

    Abstract: 10a 400v bipolar transistor transistor IRF 630 ultrafast diode 10a 400v ultrafast swiching transistor C-150 IRFI840G IRGIB10B60KD1
    Text: PD-94576A IRGIB10B60KD1 INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • Low VCE on Non Punch Through IGBT Technology. • Low Diode VF. • 10µs Short Circuit Capability. • Square RBSOA. • Ultrasoft Diode Reverse Recovery Characteristics.


    Original     		PDF PD-94576A IRGIB10B60KD1 O-220 Param99 IRFI840G O-220 diode 10a 400v 10a 400v bipolar transistor transistor IRF 630 ultrafast diode 10a 400v ultrafast swiching transistor C-150 IRFI840G IRGIB10B60KD1

    TRANSISTOR BIPOLAR 400V 20A

    Abstract: C-150 IRFI840G IRGIB10B60KD1
    Text: PD-94576A IRGIB10B60KD1 INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • Low VCE on Non Punch Through IGBT Technology. • Low Diode VF. • 10µs Short Circuit Capability. • Square RBSOA. • Ultrasoft Diode Reverse Recovery Characteristics.


    Original     		PDF PD-94576A IRGIB10B60KD1 O-220 IRFI840G O-220 TRANSISTOR BIPOLAR 400V 20A C-150 IRFI840G IRGIB10B60KD1

    C-150

    Abstract: IRGIB10B60KD1P
    Text: PD - 94913 IRGIB10B60KD1P INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • Low VCE on Non Punch Through IGBT Technology. • Low Diode VF. • 10µs Short Circuit Capability. • Square RBSOA. • Ultrasoft Diode Reverse Recovery Characteristics.


    Original     		PDF IRGIB10B60KD1P O-220 O-220 C-150 IRGIB10B60KD1P

    C-150

    Abstract: IRGIB10B60KD1P
    Text: PD - 94913 IRGIB10B60KD1P INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • Low VCE on Non Punch Through IGBT Technology. • Low Diode VF. • 10µs Short Circuit Capability. • Square RBSOA. • Ultrasoft Diode Reverse Recovery Characteristics.


    Original     		PDF IRGIB10B60KD1P O-220 O-220 C-150 IRGIB10B60KD1P

    Untitled

    Abstract: No abstract text available
    Text: PD-94576A IRGIB10B60KD1 INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • Low VCE on Non Punch Through IGBT Technology. • Low Diode VF. • 10µs Short Circuit Capability. • Square RBSOA. • Ultrasoft Diode Reverse Recovery Characteristics.


    Original     		PDF PD-94576A IRGIB10B60KD1 O-220 Collector-99 IRFI840G O-220

    C-150

    Abstract: l107mh
    Text: PD - 94913 IRGIB10B60KD1PbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • Low VCE on Non Punch Through IGBT Technology. • Low Diode VF. • 10µs Short Circuit Capability. • Square RBSOA. • Ultrasoft Diode Reverse Recovery Characteristics.


    Original     		PDF IRGIB10B60KD1PbF O-220 O-220 C-150 l107mh

    Untitled

    Abstract: No abstract text available
    Text: PD - 94913 IRGIB10B60KD1P INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • Low VCE on Non Punch Through IGBT Technology. • Low Diode VF. • 10µs Short Circuit Capability. • Square RBSOA. • Ultrasoft Diode Reverse Recovery Characteristics.


    Original     		PDF IRGIB10B60KD1P O-220 O-220

    Untitled

    Abstract: No abstract text available
    Text: PD - 94382B IRGB10B60KD IRGS10B60KD IRGSL10B60KD INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • Low VCE on Non Punch Through IGBT Technology. • Low Diode VF. • 10µs Short Circuit Capability. • Square RBSOA. • Ultrasoft Diode Reverse Recovery Characteristics.


    Original     		PDF 94382B IRGB10B60KD IRGS10B60KD IRGSL10B60KD O-220AB O-262 O-220AB

    AN-994

    Abstract: C-150 IRF530S IRGS10B60KD IRGSL10B60KD IRL3103L
    Text: PD - 94925 IRGB10B60KDPbF IRGS10B60KD IRGSL10B60KD INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • Low VCE on Non Punch Through IGBT Technology. • Low Diode VF. • 10µs Short Circuit Capability. • Square RBSOA. • Ultrasoft Diode Reverse Recovery Characteristics.


