Untitled
Abstract: No abstract text available
Text: SIEMENS AKTIENGESELLSCHAF LOE ]> • 023SbOS G D S m ? S M7D I1SIE6 SIEMENS Transistoren Transistors AIGaAs/GaAs HEMTs AIGaAs/GaAs HEMTs Characteristics TA = 25° C Maximum Ratings E mW 9m mS 70 180 40 ¿> P o Type 70 180 40 -3.0.0 60 180 50 70 200 40
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023SbOS
CGY50
OT-143
CGY40
CLY10
CGY52
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transistor Siemens 14 S S 92
Abstract: transistor 115 47e
Text: I 023SbOS 0020014 3 El SIEG SIEMENS AKTIENGESELLSCHAF 47E » T-21-Z5 BS 107 SIPMOS Small-Signal Transistor Vos /„ = 200 V =0.13 A flbs o n = 26 Q • N channel • Enhancement mode • Package: TO-92') "type Ordering code for version on tape Ordering code
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023SbOS
T-21-Z5
Q67000-S078
Q67000-S060
chap60
235b05
transistor Siemens 14 S S 92
transistor 115 47e
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SBV566
Abstract: hall generator K2488 Hall Siemens sbv 566 siemens hall ferrite P Ferrite Siemens Siemens Hall siemens hall generator
Text: D • 023SbOS Q01L373 1 ISIE6 Ferrite Mounted Hall Generator SBV 566 SIEMENS AKTIEN6ESELLSCHAF - Features _LL • Compact size • High sensitivity J= = Q □2.WW»7.S- Typical ap p licatio n s • Current sensing • Position sensing - 12.1
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023SbOS
Q01L373
20Rem
SBV566
hall generator
K2488
Hall Siemens
sbv 566
siemens hall ferrite
P Ferrite Siemens
Siemens Hall
siemens hall generator
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BC 179
Abstract: transistor af 178 BC179 BC178B Q62702-C685 TI-5045 BC179E C154 TRANSISTOR BC 177 transistor
Text: 2SC ì> • 023SbOS O D Q m iS 7 H S I E 6 ¿pc xj*tLL^ —- jO D '*y* <Ky PNP Silicon Transistors * " BC 177 -S IE M E N S AKTIENGESELLSCHAF -BC179 BC 177, BC 178, and BC 179 are epitaxial PNP silicon planar transistors in TO 18 case
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023SbOS
--------------------------------BC179
62702-C
Q62702-C141
62702-C142
Q62702-C685
62702-C153
62702-C154
62702-C686
BC 179
transistor af 178
BC179
BC178B
TI-5045
BC179E
C154 TRANSISTOR
BC 177 transistor
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TMT Isolator
Abstract: BR306 dioda switching photo transistor til 78 SFH609 F4183
Text: SIEMENS AKTIENGESELLSCHAF M7E D • 023SbOS D D 2 7 2 m S ■ SIEG 1=41-83 SIEMENS SFH609 SERIES HIGH RELIABILITY PHOTOTRANSISTOR OPTOCOUPLER Package D im ensions in Inches m m 307(7 6) .291 {7 4) 35616 Sì 248(6 3) E Œ E 3 3 3 ANOCE [T k CATHODE [ Ï NCH
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fi23SbDS
D027214
F41-83
SFH609
Vceo90V
E52744
TMT Isolator
BR306
dioda switching
photo transistor til 78
F4183
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SFH401-2
Abstract: SFH401-4 sfh 910 2SC300 SFH401-3 SFH401 T018 marking s15 diode 0DE7371 sfh4012
Text: SIEMENS AKTIENGESELLSCHAF 47E D • 023SbOS S IE M E N S DDE7371 ñ «ISIE6 SFH 401 SERIES GaAs INFRARED EMITTER -r-m-u Package Dimensions in Inches mm *“ .117(4 75) .181 (4.6) ~\ 1 - f i) A S .A ^ / 0.10 (254) t 216(5.» ¿11 (5.35) Cathode FEATURES Maximum Ratings
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235bOS
0DE7371
SFH401
SFH401-2
SFH401-4
sfh 910
2SC300
SFH401-3
SFH401
T018
marking s15 diode
sfh4012
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DIN 50014 STANDARD
