10N100D
Abstract: DSA003705
Text: Advance Technical Information High Voltage MOSFET N-Channel, Depletion Mode VDSS = 1000 V = 10 A ID25 RDS on = 1.4 Ω IXTH 10N100D IXTT 10N100D TO-247 (IXTH) Symbol Test Conditions Maximum Ratings VDSX TJ = 25°C to 150°C 1000 V VDGX TJ = 25°C to 150°C
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10N100D
10N100D
O-247
O-247
O-268
O-268
DSA003705
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10N100
Abstract: No abstract text available
Text: Advanced Technical Information HiPerFETTM Power MOSFETs IXFR 12N100Q ISOPLUS247TM Q CLASS VDSS ID25 1000 V 10 A IXFR 10N100Q 1000 V 9A Electrically Isolated Back Surface trr £ 200 ns RDS(on) 1.05 W 1.20 W N-Channel Enhancement Mode Avalanche Rated, High dV/dt
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12N100Q
ISOPLUS247TM
10N100Q
12N100
10N104
IXFR10N100
IXFR12N100
10N100
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Untitled
Abstract: No abstract text available
Text: HiPerFETTM Power MOSFETs IXFR ISOPLUS247TM Q CLASS VDSS ID25 RDS on 12N100Q 1000 V 10 A IXFR 10N100Q 1000 V 9A (Electrically Isolated Back Surface) trr ≤ 300 µs 1.1 Ω 1.20 Ω N-Channel Enhancement Mode Avalanche Rated, High dV/dt Low Gate Charge and Capacitances
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ISOPLUS247TM
12N100Q
10N100Q
12N100S
IXFR10N100
IXFR12N100
IXFH12N100Q
728B1
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IXFH12N100Q
Abstract: 10N100 6a diode 12N100Q IXFR12N100
Text: HiPerFETTM Power MOSFETs IXFR ISOPLUS247TM Q CLASS VDSS ID25 RDS on 12N100Q 1000 V 10 A IXFR 10N100Q 1000 V 9A (Electrically Isolated Back Surface) trr ≤ 300 µs 1.1 Ω 1.20 Ω N-Channel Enhancement Mode Avalanche Rated, High dV/dt Low Gate Charge and Capacitances
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ISOPLUS247TM
12N100Q
10N100Q
12N100
10N100
10N1IS
IXFR10N100
IXFH12N100Q
10N100
6a diode
IXFR12N100
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13N100
Abstract: 10N100 13n10
Text: HiPerFETTM Power MOSFETs VDSS IXFH / IXFM 10N100 IXFH / IXFM 12N100 IXFH 13N100 N-Channel Enhancement Mode High dv/dt, Low trr, HDMOSTM Family Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ VGS VGSM
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10N100
12N100
13N100
13N100
10N100
13n10
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10N100F
Abstract: 10n100 98934
Text: VDSS HiPerFETTM Power MOSFETs IXFR ISOPLUS247TM ID25 RDS on 12N100F 1000 V 10 A IXFR 10N100F 1000 V 9A F-Class: MegaHertz Switching trr ≤ 250 ns (Electrically Isolated Back Surface) 1.05 Ω 1.20 Ω N-Channel Enhancement Mode Avalanche Rated, High dV/dt
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ISOPLUS247TM
12N100F
10N100F
IXFR10N100
IXFR12N100
728B1
10n100
98934
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Untitled
Abstract: No abstract text available
Text: MegaMOSTMFET IXTH / IXTM 10N100 IXTH / IXTM 12N100 VDSS ID25 RDS on 1000 V 1000 V 10 A 12 A 1.20 Ω 1.05 Ω N-Channel Enhancement Mode Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 1000 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ 1000 V
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10N100
12N100
O-247
O-204
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10N100
Abstract: transistor ixth 12N100 N100 transistor N100
Text: MegaMOSTMFET IXTH / IXTM 10N100 IXTH / IXTM 12N100 VDSS ID25 RDS on 1000 V 1000 V 10 A 12 A 1.20 Ω 1.05 Ω N-Channel Enhancement Mode Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 1000 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ 1000 V
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10N100
12N100
O-247
O-204
10N100
transistor ixth 12N100
N100 transistor
N100
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Untitled
Abstract: No abstract text available