    Original     		PDF IRGB10B60KDPbF IRGS10B60KD IRGSL10B60KD O-220AB O-220. AN-994. O-220 AN-994 C-150 IRF530S IRGS10B60KD IRGSL10B60KD IRL3103L

    MC 931 transistor

    Abstract: IGT4E10 250M IGT4D10
    Text: Insulated-Gate Bipolar Transistors IGT4D10, IGT4E10 File Number 2123 N-Channel Enhancement-Mode Conductivity-Modulated Power Field-Effect Transistors TERMINAL DIAGRAM 10A, 400V and 500V rDS on = 0.27 O Features: • Low 1/c e i s a t i — 2.5V type @ 10A


    OCR Scan     		PDF IGT4D10, IGT4E10 IGT4D10 IGT4E10 -60/jsec. MC 931 transistor 250M

    IGT6E10

    Abstract: 6D10 IGT6D10 bipolar transistors Transistor ge 718
    Text: Insulated-Gate Bipolar Transistors - IGT6D10, IGT6E10 F ile N u m b e r 2125 N-Channel Enhancement-Mode Conductivity-Modulated Power Field-Effect Transistors TERM INAL DIAGRAM 10A, 400V and 500V Tds on = 0.27 fi Features: • Lo w I / cecsati — 2.5V typ. @ 10A


    OCR Scan     		PDF IGT6D10, IGT6E10 IGT6D10 IGT6E10 6D10- 6D10 bipolar transistors Transistor ge 718

    GE 639 transistor

    Abstract: IGT6D11 IGT6E11
    Text: Insulated-Gate Bipolar Transistors IGT6D11, IGT6E11 F ile N u m b e r N-Channel Enhancement-Mode Conductivity-Modulated Power Field-Effect Transistors 2126 TER M IN A L DIAGRAM 10A, 400V and 500V Tds on = 0.27 Q Features: • L o w I / c e is a t i — 2.5V typ. @ 10A


    OCR Scan     		PDF IGT6D11, IGT6E11 IGT6D11 IGT6E11 GE 639 transistor

    IGT4E11

    Abstract: IGT4D11 92CS-39928 CIMax
    Text: Insulated-Gate Bipolar Transistors IGT4D11, IGT4E11 F ile N u m b e r N-Channel Enhancement-Mode Conductivity-Modulated Power Field-Effect Transistors 2124 TER M IN A L DIAGRAM 10A, 400V and 500V Tds on = 0.27 f i Features: • L o w 1/ c e i s a t i — 2.5V typ. @ 10A


    OCR Scan     		PDF IGT4D11, IGT4E11 92CS-43I34 IGT4D11 IGT4E11 60iisec, 92CS-39928 CIMax

    igbt 400V 20A

    Abstract: igbt 500V 15A diode 500v 10A diode 10a 400v 20A 500v igbt igbt 1000v 10A igbt 1200V 20A DIODE 20A igbt 400V 5A current sensing 400V
    Text: I- MCT/IGBT/DIODES 3 INSULATED GATE BIPOLAR TRANSISTORS IGBTs PAGE SELECTION G U ID E .


    OCR Scan     		PDF HGTD6N40E1, HGTD6N50E1, HGTD10N40F1, HGTD10N50F1, HGTH12N40C1, HGTM12N40C1, HGTP10N40C1, HGTM12N60D1 HGTP12N60D1 HGTH20N40C1, igbt 400V 20A igbt 500V 15A diode 500v 10A diode 10a 400v 20A 500v igbt igbt 1000v 10A igbt 1200V 20A DIODE 20A igbt 400V 5A current sensing 400V

    TRANSISTOR BIPOLAR 400V 20A

    Abstract: igbt 1000v 10A P-Channel IGBT igbt 500V 15A igbt 40A 600V P-CHANNEL 400V 15A N channel 600v 20a IGBT igbt 400V 40A igbt 400V 20A 400V P-Channel IGBT
    Text: — MCT/IGBT/DIODES 3 INSULATED GATE BIPOLAR TRANSISTORS PAGE SELECTION G U ID E .


    OCR Scan     		PDF HGTD6N40E1, HGTD6N40E1S, HGTD6N50E1, HGTD6N50E1S HGTP6N40E1D, HGTP6N50E1D HGTP10N40C1, HGTH12N40C1, HGTP10N40C1D, HGTP10N40E1D, TRANSISTOR BIPOLAR 400V 20A igbt 1000v 10A P-Channel IGBT igbt 500V 15A igbt 40A 600V P-CHANNEL 400V 15A N channel 600v 20a IGBT igbt 400V 40A igbt 400V 20A 400V P-Channel IGBT

    IRF9210

    Abstract: darlington NPN 600V 8a transistor fet 10a 600v darlington NPN 600V 12a transistor transistor IRF9640 N-CH POWER MOSFET TO-92 600v 12A TO220F NPN Transistor 600V 5A TO-220 transistor irf620 KSH117-1
    Text: PRODUCT INDEX FUNCTIONAL SELECTION GUIDE BIPOLAR TRANSISTOR DESCRIPTION MRTNO. 2N3904 2N3906 2N4401 2N4403 2N5087 2N5088 2N5551 2N6515 KSP06 KSP10 KSP13 KSP2222A KSP27 KSP2907A KSP42 KSP44 KSP56 KSP92 KST10-TF KST2222A-TF KST2484-TF KST2907-TF KST3904-TF KST3906-TF


    OCR Scan     		PDF 2N3904 2N3906 2N4401 2N4403 2N5087 2N5088 2N5551 2N6515 KSP06 KSP10 IRF9210 darlington NPN 600V 8a transistor fet 10a 600v darlington NPN 600V 12a transistor transistor IRF9640 N-CH POWER MOSFET TO-92 600v 12A TO220F NPN Transistor 600V 5A TO-220 transistor irf620 KSH117-1