Abstract: C67078-A1610-A2 DIN 50014 BUZ67 BV EI 301 siemens T bv
Text: ÔÔD D • 88D 023SbOS 0014714 2 « S I E G 14714 D 'T~''37~J3 BUZ67 ^SIEMENS AKTIEN6ESELLSCHAF_ Main ratings N-Channel Drain-source voltage Continuous drain current Draln-source on-reslstance Description Case - 400 V = 9,6 A h ^DS OH = 0,4 S i
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23sb0s
00147m
BUZ67
SBUZ67
C67078-A1610-A2
fl235bG5
00147n
DIN 50014 STANDARD
C67078-A1610-A2
DIN 50014
BUZ67
BV EI 301
siemens T bv
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Untitled
Abstract: No abstract text available
Text: bOE D • 023SbOS D04bSSE 4D5 m s i E G SIEMENS SFH 4212 IRED T 0 1 8 PACKAGE rillc SIEMENS AKTIENGESELLSCHAF P a cka g e D im e n sio n s in mm FEATURES M a xim u m R atings * In G a A s P /ln P -IR E D 60 mA Forward Current DC lF .
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023SbOS
D04bSSE
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Untitled
Abstract: No abstract text available
Text: bOE ]> m 023SbOS 004b221 CHb • SIEÛ SIEMENS LB 5410-HO Blue TVA 5 mm LED Lamp SIEMENS AKTIENGESELLSCHAF LED Lamps Package Dimensions in inches (mm) Maximum Ratings FEATURES • Pure Blue Light (480 nm) • Clear T r /* (5 mm) Plastic Package • 1" Minimum Lead Length
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023SbOS
004b221
5410-HO
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S498
Abstract: BSS97 BSS95 BSS125 siemens 230 92 BSS 130 BSS 97 s484 S458 BSS components
Text: <IENENS AKTIEN6ESELLSCHAF 03E D • 023SbOS 001Sb37 4 BISIE6 T^£7~2S' Kleinsignaltransistoren Small-Signal Transistors N-Kanal Anreicherungstypen N channel enhancem ent types K S max) V ti(max) rriA ft P,ot mW G ehäuse P ackage SBS SCS Bestellnummer Ordering co d e
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023SbOS
lSb37
Q62702-
BSS981'
BSS1381Â
OT-23
BSS3951Â
O-202
BSS100
BSS123
S498
BSS97
BSS95
BSS125
siemens 230 92
BSS 130
BSS 97
s484
S458
BSS components
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Hall Siemens sbv 525
Abstract: K2487 Hall Siemens hall generator siemens hall generator siemens hall probe siemens sbv
Text: 2^ T> • 023SbOS Q01b3?l ô H S I E 6 Field Probe for Measurements in Small Gaps S B V 525 SIEMENS AKTIENGESELLSCHAF - The S B V 525 is a hall generator of InAs semiconductor material designed for measuring magnetic fields in small gaps. S B V 5 25
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023SbOS
Q01b3
4099-V
TCV20
Hall Siemens sbv 525
K2487
Hall Siemens
hall generator
siemens hall generator
siemens hall probe
siemens sbv
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BD 862
Abstract: No abstract text available
Text: " 2SC D • 023SbOS 0004417 1 « S I E 6 r T-33“31. PNP Silicon Darlington Transistors j BD 862 BD 864 SIEMENS AKTIENGESELLSCHAF ° 80866 E p ib ase p o w e r d a rlin g to n tra n sisto rs 15 W BD 862, BD 864, and BD 866 are monolithic silicon PN P epibase power darlington transistors
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023SbOS
F--03
DQG4420
BD 862
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DIODE 3LU
Abstract: D959 Q62702-D961 Q62702-D959 3lu diode BD 862 Diode 864
Text: " 2SC D • 023SbOS 0004417 1mSIEG r T-33“31. ; PNP Silicon Darlington Transistors SIEMENS Epibase BD 862 AKTIENGESELLSCHAF ° - ! p o w e r d arlin g to n transistors 1 5 W | BD 8 6 2 , BD 8 6 4 , and BD 8 6 6 are monolithic silicon PNP epibase power darlington transistors