Text: Advanced Technical Information HiPerFETTM Power MOSFETs IXFR 12N100Q ISOPLUS247TM Q CLASS VDSS ID25 1000 V 10 A IXFR 10N100Q 1000 V 9A Electrically Isolated Back Surface trr £ 200 ns RDS(on) 1.05 W 1.20 W N-Channel Enhancement Mode Avalanche Rated, High dV/dt
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12N100Q
ISOPLUS247TM
10N100Q
12N100
10N100
10N100
IXFR10N100
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10N100
Abstract: 12n100 D-68623 IXYS SEMICONDUCTOR IXYS 120
Text: IXFH 10N100 IXFH 12N100 VDSS HiPerFETTM Power MOSFETs IXFM 10N100 IXFM 12N100 ID25 IXFH/FM 10N100 1000 V 10 A IXFH/FM 12N100 1000 V 12 A RDS on trr 1.20 Ω 1.05 Ω 250 ns 250 ns N-Channel Enhancement Mode High dv/dt, Low trr, HDMOSTM Family TO-247 AD (IXFH)
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10N100
12N100
10N100
12N100
O-247
D-68623
IXYS SEMICONDUCTOR
IXYS 120
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10N100
Abstract: 12n100 N100
Text: HiPerFETTM Power MOSFETs VDSS IXFH/IXFM 10 N100 IXFH/IXFM 12 N100 1000 V 1000 V Symbol Test Conditions Maximum Ratings VDSS T J = 25°C to 150°C 1000 V VDGR T J = 25°C to 150°C; RGS = 1 MΩ 1000 V VGS Continuous ±20 V VGSM Transient ±30 V ID25 T C = 25°C
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10N100
12N100
10N100
12n100
N100
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10N100
Abstract: N100 12n100 TO204AA
Text: VDSS MegaMOSTMFET ID25 RDS on 1000 V 10 A 1.20 Ω 1000 V 12 A 1.05 Ω IXTH/IXTM 10 N100 IXTH/IXTM 12 N100 N-Channel Enhancement Mode Symbol Test Conditions Maximum Ratings VDSS T J = 25°C to 150°C 1000 V VDGR T J = 25°C to 150°C; RGS = 1 MΩ 1000 V
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10N100
12N100
O-247
O-204
10N100
N100
12n100
TO204AA
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10N100
Abstract: No abstract text available
Text: HiPerFETTM Power MOSFETs VDSS N-Channel Enhancement Mode High dv/dt, Low trr, HDMOSTM Family IXFT 10 N100 IXFT12 N100 IXFT 13 N100 ID25 1000 V 10 A 1000 V 12 A 1000 V 12.5 A trr £ 250 ns RDS on 1.20 W 1.05 W 0.90 W Preliminary data sheet Symbol Test Conditions
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IXFT12
10N100
12N100
13N100
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10N100
Abstract: No abstract text available
Text: VDSS HiPerFETTM Power MOSFETs IXFH/IXFM 10 N100 IXFH/IXFM 12 N100 N-Channel Enhancement Mode High dv/dt, Low trr, HDMOSTM Family Symbol Test Conditions VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ VGS VGSM Continuous Transient ID25 TC = 25°C
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10N100
12N100
728B1
123B1
728B1
065B1
10N100
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SBSGP
Abstract: 1nF CAPACITOR 250v ac smd y class capacitor 1nf 500v 1812 x7r varistor en132400 sbsmp m1043 IEC60384-14 metal oxide varistor EN132400 smd y2 safety capacitor PI FILTER 5A 100V 150NF
Text: Syfer Technology is a leader in specialist multilayer ceramic chip capacitors and EMI filters First in the market with flexible polymer terminations - the revolutionary FlexiCapTM capacitors - our capacitor range also includes X8R high temperature types, Tip & Ring/Ring Detect and other application specific
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ultr993
R60006629
R60007460
R60010910
SBSGP
1nF CAPACITOR 250v ac smd y class
capacitor 1nf 500v 1812 x7r
varistor en132400
sbsmp
m1043
IEC60384-14
metal oxide varistor EN132400
smd y2 safety capacitor
PI FILTER 5A 100V 150NF
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Untitled
Abstract: No abstract text available
Text: □IXYS Advanced Technical Information HiPerFET Power MOSFETs ISOPLUS247™ Q CLASS ix f r DSS D 25 10 A 12N100Q 1000 V IXFR 10N100Q 1000 V 9A Electrically Isolated Back Surface t rr < 200 ns D S (on) 1.05 Q 1.20 Q N-Channel Enhancement Mode Avalanche Rated, HighdV/dt
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ISOPLUS247â
12N100Q
10N100Q
12N100
10N100
IXFR10N100
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ixgh 1500