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023SbOS
-50V-
Tmm1S25Â
DQG4420
DIODE 3LU
D959
Q62702-D961
Q62702-D959
3lu diode
BD 862
Diode 864
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101F
Abstract: ACY23 ACY23V ACY32 ACY32V Q60103-Y23-E Q60103-Y23-F Q60103-Y32-E Q60103-Y32-F Q62901-B1
Text: 2SC D • 023SbOS 0004041 4 PNP Transistors for AF Input Stages SIEMENS AKTIENGESELLSCHAF ISIE6 1 5C 04041 D ACY23 ACY32 ACY 23 and ACY 32 are alloyed germanium PNP transistors in 1 A 3 DIN 41871 case similar to T0-1 . All leads are electrically insulated from the case. The collector terminal
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00QMQ41
ACY23
ACY32
Q60103-Y23-E
Q60103-Y23-F
Q60103-Y32-E
Q60103-Y32-F
Q62901-B1
fl23SbQS
000404b
101F
ACY23V
ACY32V
Q62901-B1
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k 942
Abstract: K942 N 2904 ic 2904 N2905 2904 d 2905 2N2904 2N2904A Q62702-F65
Text: 2SC ]> • 023SbOS 00040=52 'î H S I E 6 ‘ *7_ / " i/ * / 7 PNP Silicon Planar Transistors 2 N 2904 2 N 2905 - SIEMENS AKTIENGESELLSCHAF -2 N 2904 and 2 N 2905 are epitaxial PNP silicon planar transistors in TO 39 case 5 C 3 DIN 41873 . The collector is electrically connected to the case. The transistors are
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Q62702-F65
Q62702-F66
C-30V
103mA
lfE-20
053SbOS
-2N2904A
k 942
K942
N 2904
ic 2904
N2905
2904 d
2905
2N2904
2N2904A
Q62702-F65
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BC 148 transistor
Abstract: transistor BC 147 NPN transistor bc 148 bc 147 transistor of transistor bc 148 bc 148 npn transistor S1000 Siemens 8C121 transistor bc 148 bc 149 transistor
Text: .25C D • MSIEG ■ _ 023SbOS GQGMCH? *? W ~/l NPN Silicon Transistors SIEMENS AKTIENGESELLSCHAF C121 i B C 122 ! - B C 123 Î BC 121, BC 122, and BC 123 are miniature epitaxial NPN silicon planar transistors in U 32
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023SbOS
BC1211)
BC-121
Q60203-Q60203-Q60203-Q60203-Q60203-Q60203
Q60203-Q60203
Q60203
bc121.
bc122,
bc123
BC 148 transistor
transistor BC 147
NPN transistor bc 148
bc 147 transistor
of transistor bc 148
bc 148 npn transistor
S1000 Siemens
8C121
transistor bc 148
bc 149 transistor
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1072B
Abstract: 1072
Text: -L¡\ SIEMENS AKTIEN6ESELLSCHAF 47E D • 023SbOS 0027=107 1 « S I E G B 1060 Features: • TO metal-glass housing • type 60 material • high permissible power dissipation Application: • automatic street lamp switching • burner controls B 1072 Features:
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023SbOS
1072B
1072
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ic 2904
Abstract: N2905
Text: 2SC T> m 023SbOS 00040=52 'î « S I E G “ _ / ~ + 7 *'/7 2 N 2904 2 N 2905 PNP Silicon Planar Transistors - SIEMENS AKTIENGESELLSCHAF - 2 N 2 9 0 4 and 2 N 2 9 0 5 are epitaxial PNP silicon planar transistors in TO 39 case 5 C 3 DIN 41 8 7 3 . The collector is electrically connected to the case. The transistors are
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023SbOS
ic 2904
N2905
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AF4505
Abstract: transistor BF 502 Q U 31U transistor s250
Text: ESC D • 023SbOS ÛQQ45GS T BISIEG ; 7^-5/' 2 / NPN Silicon RF Transistor SIEMENS BF502 A K T I E N G E S E L L S C H A F >4505 0 - | BF 5 0 2 is an NPN silicon planar RF transistor in TO 9 2 plastic package 1 0 A 3 D I N 4 1 86 8 .