Abstract: 40N60A 25N120 200n60 60n60 igbt smd 30n60 10N60A 30N60A .25N100 20n60a
Text: Insulated Gate Bipolar Transistors IGBT G series with high gain V•CSS : ■■ Type . TJm = 15° CC > New ► IXGA IXGH IXGH IXGH IXGH IXGH IXGH IXGH 10N60 10N60 20N60 31N60 30N60 38N60 40N60 60N60 IXGH 10N100 >■ IXGA 12N100 > IXGH 12N100 > ► >•
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10N60
20N60
31N60
30N60
38N60
40N60
60N60
32N60BS
40N60A
ixgh 1500
25N120
200n60
60n60 igbt smd
10N60A
30N60A
.25N100
20n60a
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Untitled
Abstract: No abstract text available
Text: □IXYS IXFH 10N100 IXFH 12N100 HiPerFET Power MOSFETs IXFH/FM 10N 100 IXFH/FM 12N100 IXFM 10N100 IXFM 12N100 ^DSS 1000 V 1000 V ^D25 10 A 12 A D DS on 1.20 a 1.05 a K 250 ns 250 ns N-Channel Enhancement Mode High dv/dt, Low t , HDMOS™ Family Symbol
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10N100
12N100
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10N100E
Abstract: No abstract text available
Text: MOTOROLA O rder this docum ent by M TW 10N100E/D SEMICONDUCTOR TECHNICAL DATA D esigner’s Data Sheet M TW 10N 100E TMOS E-FET ™ Power Field Effect Transistor T O -2 4 7 w ith Isolated Mounting Hole Motorola Preferred Device TMOS POWER FET 10 AMPERES
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10N100E/D
340K-01
10N100E
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ixth12n100
Abstract: 12n100 3055P
Text: n ix Y S MegaMOS FET IXTH / IXTM 10N100 IXTH / IXTM 12N100 VDSS ^D25 1000 V 1000 V 10 A 12 A p DS on 1.20 Q 1.05 Q N-Channel Enhancement Mode Symbol Test Conditions Maximum Ratings V DSS T0 =25°Cto150°C 1000 V VDGR Tj = 25° C to 150° C; RGS= 1 Mi2 1000
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10N100
12N100
Cto150
O-247AD
O-204
O-204
ixth12n100
3055P
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Untitled
Abstract: No abstract text available
Text: □ IXYS Low VCE sal IGBT with Diode High speed IGBT with Diode IXGH 10 N100U1 IXGH 10 N100AU1 V CES ^C25 V CE(sat) 1000 V 1000 V 20 A 20 A 3.5 V 4.0 V Combi Packs Symbol Test Conditions vw CES T, = 25°C to 150°C 1000 V V CGR Tj = 25°C to 150°C; RaE = 1 M£2
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N100U1
N100AU1
O-247
10N100U1
10N100AU1
4bflb22b
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10N100
Abstract: No abstract text available
Text: DIXYS Low VCE 6al IGBT High speed IGBT 10N100 10N100A V y c es ^C25 v CE (sat) 1000 V 1000 V 20 A 20 A 3.5 V 4.0 V Ae Sym bol Test Conditions Maximum Ratings V ces T, = 25“C t o 150°C 1000 V co„ ^ = 25“C to 150“C; RaE = 1 M£2 1000 V VGEs
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IXGH10N100
IXGH10N100A
O-247
10N100A
10N100A
10N100
10N100U1
10N100AU1
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EATON CM20A
Abstract: A5 GNE mosfet Hall sensor 44e 402 2N8491 FTG 1087 S TRIAC BCR 10km FEB3T smd transistor marking 352a sharp EIA 577 sharp color tv schematic diagram MP-130 M mh-ce 10268
Text: Table of Contents N E W A R K E L E C T R O N IC S “Where serving you begins even before you call” Newark Electronics is a UNIQUE broadline distributor of electronic components, dedicated to provid ing complete service, fast delivery and in-depth inventory. Our main
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6N60E
Abstract: 10N100E 14n50e MOSFET 20n50e 8n50e 35N15E 32N20E 20N50E 6N100E 16N40E
Text: ir TMOS TM OS Power MOSFETs Plastic Packages — TO-247 TO-247 CASE 340F-03 MTW PREFIX — Isolateci TO-218 Table 4 — N-Channel TO-247 VDss (Volts) Min RDS(on) I d (Ohms) (Amps) Max Device 1000 800 600 2 3 M TW 6N100E Table 5 — N- and P-Channel Isolated TO-218
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O-247
O-218
340F-03
340B-03
O-247
6N100E
10N100E
6N60E
14n50e
MOSFET 20n50e
8n50e
35N15E
32N20E
20N50E
16N40E
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