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023SbOS
QQ45GS
BF502
AF4505
transistor BF 502
Q U 31U
transistor s250
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Germanium power
Abstract: gpb19
Text: 2SC D Bi 023SbOS DÜQ4QÖ3 ^ M S I Z G PNP Germanium UHF Transistor A F2 8 9 _ SIEMENS AKTIENGESELLSCHAF - ~ f-3 l-D 7 AF 2 8 9 is a germanium PNP UHF Planartransistor with passivated surface in low-capacitance 5 0 B 3 DIN 4 1 8 6 7 plastic package similar to T 0 119. This transistor is particularly intended
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023SbOS
Germanium power
gpb19
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smd transistor WF
Abstract: transistor smd wf TRANSISTOR SMD a43 SMD transistor JD va5 smd 4E smd diode transistor t5c smd t5c
Text: SIEMENS A K T I EN G E S E LL S C H AF 4?E D • 023SbOS S IE M E N S QD27317 2 *SIE6 SFH6106 2.8 kV TRIOS* OPTOCOUPLERS HIGH RELIABILITY Package Dimensions mm D E S C R IP T IO N * Isolation Test Voltage: 2800 V * High Current Transfer Ratios at 10 mA: 40-320%
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GGP7317
35max-
smd transistor WF
transistor smd wf
TRANSISTOR SMD a43
SMD transistor JD
va5 smd
4E smd diode
transistor t5c
smd t5c
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transistor k 975
Abstract: c 879 transistor afe 1000 BD880 darlington bd 876 BD876 d966 transistor bd 975 transistor BD878 BD 875
Text: 2SC » • 023SbOS 0QGH421 3 ■ S I E 6 - ' NPN Silicon Planar Darlington Transistors SIEMENS AKTIEN6ESELLSCHAF 21 T-33-29 BD 875 BD 877 BD 879 ° BD 875, BD 877, and BD 879 are epitaxial NPN silicon planar darlington transistors in TO 126 plastic package 12 A 3 DIN 41869, sheet 4 . These darlington transistors
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023SbOS
T-33-29
Q62702-D902
Q62702-D903
Q62702-D904
Q62902-B63
Q62902-B62
25imi
BD977
transistor k 975
c 879 transistor
afe 1000
BD880
darlington bd 876
BD876
d966 transistor
bd 975 transistor
BD878
BD 875
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Untitled
Abstract: No abstract text available
Text: 47E D • 023SbOS □G3425'ì 7 ■ S I E G SIEM ENS SIEMENS AKTIENGESELLSCHAF 'T - '- n - t n - c n 5 V-Modulator TDA 5664 Preliminary Data Bipolar 1C Function Monolitic integrated circuit for use as a modulator in the 30 to 860 MHz range. Application Video recorders, cable converters, cable TV head stations,
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023SbOS
G3425'
fl53StiDS
DD3424S
flS3Sb05
00345Mb
B535b05
11MHz
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Untitled
Abstract: No abstract text available
Text: - 1 ! 2SC » • 023SbOS 0004701 I H S I E 6 u‘ NPN Silicon RF Broadband Transistor SIEMENS AKTIENfiESELLSCHAF . D T~3/~13 BFT 12 —1 BFT 12 is an epitaxial NPN silicon planar RF transistor in a plastic package similar to
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023SbOS
Q62702-F390
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